A Salification-Induced Charge Transfer Effect for Improving the Resistive Memory Performance of Azo Derivative-Based Devices

Quan Liu,Qingfeng Xu,Huilong Dong,Hua Li,Dongyun Chen,Lihua Wang,Youyong Li,Jianmei Lu

DOI: https://doi.org/10.1039/c5ra25099d

IF: 4.036

2016-01-01

RSC Advances

Abstract:We introduce salification to prepare an organic resistive memory material with higher ON/OFF ratio and properties.

What problem does this paper attempt to address?

Deriving Highly Oriented Organic Nanofibers and Ternary Memory Performance Via Salification-Induced Effects

Cheng Zhang,Yang Li,Yan Zhou,Qijian Zhang,Hua Li,Jianmei Lu

DOI: https://doi.org/10.1039/c8cc04112a

IF: 4.9

2018-01-01

Chemical Communications

Abstract:A novel pyridine-based organic conjugated molecule (NCPy) has been successfully synthesized and converted into an organic pyridinium salt (NCPy-salt). Highly oriented organic nanofibers and high-quality films were obtained by transforming the molecule to a salt form. This transformation also resulted in a unique ternary resistive switching memory behavior.
Triple-Cation Organic–Inorganic Hybrid Perovskite Memristor Achieving Adjustable Analog–Digital Conversion Behavior

Yin Yue,Wang Hongsu,Jin Chaoqi,Sha Jian,Xiong Yuxuan,Shang Yueyang,Guan He,Wang Shaoxi,Wang Yucheng

DOI: https://doi.org/10.1007/s11664-022-09894-z

IF: 2.1

2022-01-01

Journal of Electronic Materials

Abstract:As an emerging two-terminal device, memristors have attracted extensive interest due to their integration of memory and computing, which can drastically boost the progress of high-density storage and artificial intelligence. Recently, organometal trihalide perovskites (OTPs) were reported to be promising active materials for photoelectronic applications. In this manuscript, a CsFAMAPbIBr-based memristor with a structure of W/Cs 0.05 (FA x MA 1− x ) 0.95 PbBr y I 3− y /ITO is presented. By applying sweeping voltage with different amplitudes or scanning speed, the memory characteristic of the device can be tuned to realize the conversion between analog and digital. Furthermore, we elaborate the conversion mechanism in detail mainly by space-charge-limited conduction. This work paves a way for analyzing the influence of external applied voltage on memristor characteristics and could be beneficial to the potential application in digital logic application and neuromorphological analysis.
Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Y. M. Sun,C. Song,J. Yin,L. L. Qiao,R. Wang,Z. Y. Wang,X. Z. Chen,S. Q. Yin,M. S. Saleem,H. Q. Wu,F. Zeng,F. Pan

DOI: https://doi.org/10.1063/1.5098382

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Large fluctuations of key parameters in cation-based resistive random access memory (RRAM), which originate from stochastic growth of metallic conductive filaments, always impose a significant barrier to the practical application of memory devices. Here, we propose an ordinary bilayer oxide structure of Ag/TaOx/TaOy/Pt (x < y) to address this issue and achieve the performance enhancement of memory cells. This memory device is inclined to form nano-cone-shaped filaments under external bias, and the tips of filaments provide an electric field concentration, achieving an effective control of filament growth. Compared with the single-layer device Ag/TaOx/Pt, the bilayer device manifests a larger ON/OFF ratio, much lower operation voltages and RESET currents, a higher response speed, and better uniformity. The insertion of the oxygen-rich layer also brings about the tunability of switching voltages and the elimination of the negative-SET phenomenon. Our experiments might pave the way for high-density emerging memory commercial applications.
A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching.

