A Low Power CMOS VCO Using Inductive-Biasing with High Performance FoM

Liu Weihao,Huang Lu
DOI: https://doi.org/10.1088/1674-4926/37/4/045001
2016-01-01
Journal of Semiconductors
Abstract:A novel voltage-controlled oscillator (VCO) topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using time-varying phase noise theory derives closed-form symbolic formulas for the 1/f(2) phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 mu m CMOS technology. Working under a 0.3 V supply voltage with 1.2 mW power consumption, the measured phase noise of the VCO is -119.4 dBc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an FoM of 192.5 dBc/Hz.
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