Abstract:Tin monosulfide can be grown in cubic (pi-SnS) and orthorhombic (alpha-SnS) polymorphs by low-temperature atomic layer deposition (ALD). The optical properties of these polymorphs make them attractive for the realization of plasmonic solar cells with ultrathin absorber layers down to 10 nm in thickness. SnS is also an earth-abundant and nontoxic compound semiconductor of high interest for regular thin-film photovoltaics. To better understand the behavior of the two SnS polymorphs in ultrathin solar cell configurations, we here fabricate, characterize, and analyze a range of such devices. ALD is used to grow SnS and form heterojunctions with zinc oxysulfide [Zn(O,S)], acting as a buffer layer with a composition-tunable bandgap. Apart from the roles of the SnS polymorph and Zn(O,S) composition, the effects of the back contact material and thicknesses of buffer and absorber layers are investigated. Devices using pi-SnS and pure ZnO buffers yield the highest photocurrents (3.1 mA/cm(2)) and higher open circuit voltage (159 mV) than similar alpha-SnS-based devices. Analysis of the equivalent-circuit parameters suggests that interface recombination limits the voltage for these devices. While Zn(O,S) with a higher sulfur content provides chemical passivation of the SnS interface and excessive open circuit voltages above 600 mV, it also exhibits a too high conduction band offset, which hampers current collection. A growth delay during the ALD of Zn(O,S) on SnS initially amplifies the known sulfur-oxygen exchange reaction, such that a sulfur-rich Zn(O,S) region forms next to the SnS interface. This causes a thin ZnS-like barrier to form already for low cycle fractions of the H2S precursor in the ALD super-cycle. Voltage and fill factor trends suggest an optimal SnS absorber layer thickness in the range of 15-35 nm, presenting an opportunity for plasmonic absorption enhancement. Devices with pi-SnS show most promise, but interface recombination versus current-blocking is a dilemma for the SnS/Zn(O,S) heterojunction.

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