ARPES Study of the Epitaxially Grown Topological Crystalline Insulator SnTe(111)
Yi Zhang,Zhongkai Liu,Bo Zhou,Yeongkwan Kim,Lexian Yang,Hyejin Ryu,Choongyu Hwang,Yulin Chen,Zahid Hussain,Zhi-Xun Shen,Sung-Kwan Mo
DOI: https://doi.org/10.1016/j.elspec.2016.10.003
IF: 1.993
2016-01-01
Journal of Electron Spectroscopy and Related Phenomena
Abstract:SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular tothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar and M_bar points of the surface Brillouinzone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone,whose Dirac energy is largely different from those at the Gamma_bar and M_bar points.