Abstract:Transition metal dichalcogenides (TMDs) have emerged as a new class of two-dimensional (2D) materials, which are promising for diverse applications in nanoelectronics, optoelectronics, and photonics. To satisfy the requirements of the building blocks of functional devices, systematic modulation of the band gap and carrier type of TMDs materials becomes a significant challenge. Here, we report a salt-assisted chemical vapor deposition (CVD) approach for the simultaneous growth of alloy W(SxSe1-x)2 nanosheets with variable alloy compositions. Electrical transport studies based on the as-fabricated W(SxSe1-x)2 nanosheet field-effect transistors (FETs) demonstrate that charge carrier types of alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. Temperature-dependent current measurement shows that the main scattering mechanism is the charged impurity scattering. The effective Schottky barrier heights of bipolar W(SxSe1-x)2 transistors are initially increased and then decreased with increasing positive (or negative) gate voltage, which is tunable by varying the alloy composition. In addition, the tunability of these W(SxSe1-x)2-based ambipolar transistors is suitable for logic and analog applications and represents a critical step toward future fundamental studies as well as for the rational design of new 2D electronics with tailored spectral responses, and simpler and higher integration densities. Finally, the high photoresponsivity (up to 914 mA W-1) and detectivity (4.57 × 1010 Jones) of ultrathin W(SxSe1-x)2 phototransistors imply their potential applications in flexible light-detection and light-harvesting devices. These band gap engineered 2D structures could open up an exciting opportunity and contribute to finding diverse applications in future functional electronic/optoelectronic devices.

Stable Electrical Performance Observed in Large-Scale Monolayer Wse2(1-X)S2x with Tunable Band Gap

(Invited) Band Gap Tunable Monolayer WSe2(1-x)S2x Synthesis, Characterization and Device Applications

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Regulating the conductance of tungsten diselenide by oxygen plasma and improving its electrical stability by encapsulation

Synthesis and enhanced electrochemical catalytic performance of monolayer WS2(1-x) Se2x with a tunable band gap.

Dual‐channel Type Tunable Field‐effect Transistors Based on Vertical Bilayer WS2(1 − X)se2x/sns2 Heterostructures

WSe2 2D P‐type Semiconductor‐based Electronic Devices for Information Technology: Design, Preparation, and Applications

P-N Conversion of Charge Carrier Types and High Photoresponsive Performance of Composition Modulated Ternary Alloy W(SxSe1-x)2 Field-Effect Transistors.

Low Resistance Ohmic Contact to P-type Monolayer WSe2

High-performance N-Type Transistors Based on CVD-grown Large-Domain Trilayer WSe2

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

Synthesis of Large-Size 1T ' ReS2xSe2(1-x) Alloy Monolayer with Tunable Bandgap and Carrier Type

High-Performance Bilayer WSe2 Pfet with Record Ids = 425 Μa/μm and Gm = 100 at Μs/μm Vds = -1 V by Direct Growth and Fabrication on SiO2 Substrate

Controllable Doping Characteristics for WSxSey Monolayers Based on the Tunable S/Se Ratio.

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts