Linearity Characterization of a Dual-Parallel Mach-Zehnder Modulator

Yanyang Zhou,Linjie Zhou,Shen Liu,Haike Zhu,Minjuan Wang,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/jphot.2016.2616488

2016-01-01

Abstract:We achieve highly-linear modulation by using two parallel simultaneously-driven Mach-Zehnder modulators. Measurement results show that the third-order intermodulation distortion is suppressed significantly.

What problem does this paper attempt to address?

Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions

Wei QI,Hai-feng SHAO,Hui YU,Xiao-qing JIANG

DOI: https://doi.org/10.3788/fgxb20163706.0758

2016-01-01

Chinese Journal of Luminescence

Abstract:Electro-optic modulators with high linearity are core devices of microwave photonic link. The modulation mechanism of the silicon optical modulator is based on the carrier dispersion effect which is nonlinear and its nonlinearity is highly related to the structure of PN junction. In this pa-per, the second-order spurious-free dynamic range ( SFDR2 ) is introduced to characterize the second harmonic distortion ( SHD ) of modulators. The SHD of silicon optical Mach-Zehnder modulator ( MZM) based on two most widely used doping patterns, i. e. , the lateral and the interdigitated PN junctions are compared with each other. The experimental results show that the lateral PN junction and interdigitated PN junction based MZMs have SFDR2 of 85. 11 dB·Hz1/2 and 78. 44 dB·Hz1/2 , respectively. The lateral PN junction based MZM has a better linearity.
Linearization of Two Cascaded Intensity-Modulator-based Analog Photonic Link

Xiang Zhu,Tao Jin,Hao Chi,Jinhai Zhou,Guochuan Tong,Dong Li,Lulu Zuo,Ying Fu

DOI: https://doi.org/10.1117/1.oe.57.8.080501

IF: 1.3

2018-01-01

Optical Engineering

Abstract:A linearization scheme based on two cascaded intensity modulators is proposed and experimentally demonstrated. By optimizing the biases, the power ratio and the phase difference between the drive signals applied to the two Mach-Zehnder modulators (MZMs), the third-order intermodulation distortion (IMD3) can be effectively eliminated over a wide operating bandwidth of 1 to 12 GHz without the same RF phase at two modulators, which is required in previous works. The ratio of the fundamental output to the IMD3 reaches 50.21 to 63.28 dB, which has an improvement of 18.35 to 31.42 dB compared to that of a single MZM link. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

Qiang Zhang,Hui Yu,Hao Jin,Tian Qi,Yan Li,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/jlt.2018.2839603

IF: 4.7

2018-01-01

Journal of Lightwave Technology

Abstract:In this paper, a model is built to investigate the linearity of silicon carrier depletion based Mach-Zehnder modulators (MZMs). By approximating the nonlinear electro-optical response of a PN junction with a fourth-order polynomial, the model quantitatively calculates the modulation linearity of three different MZM configurations that have been widely used in analog optical links, i.e., single, dual-parallel, and dual-series MZMs, and qualitatively explains their respective operation mechanisms to suppress the third-order intermodulation distortion. The optimal operation condition of each configuration is derived to enhance the first-order harmonic component and suppress the nonlinear distortion. A fair comparison is performed between the three configurations in terms of their robustness, footprint, strength of the first-order harmonic component, stability, and tolerance against variations of driving RT power and control error, and so on. The result indicates that the dual-series MZM represents a reasonable tradeoff between these performance characteristics of interests.
Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

Qiang Zhang,Hui Yu,Linghua Wang,Penghui Xia,Qiman Cheng,Zhilei Fu,Xiaofei Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.44.005655

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this Letter, we demonstrate a highly linear silicon modulator based on the dual-series Mach-Zehnder modulator (MZM) architecture. The two sub-MZMs are biased at quadrature points of opposite polarities. A proper power-splitting ratio of the driving RF signal on the two sub-MZMs enables the suppression of the third order intermodulation distortion (IMD3). The spurious-free dynamic ranges (SFDRs) for IMD3 are 109.5/100.5 dB.Hz(2/3 )at 1/10 GHz. In contrast, the reference single MZM on the same chip exhibits SFDRs of 95.2/86.8 dB.Hz(2/3) at 1/10 GHz at its optimal reverse bias voltage. (C) 2019 Optical Society of America
A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Qiang Zhang,Hui Yu,Zhilei Fu,Penghui Xia,Xiaofei Wang

