Abstract:In this work, Ar mixed 5% H2 plasma was applied to improve the surface properties of electroplated Cu and electroplated Sn for Cu/Sn/Cu solid-state-diffusion (SSD) bonding in 3D interconnection. The surfaces of electroplated Cu and electroplated Sn were easily covered with a thin oxide layer which would reduce the surface activity and degenerate the bonding performance. With an optimal pretreatment time of 120s, the contact angle of electroplated Cu decreased from 29°C to below 10°C. However, the optimal pretreatment time was only 60s for contact angle of electroplated Sn with a reduction from 36°C to below 5°C. The average roughness of electroplated Cu and electroplated Sn was also reduced to 6.8nm and 78.0nm respectively. And the electroplated Cu and electroplated Sn could keep a more stable surface activity after storage in clean room for 30min and 60min. Subsequently, a sandwich-structure Cu/Sn/Cu interconnection with a pitch of 20µm was realized at 200°C in wafer level using solid-state-diffusion (SSD) bonding. The as-bonded interface consisted of Cu/Cu3Sn/Cu6Sn5/Cu3Sn/Cu, without pure Sn remained and Sn overflow. The interface transformed to Cu/Cu3Sn/Cu as exhausting Cu6Sn5 after an annealing process. Higher shear strength and lower daisy-chain resistant were also obtained. And the bonding properties also degenerated less after high temperature storage (HTS) test. It is concluded that the optimal Ar(5%H2) plasma pretreatment could effectively activate the surface of bump and improve Cu/Sn/Cu SSD bonding for future's 3D interconnection.

Activation of Electroplated-Cu Surface Via Plasma Pretreatment for Low Temperature Cu-Sn Bonding in 3d Interconnection

Study on Ar(5%H-2) Plasma Pretreatment for Cu/Sn/Cu Solid-State-Diffusion Bonding in 3d Interconnection

Plasma Combined Self-Assembled Monolayer Pretreatment on Electroplated-Cu Surface for Low Temperature Cu–Sn Bonding in 3D Integration

The Investigation of Ar Plasma Treatment on the Contact Resistance Between Metal-Metal by a Simple Metal Bonding Simulation Approach

Low temperature Cu/SiO 2 hybrid bonding via 〈1 1 1〉-oriented nanotwinned Cu with Ar plasma surface modification

Plasma surface pretreatment to improve interfacial adhesion strengths of sputtered Cu on polyimide film

Low-Temperature Plasma Treatment of Aluminum for Improved Surface Bonding

Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

Enhanced Cu-Cu bonding for ultrahigh-density interconnection: Co passivation bonding with non-oxidation interfaces

Interfacial Characterization of Low-Temperature Cu-to-Cu Direct Bonding with Chemical Mechanical Planarized Nanotwinned Cu Films

Cu-Cu Bonding By Ag Nanostructure At Low Temperature Of 180 Degrees C

Experimental and computational investigation of low temperature Cu-Sn solid-state-diffusion bonding for 3D integration

Two-Step Ar/N 2 Plasma Treatment on SiO 2 Surface for Cu/SiO 2 Hybrid Bonding

Low-temperature Cu/SiO 2 hybrid bonding based on Ar/H 2 plasma and citric acid cooperative activation for multi-functional chip integration

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Cu-Cu bonding by Ag nanostructure at low temperature of 180 °C

Enhanced Reactivity of Electroless Cu Interconnection by Surface Oxidation Pretreatment

Investigation of Low-Pressure Sn-Passivated Cu-to-Cu Direct Bonding in 3D-Integration

Thermal-stable Void-Free Interface Morphology and Bonding Mechanism of Low-Temperature Cu-Cu Bonding Using Ag Nanostructure As Intermediate

Modified Pulse Laser Deposition of Ag Nanostructure As Intermediate for Low Temperature Cu-Cu Bonding

Low Contact Resistance Copper-Copper Bonding with Selective Electroless Plating Cobalt Interlayer