The Instability of S Vacancies in Cu2znsns4

Xiaoli Zhang,Miaomiao Han,Zhi Zeng,Hai Qing Lin

DOI: https://doi.org/10.1039/c5ra24585k

IF: 4.036

2016-01-01

RSC Advances

Abstract:The electronic structures of the possible charge states of vacancies in the earth-abundant solar cell absorber material Cu2ZnSnS4 (CZTS) are investigated using screened-exchange hybrid density functional theory.

What problem does this paper attempt to address?

Elucidating Structural Disorder and the Effects of Cu Vacancies on the Electronic Properties of Cu2ZnSnS4

Kuang Yu,Emily A. Carter

DOI: https://doi.org/10.1021/acs.chemmater.5b04351

IF: 10.508

2016-01-01

Chemistry of Materials

Abstract:Although a promising photovoltaic material that is inexpensive and easy to manufacture, Cu2ZnSnS4 (CZTS) suffers from a low open circuit voltage thought to be due to local potential fluctuations caused by a disordered Cu/Zn sublattice. The disordered character of CZTS is difficult to study experimentally and has been universally neglected in computational studies. Here, we develop a cluster expansion model that enables simulation of the order disorder phase transition in CZTS for the first time. With a proper atomic structure of the disordered phase in hand, we investigate the temperature-dependent voltage loss in CZTS, illustrating intrinsic limitations of existing synthesis methods and suggesting an optimal annealing temperature. We offer one explanation why Cu-poor CZTS is optimally efficient, as Cu vacancies increase the band gap via interactions between free carriers and the disordered nature of as-grown CZTS. Accordingly, increasing carrier concentrations may be an effective strategy to flatten the fluctuating potentials.
Electronic structures and optical properties of CuSCN with Cu vacancies

Wei Ji,Guo-Qing Yue,Fu-Shun Ke,Song Wu,Hai-Bin Zhao,Liang-Yao Chen,Song-You Wang,Yu Jia

DOI: https://doi.org/10.3938/jkps.60.1253

2012-01-01

Journal of the Korean Physical Society

Abstract:Based on density functional theory (DFT) within the generalized gradient approximation (GGA) using the CASTEP code, we calculated the formation energy of a Cu vacancy, as well as the band structure and the optical properties of β -CuSCN with Cu vacancies. Removal a Cu atom from the 32-site and the 72-site supercell results in an enlargement of the band-gap and a slight relaxation in the lattice parameter. An accepter level above the valence band maximum is observed in the 32-site supercell with a Cu vacancy, which results in the onset of a small absorption pre-peak at 0.65 eV.
Stability and Electronic Structure of Cu2znsns4 Surfaces: First-Principles Study

Peng Xu,Shiyou Chen,Bing Huang,H. J. Xiang,Xin-Gao Gong,Su-Huai Wei

DOI: https://doi.org/10.1103/physrevb.88.045427

IF: 3.7

2013-01-01

Physical Review B

Abstract:Currently little is known about the atomic and electronic structure of Cu2ZnSnS4 (CZTS) surfaces, although the efficiency of kesterite-based solar cells has been increased to over 11%. Through the first-principles calculations, we studied the possible surface structures of the frequently observed cation-terminated (112) and anion-terminated ((1) over bar(1) over bar(2) over bar) surfaces, and found that the polar surfaces are stabilized by the charge-compensating defects, such as vacancies (V-Cu, V-Zn), antisites (Zn-Cu, Zn-Sn, Sn-Zn), and defect clusters (Cu-Zn + Cu-Sn, 2Zn(Cu) + V-Sn). In stoichiometric single-phase CZTS samples, Cu-enriched defects are favored on (112) surfaces and Cu-depleted defects are favored on ((1) over bar(1) over bar(2) over bar) surfaces, while in non-stoichiometric samples grown under Cu poor and Zn rich conditions both surfaces favor the Cu-depleted defects, which explains the observed Cu deficiency on the surfaces of the synthesized CZTS thin films. The electronic structure analysis shows that Cu-enriched surfaces produce detrimental states in the band gap, while Cu-depleted surfaces produce no gap states and are thus benign to the solar cell performance. The calculated surface properties are consistent with experimental observation that Cu-poor and Zn-rich CZTS solar cells have higher efficiency.
A Strategy to Stabilize Kesterite Czts for High-Performance Solar Cells