Benlin Hu,Xiaojian Zhu,Xinxin Chen,Liang Pan,Shanshan Peng,Yuanzhao Wu,Jie Shang,Gang Liu,Qing Yan,Run-Wei Li

DOI: https://doi.org/10.1021/ja307933t

IF: 15

2012-01-01

Journal of the American Chemical Society

Abstract:The uniformity of operating parameters in organic nonvolatile memory devices is very important to avoid false programming and error readout problems. In the present work, we fabricated an organic resistive-switching memory based on protonic-acid-doped polyazomethine (PA-TsOH), which demonstrates an excellent operative uniformity and multilevel storage capability. The deliberate tuning of the resistance states can be attributed to the electric-field-controlled molecular doping of the imine-containing polymers.
Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules

Quan Liu,Huilong Dong,Youyong Li,Hua Li,Dongyun Chen,Lihua Wang,Qingfeng Xu,Jianmei Lu

DOI: https://doi.org/10.1002/asia.201501030

2015-01-01

Chemistry - An Asian Journal

Abstract:Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.
Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:ms

Yizhen Li,Xinhui Zhao,Ke Chang,Yiru Niu,Xinna Yu,Hui Wang

DOI: https://doi.org/10.1103/physrevapplied.17.034007

IF: 4.6

2022-01-01

Physical Review Applied

Abstract:Resistive random-access memory has attracted tremendous attention and numerous investigations as a promising next-generation nonvolatile memory device to address the physical limits of flash memory. Particularly, physically transient resistive switching memory is intensively researched for its degradable and environmentally friendly characteristics. Zinc oxide ($\mathrm{Zn}\mathrm{O}$), as a low-cost biocompatible and biodegradable material, has been widely used in the dielectric layer, yet many previous studies on $\mathrm{Zn}\mathrm{O}$-based memory devices show unsatisfactory switching properties. In this work, ${\mathrm{Mo}\mathrm{S}}_{2}$ quantum dots (QDs) are added between the $\mathrm{W}$ bottom electrode and $\mathrm{Zn}\mathrm{O}$ insulator by spin coating ($\mathrm{W}/{\mathrm{Mo}\mathrm{S}}_{2}$ QD$/\mathrm{Zn}\mathrm{O}/\mathrm{Ag}$) to improve its resistive switching behavior. The modified device exhibits distinctly better properties, including more-uniform switching parameters (low- and high-resistance states, ${V}_{\mathrm{set}}$, ${V}_{\mathrm{reset}}$), ultralow threshold voltages, and steady retention. Moreover, we transfer the device onto polyvinyl alcohol substrate, making it fully degradable, and it is completely dissolved in phosphate-buffered solution after 40 min. These results indicate that the ${\mathrm{Mo}\mathrm{S}}_{2}$ QD--optimized transient resistive switching memory shows great potential in green electronics, implantable biomedical devices, and secure information-storage applications.
Intramolecular Hydrogen Bonding Interactions Induced Enhancement in Resistive Switching Memory Performance for Covalent Organic Framework‐Based Memristors

Hongling Yu,Pan‐Ke Zhou,Xiong Chen

DOI: https://doi.org/10.1002/adfm.202308336

IF: 19

2023-08-31

Advanced Functional Materials

Abstract:Two covalent organic frameworks (COFs) films are prepared to construct resistive‐switching (RS) memory devices. The integration of hydroxyl motifs can improve the RS performance due to intramolecular hydrogen bonding interactions, demonstrating a lower turn‐on voltage and a higher ON/OFF current ratio as well as exceptional high‐temperature endurance and solvent resistance. Covalent organic frameworks (COFs) are promising active mediums for high‐performance data storage devices stemming from their high crystallinity, ordered porous channels, predetermined topology, and rigid architectures, while relative studies are still limited. Here, two COFs (i.e., COF‐EtD and COF‐EtA)‐based resistive‐switching memory devices are proposed to demonstrate the impact of intramolecular hydrogen bonding interactions, both of which exhibit nonvolatile write‐once‐read‐many (WORM) memory characteristics. Comparatively, COF‐EtD with the hydroxyl motif decoration illustrated a lower SET voltage (i.e., turn‐on voltage) and a higher ON/OFF current ratio as well as exceptional high‐temperature endurance and solvent resistance. Mechanism explorations suggest that the resistance‐switching behavior of COF‐EtD may be controlled by the synergistic effect of space‐charge‐limited current and conductive filaments. This finding is the first example of simply varying the functional group of COFs to regulate the WORM resistive switching behavior, providing some inspiration for the advancement of electronic memories and positively contributing to the realization of high endurance and high‐density electric storage materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Multilevel Conductance Switching of a Memory Device Induced by Enhanced Intermolecular Charge Transfer