DOI: https://doi.org/10.1364/OFC.2020.Th2A.12

2020-01-01

Abstract:We experimentally demonstrate a highly linear dual-series silicon modulator by tuning properly the power splitting ratio of the driving RF signal on the its two sub-MZMs, with SFDR of 109.5/100.5 dB·Hz2/3 at 1/10 GHz.
Ultrahigh-linearity dual-drive scheme using a single silicon modulator

Hengsong Yue,Kaizhong Chen,Tao Chu

DOI: https://doi.org/10.1364/OL.492756

2023-01-01

Abstract:Here, a high-linearity dual-drive scheme using a single silicon dual-drive Mach-Zehnder modulator is presented. The bias voltages and RF amplitudes of the two driv-ing arms are adjusted such that the nonlinearity of the transfer function of the Mach-Zehnder interferometer can-cels out the nonlinear response of the arms. Using the proposed scheme, the spurious-free dynamic range of the third-order intermodulation distortion is 123.4 dB Hz6/7, which is believed to be a record-breaking value for sili-con modulators. In comparison, the result obtained using a conventional single-drive scheme is 102.6 dB & BULL;Hz2/3. The proposed scheme could simplify the design of modulators and promote high-performance microwave photonic links. & COPY; 2023 Optica Publishing Group
Highly linear silicon Mach-Zehnder modulators with optimized phase-shifter

Sheng Yu,Yadong Liu,Tao Chu

DOI: https://doi.org/10.1109/MWP.2017.8168640

2017-01-01

Abstract:We have experimentally demonstrated that the linearity of a silicon Mach-Zehnder modulator (MZM) could be improved by optimizing its phase-shifter length (PSL). Through the optimization of the PSL, the third order intermodulation distortion of the silicon MZM could be 16.7 dB lower than that of a commercial LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MZM. The spurious free dynamic range of the link with the silicon MZM could be 4.1 dB higher than that with the LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MZM.
Linearity Measurement and Pulse Amplitude Modulation in a Silicon Single-Drive Push–Pull Mach–Zehnder Modulator

Yanyang Zhou,Linjie Zhou,Feiran Su,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/jlt.2016.2567067

IF: 4.7

2016-01-01

Journal of Lightwave Technology

Abstract:We characterize the modulation linearity of a silicon Mach-Zehnder modulator with a single-drive push-pull configuration. The 3-dB electro-optic bandwidths of the modulator are 15 and 32 GHz at 0 and 6 V reverse biases, respectively. The best spurious-free dynamic ranges (SFDRs) for the second-order harmonic distortion and the third-order intermodulation distortion are measured to be 97.7 dB.Hz(2/3) and 85.9 dB.Hz(1/2). The experimental measurement demonstrates that such a drive scheme can effectively reduce the modulation nonlinearity, especially the second harmonic distortion. Multi-level pulse amplitude modulation (PAM) is achieved using this high-linearity modulator with PAM-2,3,4,5 at a symbol rate of 40 Gbaud/s and PAM-8 at a symbol rate of 25 Gbaud/s.
Linearity Measurement Of A Silicon Single-Drive Push-Pull Mach-Zehnder Modulator

Yanyang Zhou,Linjie Zhou,Feiran Su,Jingya Xie,Haike Zhu,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/cleo_si.2015.sw3n.6

2015-01-01

Abstract:We investigate the linearity of a silicon Mach-Zehnder modulator with single-drive push-pull configuration. The spurious free dynamic range for second harmonic distortion (SFDRSHD) is 86 dB.Hz(1/2) with 4 dB improvement over previous best result.
Linearity of Microring-Assisted Mach-Zehnder Optical Modulators

潘剑侠,王帆,杨建义

IF: 0.6

2008-01-01

ACTA PHOTONICA SINICA

Abstract:The linearity property of microrings-asisted Mach-Zehnder optical modulators is analyzed,in which loss is taken into account,and the general equation for the condition that the 2nd and 3rd-oder harmonic terms of the modulation characteristic are both zero is derived.It can be found that,for the single-ring-and two-ring-assisted cases,the configurational parameters for the linearized Mach-Zehnder modulators can be directly calculated from analytical formulas.With this analytical formulas,the characteristics of the microring-assisted Mach-Zehnder modulators are investigated.
Linearization of Mach-Zehnder Modulator Using Microring-Based All-Pass Filter

