J ul 2 01 9 Strain-tunable magnetic order and electronic structure in 2 D CrAsS

Tengfei Hu,Wenhui Wan,Yanfeng Ge,Yong Liu
2019-01-01
Abstract:The effect of strain on the magnetic order and band structure of single-layer CrAsS4 has been investigated by first-principles calculations based on density functional theory. We found that single-layer CrAsS4 was an antiferromagnetic (AFM) semiconductor, and would have a phase transition from AFM state to ferromagnetic (FM) state by applying a uniaxial tensile strain of 2.99% along the y-direction or compressive strain of 1.76% along the x-direction. The underlying physical mechanism of strain-dependent magnetic stability was further elucidated as the result of the competition between the direct exchange and indirect superexchange interactions. Moreover, band gap exhibit a abrupt change along with phase transition of magnetic order. Our study provides an intuitional approach to design strainmodulated spintronic devices.
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