Abstract:Developing approaches to effectively induce and control the magnetic states is critical to the use of magnetic nanostructures in quantum information devices but is still challenging. Here we have demonstrated, by employing the density functional theory calculations, the existence of infinite magnetic sheets with structural integrity and magnetic homogeneity. Examination of a series of transition metal dichalcogenides shows that the biaxial tensile strained NbS(2) and NbSe(2) structures can be magnetized with a ferromagnetic character due to the competitive effects of through-bond interaction and through-space interaction. The estimated Curie temperatures (387 and 542 K under the 10% strain for NbS(2) and NbSe(2) structures, respectively) suggest that the unique ferromagnetic character can be achieved above room temperature. The self-exchange of population between 4d orbitals of the Nb atom that leads to exchange splitting is the mechanism behind the transition of the spin moment. The induced magnetic moments can be significantly enhanced by the tensile strain, even giving rise to a half-metallic character with a strong spin polarization around the Fermi level. Given the recent progress in achieving the desired strain on two-dimensional nanostructures, such as graphene and a BN layer, in a controlled way, we believe that our calculated results are suitable for experimental verification and implementation, opening a new path to explore the spintronics in pristine two-dimensional nanostructures.

Strain Modulating Half-Metallicity of Semifluorinated Gan Nanosheets

Strain-induced Magnetic Transitions in Half-Fluorinated Single Layers of BN, GaN and Graphene.

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Strain-Induced Half-Metallicity of Alkaline-Earth Alloyed Zinc-Blende SiC and GaN

Strain Induced Spin-Splitting and Half-Metallicity in Antiferromagnetic Bilayer Silicene under Bending

Robust Half-Metallicity in Nonmetal Atoms Intercalated Two-Dimensional GaN Bilayer

Uniaxial Strain-Dependent Magnetic and Electronic Properties of (ga,mn)as Nanowires

Tailoring the structural and electronic properties of graphene-like ZnS monolayer using biaxial strain

Strain-tunable energy band parameters of graphene-like GaN

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Tensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2.

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Two-Dimensional Ges with Tunable Electronic Properties Via External Electric Field and Strain

Electronic Structure and Magnetism in G-C4n3 Controlled by Strain Engineering

Strain Robust Spin Gapless Semiconductors/half-Metals in Transition Metal Embedded MoSe2monolayer.

Effect of configuration and biaxial strain to electronic structure of half-fluorinated graphene

Strain Effect on the Phonon Transport Properties of Hydrogenated 2D GaN

Strain Effects on the Band Structures of Gan

Half-metal to Magnetic Semiconductor Transition in Mn-doped Monolayer Bi2O2Se Tuned by Strain

Direct Band Gap and Anisotropic Transport of ZnSb Monolayers Tuned by Hydrogenation and Strain.

Rich magnetic phase transitions and completely dual-spin polarization of zigzag PC3 nanoribbons under uniaxial strain