杨建义,王帆,江晓清,屈红昌,吴亚明,王明华,王跃林

2005-01-01

Abstract:By applying the microring resonator to the Mach-Zehnder (MZ) optical modulator and employing the super-linear phase change characteristic of the all-pass filter, the sublinear modulation curve of the conventional MZ modulator is highly linearized. With properly controlled power coupling between the microring and the arm of the MZ modulator, the third-order distortion can be suppressed. If the transmission coefficient is set between 0.25 and 0.42, the linearity range larger than 90% can be easily achieved. The maximum linearity range is even up to 99.5%.
High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

Qiang Zhang,Hui Yu,Penghui Xia,Zhilei Fu,Xiaofei Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.391715

IF: 3.6

2020-01-01

Optics Letters

Abstract:In this Letter, we demonstrate an ultra-high linearity silicon carrier-depletion-based modulator by integrating a dual-parallel Mach-Zehnder modulator (DP-MZM) with a 1×2 thermo-optical switch. The operation principle is to manipulate power distributions of RF and optical signals among the two sub-MZMs, so their third-order nonlinearities can cancel each other. Spurious-free dynamic ranges (SFDRs) for the third-order intermodulation distortion (IMD3) are measured to be 123/120dB⋅Hz6/7 at 1/10 GHz, which represents a record-high linearity achieved with silicon-based modulators. As a contrast, SFDRs of a reference single MZM are 113/108dB⋅Hz4/5 at the same frequencies. Furthermore, we first demonstrate that this device is able to actively compensate nonlinear distortions of RF driving signals in the optical domain. Carrier-to-distortion ratios (CDRs) of deliberately distorted two-tone signals are improved from 40/50 dB to 45/72 dB after the modulation.
New Designed Mach-Zehnder GaAs Traveling-wave Interferometer Modulators Based on the Analytical Numeral Results of the Method of Line

Xu Zhao,Jianyi Yang,Zhiwu Wu,Minghua Wang

DOI: https://doi.org/10.3321/j.issn:1005-0086.1999.04.005

1999-01-01

Abstract:A new design of Mach-Zehnder traveling-wave interferometer modulators based on the slow-wave effect of the n n heavy doped epitaxial layer were proposed. When applying the method of line to finite conductivity structure, the permittivity of semiconductor was assumed to be complex. The influences on the microwave characteristics of the structural parameter of the modulator were analyzed in details by means of the method of line. Based on the analytical results, the structural parameters were obtained which is needed so as to obtain velocity match and the minimum loss. Its 3dB bandwidth is estimated around 30 GHz. A new optimal grooved structure, which can reduce the gap of electrodes and the thickness of waveguide, so as to make the modulator's 3 dB bandwidth to be expanded largely.
Characterization of Dual-Parallel Mach-Zender Modulator Based on Signal Level Control and Low-Frequency Detection

Ying Xu,Zhongtao Ruan,Yutong He,Junfeng Zhu,Mengke Wang,Zhiyao Zhang,Yali Zhang,Shangjiang Zhang,Yong Liu

DOI: https://doi.org/10.1109/csrswtc56224.2022.10098458

2022-01-01

Abstract:A self-calibrated method to characterize the electro-optic frequency response of dual-parallel Mach-Zehnder modulators (DPMZMs) is proposed based on signal level control and low-frequency detection. The modulation index and the half-wave voltage are extracted from the functional relationship of the desired low-frequency amplitude and the microwave driving level. This method features self-calibration and low-frequency measurement for high-speed DPMZMs.
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015093

IF: 3.8

2012-01-01

Optics Express

Abstract:A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America
All-optical Signal Processing for Linearity Enhancement of Mach–Zehnder Modulators

Xiao-Ping Zheng,Guo-Qiang Zhang,Shangyuan Li,Han-Yi Zhang,Bing-Kun Zhou

DOI: https://doi.org/10.1007/s11434-014-0442-z

2014-01-01

Abstract:This paper presents the fundamental principles and recent advances in the field of linearity enhancement of Mach–Zehnder modulators in microwave photonic systems using all-optical signal processing.A review of the fundamentals and applications that implement the linearity improvement is also provided.
High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
Linearity of Microring-assisted Push-Pull Mach-Zehnder Intensity Modulator