qianfeng gu,jinghui he,dongyun chen,huilong dong,youyong li,hua li,qingfeng xu,jianmei lu

DOI: https://doi.org/10.1002/adma.201502274

IF: 29.4

2015-01-01

Advanced Materials

Abstract:The modification of the terminal electron-donating groups induces a critical change in molecular aggregation and the intermolecular charge-transfer effect of the symmetric D-A1-A2-A1-D molecules that correlate with an addressable variation of memory performance from binary to ternary.
Molecular-Potential and Redox Coregulated Cathodic Electrosynthesis Toward Ionic Azulene-Based Thin Films for Organic Memristors.

Qiongshan Zhang,Dongchuang Wu,Yubin Fu,Jinyong Li,Yu Chen,Bin Zhang

DOI: https://doi.org/10.1021/acsami.3c19527

IF: 9.5

2024-01-01

ACS Applied Materials & Interfaces

Abstract:Organic memristors as promising electronic units are attracting significant attention owing to their simplicity of molecular structure design. However, fabricating high-quality organic films via novel synthetic technologies and exploring unprecedented chemical structures to achieve excellent memory performance in organic memristor devices are highly challenging. In this work, we report a cathodic electropolymerization to synthesize an ionic azulene-based memristive film (PPMAz-Py+Br-) under the molecular-potential and redox coregulation. During the cathodic electropolymerization process, electropositive pyridinium salts migrate to the cathode under an electric field, undergo a reduction-coupling deprotonation reaction, and polymerize into a uniform film with a controllable thickness on the electrode surface. The prepared Al/PPMAz-Py+Br-/ITO devices not only exhibit a high ON/OFF ratio of 1.8 x 10(3), high stability, long memory retention, and endurance under a wide range of voltage scans, but also achieve excellent multilevel storage and history-dependent memristive performance. In addition, the devices can mimic important biosynaptic functions, such as learning/forgetting function, synaptic enhancement/inhibition, paired-pulse facilitation/depression, and spiking-rate-dependent plasticity. The tunable memristive performances are attributed to the capture of free electrons on pyridinium cations, the migration of the aluminum ions (Al3+), and the form of Al conductive filaments under voltage scans.
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Pei-Yu Wu,Hao-Xuan Zheng,Chih-Cheng Shih,Ting-Chang Chang,Wei-Jang Chen,Chih-Cheng Yang,Wen-Chung Chen,Mao-Chou Tai,Yung-Fang Tan,Hui-Chun Huang,Xiao-Hua Ma,Yue Hao,Tsung-Ming Tsai,Simon M. Sze

DOI: https://doi.org/10.1109/LED.2020.2968629

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO based-RRAM. The results of material analysis indicate that using CO 2 as ammonia hydroxide carrier during the annealing process leads to the reduction in dangling bond density. This can be clearly observed in the decrease in breakdown voltage during the forming process and a lower operating current during operation. Furthermore, in this ammonium-doped ZnO based-RRAM, we study the molecular doping of NH 3 in ZnO, where the endurance and retention properties are improved as well. These improvements can be attributed to the higher concentration of nitrogen in the switching layer, which can effectively control the active oxygen ions during the operation process.
Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS2 Quantum Dots