Kuang Yu,Emily A. Carter

DOI: https://doi.org/10.1021/acs.chemmater.5b00172

IF: 10.508

2015-01-01

Chemistry of Materials

Abstract:Cu2ZnSnS4-xSex (CZTS) is an important semiconductor with significant potential for applications in the next generation of solar cells. CZTS has an optimal band gap (similar to 1.5 eV) and contains no expensive or toxic elements. However, CZTS-based solar cells suffer from low efficiency because of poor crystal quality, which is partly caused by secondary phase formation during synthesis. We use density functional theory+U calculations to systematically investigate the stabilities of three CZTS phases: kesterite, stannite, and wurtzite. In agreement with previous experiment and theory, we confirm that these three phases have very similar formation energies. This finding is consistent with the known difficulties in synthesizing pure kesterite CZTS, the phase that is desirable for photovoltaic applications. To overcome this problem, we characterize surfaces and interfaces of CZTS and are able to identify certain "beneficial surfaces" that could be exploited to potentially provide extra stability for the kesterite phase. We propose the zinc blende ZnS (001) surface as a substrate to induce formation of these beneficial surfaces and to stabilize the kesterite phase, thereby serving as an effective crystallization template for the fabrication of high-performance CZTS solar cells.
Crystal Structure and Defect Reactions in the Kesterite Solar Cell Absorber Cu[sub 2]znsns[sub 4] (CZTS): Theoretical Insights

Aron Walsh,Shiyou Chen,X. G. Gong,Su-Huai Wei

DOI: https://doi.org/10.1063/1.3666258

2011-01-01

Abstract:Cu2ZnSnS4 (CZTS) is one of the most promising quaternary absorber materials for thin-film solar cells. Light to electricity conversion efficiencies in CZTS devices have recently reached 9.6%, making it a competitive and more sustainable replacement for existing CdTe and Cu(In, Ga)Se-2 (CIGS) thin-film technologies. We review our recent insights into the structural, electronic and defect properties of this topical material. We have found that the stable crystal structure of CZTS is kesterite, which is derived from the ternary chalcopyrite structure. Examination of the thermodynamic stability of CZTS reveals that the stable chemical potential region for the formation of the stoichiometric compound is small. Under these conditions, the dominant defect will be p-type CuZ(n) antisite, which has an acceptor level deeper than the isolated Cu vacancy. The dominant self-compensated defect pair is [Cu-Zn+Zn-Cu], which leads to the formation of various polytype structures. We propose that to maximize the solar cell performance, growth of CZTS under Cu-poor/Zn-rich conditions will be optimal, if the precipitation of ZnS can be avoided. This theoretical guidance can provide new directions for improving the conversion efficiencies of kesterite based solar cells.
Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductorcu2znsns4

Aron Walsh

DOI: https://doi.org/10.1103/physrevb.81.245204

2010-01-01

Abstract:Current knowledge of the intrinsic defect properties of Cu2ZnSnS4 (CZTS) is limited, which is hindering further improvement of the performance of CZTS-based solar cells. Here, we have performed first-principles calculations for a series of intrinsic defects and defect complexes in CZTS, from which we have the following observations. (i) It is important to control the elemental chemical potentials during crystal growth to avoid the formation of secondary phases such as ZnS, CuS, and Cu2SnS3. (ii) The intrinsic p-type conductivity is attributed to the Cu-Zn antisite which has a lower formation energy and relatively deeper acceptor level compared to the Cu vacancy. (iii) The low formation energy of many of the acceptor defects will lead to the intrinsic p-type character, i.e., n-type doping is very difficult in this system. (iv) The role of electrically neutral defect complexes is predicted to be important, because they have remarkably low formation energies and electronically passivate deep levels in the band gap. For example, [Cu-Zn(-) + Zn-Cu(+)], [V-Cu(-) + Zn-Cu(+)], and [Zn-Sn(2-) + 2Zn(Cu)(+)] may form easily in nonstoichiometric samples. The band alignment between Cu2ZnSnS4, CuInSe2 and the solar-cell window layer CdS has also been calculated, revealing that a type-II band alignment exists for the CdS/Cu2ZnSnS4 heterojunction. The fundamental differences between CZTS and CuInSe2 for use in thin-film photovoltaics are discussed. The results are expected to be relevant to other I-2-II-IV-VI4 semiconductors.
Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Anne Marie Z. Tan,Christoph Freysoldt,Richard G. Hennig