Jian-yi YANG,Fan WANG,Xiao-qing JIANG,Hong-chang QU,Ya-ming WU,Ming-hua WANG

DOI: https://doi.org/10.3321/j.issn:1005-0086.2005.10.005

2005-01-01

Abstract:Linearity of the M-Z modulator with the two-ring-assisted push-pull(TRAPP) configuration was studied under the loss influence.It was found that the linearity of the TRA-MZ modulator is greatly high,even at the low-loss condition.By properly setting the biasing phases,the 2~(nd)-and 3~(rd)-order harmonic terms of the modulation curves can be removed.The maximum linearity range is larger than 90% when the round-trip loss of the microrings is less than 6 dB.Analysis shows that the output phase of the microring-based all-pass filter will vary only within a limited range if the loss of the microring is very large,and the maximum modulation depth of the TRA-MZ modulator will be less than unit and become the major factor that reduces the linearity range though the modulation curve of the TRA-MZ modulator is still in high linearity within its modulation depth.
The Analysis on Improving Linearity of Microring-Assisted Mach-Zehnder Modulator

Jianxia Pan,Fan Wang,Zhao Gong,Jianyi Yang

DOI: https://doi.org/10.1049/cp:20070755

2007-01-01

Abstract:The microring-assisted (MRA) Mach-Zehnder (MZ) modulator has very high linearity. In this paper, the parameter expressions, which can remove the 2nd-and 3rd-order harmonic terms of the modulation curve simultaneously at the bias point, is investigated. From the analysis, the analytic formulas of the design parameters in the most usual case, the modulator with one or two microrings assisted, can be attained. These expressions provide a very efficacious and convenient approach for designing and analyzing the MRA-MZ modulators. And by the formulas, the specific characteristic of the MRA-MZ modulators is presented in this paper.
High-Linearity Dual-Parallel Mach–Zehnder Modulators in Thin-Film Lithium Niobate

Tao Yang,Lutong Cai,Zhanhua Huang,Lin Zhang

DOI: https://doi.org/10.3390/photonics11100987

IF: 2.536

2024-10-21

Photonics

Abstract:Microwave photonic (MWP) systems are inseparable from conversions of microwave electrical signals into optical signals, and their performances highly depend on the linearity of electro-optic modulators. Thin-film lithium niobate (TFLN) is expected to be an ideal platform for future microwave photonic systems due to its compact size, low optical loss, linear electro-optic effect, and high bandwidth. In this paper, we propose a TFLN modulator with a low voltage–length product (VπL) of 1.97 V·cm and an ultra-high-linearity carrier-to-distortion ratio (CDR) of 112.33 dB, using a dual-parallel Mach–Zehnder interferometer configuration. It provides an effective approach to fully suppress the third-order intermodulation distortions (IMD3), leading to 76 dB improvement over a single Mach–Zehnder modulator (MZM) in TFLN. The proposed TFLN modulator would enable a wide variety of applications in integrated MWP systems with large-scale integration, low power consumption, low optical loss, and high bandwidth.

optics

Linearity Characterization of a Dual-Parallel Mach-Zehnder Modulator

Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions

Linearization of Two Cascaded Intensity-Modulator-based Analog Photonic Link

Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Ultrahigh-linearity dual-drive scheme using a single silicon modulator

Highly linear silicon Mach-Zehnder modulators with optimized phase-shifter

Linearity Measurement and Pulse Amplitude Modulation in a Silicon Single-Drive Push–Pull Mach–Zehnder Modulator

Linearity Measurement Of A Silicon Single-Drive Push-Pull Mach-Zehnder Modulator

Linearity of Microring-Assisted Mach-Zehnder Optical Modulators

Linearization of Mach-Zehnder Modulator Using Microring-Based All-Pass Filter

High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

New Designed Mach-Zehnder GaAs Traveling-wave Interferometer Modulators Based on the Analytical Numeral Results of the Method of Line

Characterization of Dual-Parallel Mach-Zender Modulator Based on Signal Level Control and Low-Frequency Detection

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

All-optical Signal Processing for Linearity Enhancement of Mach–Zehnder Modulators

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Linearity of Microring-assisted Push-Pull Mach-Zehnder Intensity Modulator

The Analysis on Improving Linearity of Microring-Assisted Mach-Zehnder Modulator

High-Linearity Dual-Parallel Mach–Zehnder Modulators in Thin-Film Lithium Niobate