Yizhen Li,Xinhui Zhao,Ke Chang,Yiru Niu,Xinna Yu,Hui Wang

DOI: https://doi.org/10.1103/PhysRevApplied.17.034007

IF: 4.6

2022-01-01

Physical Review Applied

Abstract:Resistive random-access memory has attracted tremendous attention and numerous investigations as a promising next-generation nonvolatile memory device to address the physical limits of flash memory. Particularly, physically transient resistive switching memory is intensively researched for its degradable and environmentally friendly characteristics. Zinc oxide (ZnO), as a low-cost biocompatible and biodegradable material, has been widely used in the dielectric layer, yet many previous studies on ZnO-based memory devices show unsatisfactory switching properties. In this work, MoS2 quantum dots (QDs) are added between the W bottom electrode and ZnO insulator by spin coating (W/MoS2 QD/ZnO/Ag) to improve its resistive switching behavior. The modified device exhibits distinctly better properties, including more-uniform switching parameters (low-and high-resistance states, Vset, Vreset), ultralow threshold voltages, and steady retention. Moreover, we transfer the device onto polyvinyl alcohol substrate, making it fully degradable, and it is completely dissolved in phosphate-buffered solution after 40 min. These results indicate that the MoS2 QD-optimized transient resistive switching memory shows great potential in green electronics, implantable biomedical devices, and secure information-storage applications.
Polydopamine Film Self‐Assembled at Air/Water Interface for Organic Electronic Memory Devices

Huaping Wang,Qianqing Jiang,Jie Yang,Dong Li,Xiahong Zhou,Le Cai,Gui Yu

DOI: https://doi.org/10.1002/admi.202000979

IF: 5.4

2020-10-05

Advanced Materials Interfaces

Abstract:Memristive devices have shown promising applications in various fields (e.g., non‐volatile memory, reconfigurable switches, and bio‐inspired neuromorphic computing). Despite the significant advances in this field, the exploration of nanomaterials with tunable composition, thickness, dimension, and conductivity for memristive devices is still in great necessity. Here, the transformation of the ultrathin film polydopamine (PDA) obtained at air/water interface from amorphous to quasi‐ordered structure is revealed. Owing to the unique feature, the self‐assembled PDA film at air/water interface is firstly employed as the active material in constructing write‐once‐read‐many‐times (WORM) memory devices. With an increase in the applied electric field, the device shows a switching from high resistance state (HRS, OFF state) to low resistance state (LRS, ON state) with a high ON/OFF current ratio of >103. Furthermore, the abundant amidogen and phenolic hydroxyl group enable the in situ Ag nanoparticle decoration on the PDA film, which can be further used in the construction of anisotropic volatile memristors with a high ON/OFF current ratio (>104), exceptional stability and good integrability.

materials science, multidisciplinary,chemistry
Ferroelectric Polarization and Conductance Filament Coupling for Large Window and High-Reliability Resistive Memory and Energy-Efficient Synaptic Devices

Ming Li,Zhengmiao Zou,Zihao Xu,Junfeng Zheng,Yushan Li,Ruiqiang Tao,Zhen Fan,Guofu Zhou,Xubing Lu,Junming Liu

DOI: https://doi.org/10.1016/j.jmst.2024.01.039

2024-01-01

Journal of Material Science and Technology

Abstract:Ferroelectric capacitors hold great promise for non-volatile memory applications. However, the challenge lies in fabricating resistive switching devices with a high on/off ratio, excellent non-volatility, and a simple manufacturing process. Here, a novel approach is introduced by demonstrating the efficacy of the coupling effect between ferroelectric polarization and oxygen vacancy-based conductive filaments in Hf 0.5 Zr 0.5 O 2 (HZO) films for the creation of non-volatile resistive switching memory devices, achieving an impressive on/off ratio of 6.8 x 10 3 at + 1.8 V. An in-depth exploration of the resistive switching mechanism is provided and subsequently the outstanding durability and retention characteristics of these devices for resistive switching is validated. Furthermore, the device's capacity to emulate non-volatile synaptic functionalities is assessed. Our results reveal that under pulsed conditions of 1 V/-2 V with 1 mu s pulses spaced 50 ms apart, the device can robustly achieve potentiation/depression synaptic plasticity, while exhibiting energy consumption (0.16 fJ for potentiation, 0.12 fJ for depression) reduced by 1-2 orders of magnitude compared to biological synapses. This work holds significant value as a reference for the fabrication of energy-efficient, non-volatile memory and synaptic devices. (c) 2024 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
Conductance Quantization in A Ag Filament-Based Polymer Resistive Memory