DOI: https://doi.org/10.1103/PhysRevMaterials.4.064004

2020-04-08

Abstract:Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the potential of these materials for electronic devices requires a better understanding of how defects control the carrier concentration, character, and mobility. Utilizing a correction scheme developed by Freysoldt and Neugebauer to ensure the appropriate electrostatic boundary conditions for charged defects in 2D materials, we perform density functional theory calculations to compute formation energies and charge transition levels associated with sulfur vacancies in monolayer and layered bulk MoS$_2$. We investigate the convergence of these defect properties with respect to vacuum spacing, in-plane supercell dimensions, and different levels of theory. We also analyze the electronic structures of the defects in different charge states to gain insights into the effect of defects on bonding and magnetism. We predict that both vacancy structures undergo a Jahn-Teller distortion, which helps stabilize the sulfur vacancy in the $-1$ charged state.

Materials Science
Deep Electron Traps and Origin of P-Type Conductivity in the Earth-Abundant Solar-Cell Material Cu2znsns4

Dong Han,Y. Y. Sun,Junhyeok Bang,Y. Y. Zhang,Hong-Bo Sun,Xian-Bin Li,S. B. Zhang

DOI: https://doi.org/10.1103/physrevb.87.155206

IF: 3.7

2013-01-01

Physical Review B

Abstract:Using hybrid functional calculation, we identify the key intrinsic defects in Cu2ZnSnS4 (CZTS), an important earth-abundant solar-cellmaterial. The Sn-on-Zn antisite and the defect complex having three Cu atoms occupying a Sn vacancy are found to be the main deep electron traps. This result explains the optimal growth condition for CZTS, which is Cu poor and Zn rich, as found in several recent experiments. We show that, under the growth condition that minimizes the deep traps, Cu vacancy could contribute the majority of hole carriers, while the Cu-on-Zn antisite will become the dominant acceptor if the growth condition favors its formation. DOI: 10.1103/PhysRevB.87.155206
Ab initio thermodynamic model of Cu$_2$ZnSnS$_4$

Adam J. Jackson,Aron Walsh

DOI: https://doi.org/10.1039/C4TA00892H

2014-03-31

Abstract:Thin-film solar cells based on the semiconductor Cu$_2$ZnSnS$_4$ (CZTS) are a promising candidate for Terawatt-scale renewable energy generation. While CZTS is composed of earth abundant and non-toxic elements, arranged in the kesterite crystal structure, there is a synthetic challenge to produce high-quality stoichiometric materials over large areas. We calculate the thermodynamic potentials of CZTS and its elemental and binary components based on energetic and vibrational data computed using density functional theory. These chemical potentials are combined to produce a thermodynamic model for the stability of CZTS under arbitrary temperatures and pressures, which provide insights into the materials chemistry. CZTS was shown to be thermodynamically stable with respect to its component elements and their major binary phases binaries under modest partial pressure of sulfur and temperatures below 1100K. Under near-vacuum conditions with sulfur partial pressures below 1 Pa decomposition into binaries including solid SnS becomes favourable, with a strongly temperature-dependent stability window.

Materials Science
Electronic Instability of Kagome Metal CsV<sub>3</sub>Sb<sub>5</sub> in the 2 x 2 x 2 Charge Density Wave State

Hongen Zhu,Tongrui Li,Fanghang Yu,Yuliang Li,Sheng Wang,Yunbo Wu,Zhanfeng Liu,Zhengming Shang,Shengtao Cui,Yi Liu,Guobin Zhang,Lidong Zhang,Zhenyu Wang,Tao Wu,Jianjun Ying,Xianhui Chen,Zhe Sun

