Growth and Some Properties of Nd:LuVO4 Crystal

赵守仁,张怀金,胡小波,孔海宽,刘均海,徐现刚,王继扬,蒋民华

DOI: https://doi.org/10.3969/j.issn.1000-985X.2004.03.020

2004-01-01

Abstract:Nd:LuVO_4 single crystal was grown by Czochralski method. Polycrystalline Nd:LuVO_4 starting material was prepared by the solution reactions of NH_4VO_3 with either Nd(NO_3)_3 or Lu(NO_3)_3, which were obtained from respective oxide reacted with NH_4OH or HNO_3. The as-grown Nd_(0.01)Lu_(0.99)VO_4 single crystal sized 16×20×21 mm~3 weighted more than 40g. The effective segregation coefficients were measured to be (0.91) for Nd~(3+) and near 1 for V~(3+) and Lu~(3+) during crystal growth by means of X-ray fluorescence. The dielectric constants e_(33) and e_(11) were determined to be 27.2 and 33.9 (30℃,1kHz) respectively. The crystal quality was observed with synchrotron white beam X-ray topography.