Strain-tunable Magnetic Order and Electronic Structure in 2D CrAsS4

Tengfei Hu,Wenhui Wan,Yanfeng Ge,Yong Liu
DOI: https://doi.org/10.1016/j.jmmm.2019.165941
IF: 3.097
2019-01-01
Journal of Magnetism and Magnetic Materials
Abstract:Using first-principles calculations based on density-functional theory, the effects of strain on the magnetic order and band structure of single-layer CrAsS4 have been investigated systematically. By applying a uniaxial tensile strain of 2.99% along the y-direction or a compressive strain of 1.76% along the x-direction, the single-layer CrAsS4 is determined to be an antiferromagnetic (AFM) semiconductor that undergoes a phase transition from AFM to ferromagnetic (FM) state. Further, the physical mechanism underlying the strain-dependent magnetic stability is discovered to be a competition between direct exchange and indirect superexchange interactions between the nearest neighbour Cr atoms. Moreover, the bandgap exhibits an abrupt change that accompanies the phase transition in the magnetic order. Our study provides an intuitive approach to design the strain-modulated spintronic devices.
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