Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Periodic Magnetic Domains in Single-Crystalline Cobalt Filament Arrays

Formation of Regular Magnetic Domains on Spontaneously Nanostructured Cobalt Filaments

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film.

Micromagnetic Configuration of Variable Nanostructured Cobalt Ferrite: Modulating and Simulations Toward Memory Devices.

Efficient Magnetic Domain Nucleation and Domain Wall Motion with Voltage Control Magnetic Anisotropy Effect and Antiferromagnetic/Ferromagnetic Coupling

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

Electrodeposition of Periodically Nanostructured Straight Cobalt Filament Arrays

Magnetic force microscopy of magnetic domain structure in highly ordered Co nanowire arrays

Magnetic domain structure in small diameter magnetic nanowire arrays

360° Domain Walls: Stability, Magnetic Field and Electric Current Effects

Nanoscale mechanics of antiferromagnetic domain walls

Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix

Magnetic Nanoislands in a Morphotropic Cobaltite Matrix

Nanoscopic spin-wave channeling along programmable magnetic domain walls in a CoFeB/BaTiO3 multiferroic heterostructure

Induced Formation of Structural Domain Walls and Their Confinement on Phase Dynamics in Strained Manganite Thin Films.

Domain structure in CoFeB thin films with perpendicular magnetic anisotropy

Current Polarity-Dependent Manipulation of Antiferromagnetic Domains

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

Vortical Structures for Nanomagnetic Memory Induced by Dipole-Dipole Interaction in Monolayer Disks