Shuang Gao,Fei Zeng,Chao Chen,Guangsheng Tang,Yisong Lin,Zifeng Zheng,Cheng Song,Feng Pan

DOI: https://doi.org/10.1088/0957-4484/24/33/335201

IF: 3.5

2013-01-01

Nanotechnology

Abstract:Resistive switching and conductance quantization are systematically studied in a Ag/poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester/indium-tin oxide sandwich structure. The observed bipolar switching behavior can be attributed to the formation and dissolution of Ag filaments during positive and negative voltage sweeps, respectively. More importantly, conductance quantization with both integer and half integer multiples of single atomic point contact can be realized by slowing down the voltage sweep speed as well as by pulse measurement. The former may reflect the formed Ag filaments with different atomic point contacts, while the latter probably originates from the interaction between the Ag filaments and the elemental hydrogen provided by the organic storage medium. With appropriate current compliances, low resistance states with desired quantized conductance values are successfully achieved, thus showing the potential for ultrahigh density memory applications. Besides, 100 successive switching cycles with densely distributed resistance values of each resistance state and extrapolated retention properties over ten years are also demonstrated.
Highly Improved Resistive Switching Performances of the Self-Doped Pt/HfO 2 :Cu/cu Devices by Atomic Layer Deposition

Sen Liu,Wei Wang,QingJiang Li,XiaoLong Zhao,Nan Li,Hui Xu,Qi Liu,Ming Liu

DOI: https://doi.org/10.1007/s11433-016-0389-9

2016-01-01

Science China Physics Mechanics and Astronomy

Abstract:Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile memory.But this memory suffers from large dispersion of resistive switching parameters due to the intrinsic randomness of the conductive filament. In this work, we have proposed a self-doping approach to improve the resistive switching characteristics. The fabricated Pt/HfO 2 :Cu/Cu device shows outstanding nonvolatile memory properties, including high uniformity, good endurance, long retention and fast switching speed. The results demonstrate that the self-doping approach is an effective method to improve the metal-oxide ECM memory performances and the self-doped Pt/HfO 2 :Cu/Cu device has high potentiality for the nonvolatile memory applications in the future.
Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices

Bai Sun,Xin Zhang,Guangdong Zhou,Chunming Zhang,Pingyuan Li,Yudong Xia,Yong Zhao

DOI: https://doi.org/10.1016/j.jallcom.2016.10.008

IF: 6.2

2017-01-01

Journal of Alloys and Compounds

Abstract:Resistive random access memory (RRAM) has been developing as a most promising non-volatile memory in the current memory technology. In this work, ZnFe2O4 (ZFO) nano powder were firstly prepared by co-precipitation assisted hydrothermal process. Further, the resistive switching memory devices with Ag/Cu doped ZnFe2O4 (CZFO)/Au/Si and Ag/ZFO/Au/Si structures grown on silicon (Si) substrate were prepared by radio frequency magnetron sputtering, and their memory behaviors were contrastively investigated. It is observed the Cu doping can obviously affect the bipolar resistive switching memory characteristics. Thus a model concerning the formation and rupture of Cu ions assisted conductive filament inside the CZFO layer is suggested to explain the change of memory behaviors. These works provide a foundation for exploring the memory application of multifunctional material and further regulate their nonvolatile memory behaviors.
An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: when Hafnium Meets ITO in an Electrode.

Lei Li,Chang,Cong Ye,Xinnan Lin,Rui Zhang,Zhong Xu,Yi Zhou,Wen Xiong,Tzu-Peng Kuo

DOI: https://doi.org/10.1039/c9nr08943h

IF: 6.7

2020-01-01

Nanoscale

Abstract:Emerging resistive random access memory has attracted extensive research enthusiasm. In this study, an indirect way to improve resistive random access memory (RRAM) comprehensive performance through electrode material re-design without intensive switching layer engineering is presented by adopting a hafnium-indium-tin-oxide composite. Working parameters of the device can be effectively improved: not only are low operation power consumption and high working stability achieved, but the memory window is significantly enlarged, accompanied by an automatic self-current-compliance function. The correlation between hafnium incorporation and performance improvements and the corresponding current conduction mechanisms have been thoroughly investigated to clarify the resistive switching behavior and to explain the oxygen absorption buffer effect. The hafnium atom, with large atomic radius, is surrounded by soft electron clouds and has high chemical activity to attract oxygen ions. It facilitates the accumulation of more oxygen ions around the interface of the top electrode and the resistive switching layer, leading to lower current and Schottky conduction. This study presents an important strategy for designing and developing electrode materials to improve the characteristics of RRAM and offers an indirect method to modify device working behaviors, also unveiling a promising prospect for its potential future application in low-power information storage and calculation technology.
Conductive metallic filaments dominate in hybrid perovskite-based memory devices

Yang Huang,Zhenxuan Zhao,Chen Wang,Hongbo Fan,Yiming Yang,Jiming Bian,Huaqiang Wu

DOI: https://doi.org/10.1007/s40843-019-9433-4

2019-01-01

Science China Materials

Abstract:Organic-inorganic hybrid perovskites (OHPs) are well-known as light-absorbing materials in solar cells and have recently attracted considerable attention for the applications in resistive switching memory. Previous studies have shown that ions can migrate to form a conductive channel in perovskites under an external voltage. However, the exact resistance mechanism for Ag or halogens which dominate the resistive behavior is still controversial. Here, we demonstrate a resistive switching memory device based on Ag/FA 0.83 MA 0.17 Pb(I 0.82 Br 0.18 ) 3 /fluorine doped tin oxide (FTO). The migration of Ag cations and halide anions is demonstrated by energy dispersive X-ray spectroscopy (EDS) after the SET process (positive voltage on Ag). By comparing the I - V behavior of the Au-based devices, it is clear that the conductive channel formed by Ag is the main factor of the switching characteristics for Ag-based devices. Meanwhile, by controlling the appropriate SET voltage, two kinds of resistance characteristics of the analog switch and threshold switch can be realized in the Ag-based device. As a result, it may be possible to implement both data storage and neuromorphic computing in a single device.
Synergistically Modulating Conductive Filaments in Ion‐Based Memristors for Enhanced Analog In‐Memory Computing

Jinyong Wang,Yujing Ren,Ze Yang,Qiaoya Lv,Yu Zhang,Mingyue Zhang,Tiancheng Zhao,Deen Gu,Fucai Liu,Baoshan Tang,Weifeng Yang,Zhiqun Lin

DOI: https://doi.org/10.1002/advs.202309538

IF: 15.1

2024-03-17

Advanced Science

Abstract:This study leverages the synergy of modulating conductive filament to render a significant breakthrough in memory window, extending up to 1 million, and retention for up to 10 years, fostering advanced paradigms in bionics. These results underscore the judicious regulation of ion migration as a viable route to high‐performance memristors for neuromorphic computing applications. Memristors offer a promising solution to address the performance and energy challenges faced by conventional von Neumann computer systems. Yet, stochastic ion migration in conductive filament often leads to an undesired performance tradeoff between memory window, retention, and endurance. Herein, a robust memristor based on oxygen‐rich SnO2 nanoflowers switching medium, enabled by seed‐mediated wet chemistry, to overcome the ion migration issue for enhanced analog in‐memory computing is reported. Notably, the interplay between the oxygen vacancy (Vo) and Ag ions (Ag+) in the Ag/SnO2/p++‐Si memristor can efficiently modulate the formation and abruption of conductive filaments, thereby resulting in a high on/off ratio (>106), long memory retention (10‐year extrapolation), and low switching variability (SV = 6.85%). Multiple synaptic functions, such as paired‐pulse facilitation, long‐term potentiation/depression, and spike‐time dependent plasticity, are demonstrated. Finally, facilitated by the symmetric analog weight updating and multiple conductance states, a high image recognition accuracy of ≥ 91.39% is achieved, substantiating its feasibility for analog in‐memory computing. This study highlights the significance of synergistically modulating conductive filaments in optimizing performance trade‐offs, balancing memory window, retention, and endurance, which demonstrates techniques for regulating ion migration, rendering them a promising approach for enabling cutting‐edge neuromorphic applications.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Fluorinated Quinoxaline-Based Conjugated Polymers for High-Density Nonvolatile Memory Devices

Yanting Du,Jiayu Li,Songhao Zhao,Haifeng Yu,Lei Ji,Shuhong Wang,Cheng Wang

DOI: https://doi.org/10.1021/acsapm.4c00526

2024-01-01

ACS Applied Polymer Materials

Abstract:Fluorinated materials have been widely utilized in optoelectronic devices. However, there has been a rare exploration of the use of fluorinated materials in polymer-based memory devices. To explore the impact of fluorinated acceptors on the storage capabilities of polymers, six donor-acceptor (D-A type) conjugated polymers were synthesized by using the Suzuki coupling reaction. Subsequently, polymers were utilized in the fabrication of basic sandwich-structured devices consisting of layers of indium-tin-oxide/polymer/aluminum (ITO/polymer/Al). Fluorinated polymers demonstrated significantly higher current switching ratios compared to non-fluorinated polymers. This increased ratio suggested an improved resolution in the readout, thus decreasing the probability of misinterpretation. It is imperative to emphasize that the poly[2-(2,3-bis(4-fluorophenyl)quinoxaline-5-yl)-9-(heptadecane-9-yl)-9H-carbazole] (PCzFQ) device exhibited exceptional performance, with an OFF:ON1:ON2 ratio as high as 1:10(1.8):10(4.7). This work supported the feasibility of introducing fluorine atoms into the acceptor unit to enhance the properties of memory devices, providing an available approach for synthesizing high-performance ternary memory materials.

A Salification-Induced Charge Transfer Effect for Improving the Resistive Memory Performance of Azo Derivative-Based Devices

Deriving Highly Oriented Organic Nanofibers and Ternary Memory Performance Via Salification-Induced Effects

Triple-Cation Organic–Inorganic Hybrid Perovskite Memristor Achieving Adjustable Analog–Digital Conversion Behavior

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching.

Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:ms

Intramolecular Hydrogen Bonding Interactions Induced Enhancement in Resistive Switching Memory Performance for Covalent Organic Framework‐Based Memristors

Multilevel Conductance Switching of a Memory Device Induced by Enhanced Intermolecular Charge Transfer

Molecular-Potential and Redox Coregulated Cathodic Electrosynthesis Toward Ionic Azulene-Based Thin Films for Organic Memristors.

Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS<sub>2</sub> Quantum Dots

Polydopamine Film Self‐Assembled at Air/Water Interface for Organic Electronic Memory Devices

Ferroelectric Polarization and Conductance Filament Coupling for Large Window and High-Reliability Resistive Memory and Energy-Efficient Synaptic Devices

Conductance Quantization in A Ag Filament-Based Polymer Resistive Memory

Highly Improved Resistive Switching Performances of the Self-Doped Pt/HfO 2 :Cu/cu Devices by Atomic Layer Deposition

Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices

An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: when Hafnium Meets ITO in an Electrode.

Conductive metallic filaments dominate in hybrid perovskite-based memory devices

Synergistically Modulating Conductive Filaments in Ion‐Based Memristors for Enhanced Analog In‐Memory Computing

Fluorinated Quinoxaline-Based Conjugated Polymers for High-Density Nonvolatile Memory Devices