Electronic Structure and Magnetism in G-C4n3 Controlled by Strain Engineering

L. Z. Liu,X. L. Wu,X. X. Liu,Paul K. Chu
DOI: https://doi.org/10.1063/1.4916814
IF: 4
2015-01-01
Applied Physics Letters
Abstract:Regulation of magnetism and half-metallicity has attracted much attention because of its potential in spintronics. The magnetic properties and electronic structure of graphitic carbon nitride (g-C4N3) with external strain are determined theoretically based on the density function theory and many-body perturbation theory (G0W0). Asymmetric deformation induced by uniaxial strain not only regulates the magnetic characteristics but also leads to a transformation from half-metallicity to metallicity. However, this transition cannot occur in the structure with symmetric deformation induced by biaxial strain. Our results suggest the use of strain engineering in metal-free spintronics applications.
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