High Brightness Formamidinium Lead Bromide Perovskite Nanocrystal Light Emitting Devices.
Ajay Perumal,Sushant Shendre,Mingjie Li,Yong Kang Eugene Tay,Vijay Kumar Sharma,Shi Chen,Zhanhua Wei,Qing Liu,Yuan Gao,Pio John S. Buenconsejo,Swee Tiam Tan,Chee Lip Gan,Qihua Xiong,Tze Chien Sum,Hilmi Volkan Demir
DOI: https://doi.org/10.1038/srep36733
IF: 4.6
2016-01-01
Scientific Reports
Abstract:Formamidinium lead halide (FAPbX3) has attracted greater attention and is more prominent recently in photovoltaic devices due to its broad absorption and higher thermal stability in comparison to more popular methylammonium lead halide MAPbX3. Herein, a simple and highly reproducible room temperature synthesis of device grade high quality formamidinium lead bromide CH(NH2)2PbBr3 (FAPbBr3) colloidal nanocrystals (NC) having high photoluminescence quantum efficiency (PLQE) of 55–65% is reported. In addition, we demonstrate high brightness perovskite light emitting device (Pe-LED) with these FAPbBr3 perovskite NC thin film using 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) commonly known as TPBi and 4,6-Bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine (B3PYMPM) as electron transport layers (ETL). The Pe-LED device with B3PYMPM as ETL has bright electroluminescence of up to 2714 cd/m2, while the Pe-LED device with TPBi as ETL has higher peak luminous efficiency of 6.4 cd/A and peak luminous power efficiency of 5.7 lm/W. To our knowledge this is the first report on high brightness light emitting device based on CH(NH2)2PbBr3 widely known as FAPbBr3 nanocrystals in literature.