DOI: https://doi.org/10.1088/0256-307X/40/4/047301

2023-01-01

Chinese Physics Letters

Abstract:Recently discovered kagome metals AV(3)Sb(5) (A = K, Rb, and Cs) provide an ideal platform to study the correlation among nontrivial band topology, unconventional charge density wave (CDW), and superconductivity. The evolution of electronic structures associated with the change of lattice modulations is crucial for understanding of the CDW mechanism, with the combination of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory calculations, we investigate how band dispersions change with the increase of lattice distortions. In particular, we focus on the electronic states around M over bar z = 0 and k(z) = p/c in the normal states. When the electronic system enters into the CDW state, both van Hove singularities move down. Such novel properties are important for understanding of the CDW transition.
Electron Confinement in Hexagonal Vacancy Islands: Theory and Experiment

L. Niebergall,G. Rodary,H. F. Ding,D. Sander,V. S. Stepanyuk,P. Bruno,J. Kirschner

DOI: https://doi.org/10.1103/physrevb.74.195436

2006-01-01

Abstract:Electron confinement in hexagonal vacancy islands on Cu(111) is studied by state of the art ab initio calculations and experimentally by low-temperature scanning tunneling spectroscopy measurements (STS). Both theory and experiment reveal standing wave patterns of the local density of states (LDOS), which are ascribed to the scattering of surface-state electrons at the boundary of the vacancy island. The spatial modulation of the LDOS, its size, and energy dependence as measured by STS are well reproduced by our calculations. This agreement between theory and experiment corroborates the application of our theoretical approach to other confined systems, including spin-polarized effects. Our studies predict that quantum states of vacancy islands with magnetic adatoms can be used to tailor the spin-polarization of surface-state electrons on metal surfaces.
Mapping the Energetics of Defect States in Cu2ZnSnS4 films and the Impact of Sb Doping

Devendra Tiwari,Michael V Yakushev,Tristan Koehler,Mattia Cattelan,Neil Fox,Robert W Martin,Reiner Klenk,David J Férmin

DOI: https://doi.org/10.1021/acsaem.1c03729

2022-04-25

Abstract:The sub-bandgap levels associated with defect states in Cu2ZnSnS4 (CZTS) thin films are investigated by correlating the temperature dependence of the absorber photoluminescence (PL) with the device admittance spectroscopy. CZTS thin films are prepared by thermolysis of molecular precursors incorporating chloride salts of the cations and thiourea. Na and Sb are introduced as dopants in the precursor layers to assess their impact on Cu/Zn and Sn site disorder, respectively. Systematic analysis of PL spectra as a function of excitation power and temperature show that radiative recombination is dominated by quasi-donor-acceptor pairs (QDAP) with a maximum between 1.03 and 1.18 eV. It is noteworthy that Sb doping leads to a transition from localized to delocalized QDAP. The activation energies obtained associated with QDAP emission closely correlate with the activation energies of the admittance responses in a temperature range between 150 K and room temperature in films with or without added dopants. Admittance data of CZTS films with no added dopants also have a strong contribution from a deeper state associated with Sn disorder. The ensemble of PL and admittance data, in addition to energy-filtered photoemission of electron microscopy (EF-PEEM), shows a detailed picture of the distribution of sub-bandgap states in CZTS and the impact of doping on their energetics and device performance.
Cu-Zn Disorder in Stoichiometric and Non-Stoichiometric Cu2ZnSnS4/Cu2ZnSnSe4

Yi-Feng Zheng,Ji-Hui Yang,Xin-Gao Gong

DOI: https://doi.org/10.1063/1.5090804

IF: 1.697

2019-01-01

AIP Advances

Abstract:Cu-Zn disorder is unavoidable but plays an important role in high-efficiency Cu2ZnSnS4 and Cu2ZnSnSe4 solar cells. Using the cluster expansion method along with Monte Carlo (MC) simulations, we study the Cu-Zn disorder, considering cases both with and without vacancies. We find that the 2a, 2c, and 2d Wyckoff sites all show order-disorder transitions for both cases, in agreement with recent experiments supporting disorder at all 2a, 2c and 2d sites, but, in contrast to early experiments, supporting Cu-Zn disorder only at 2c and 2d sites. Below the transition temperature in non-stoichiometric cases, we find that excess Zn prefers to occupy 2c over 2a sites due to the greater similarity of 2c sites to 2d sites. Such site preferences indicate that Cu-Zn occupations exhibit some new kind of ordering rather than randomly distributed at 2a and 2c sites. We find that while Cu-Zn disorder reduces the band gap, the site preferences in non-stoichiometric samples increase the band gaps by suppressing Cu-Zn disorder. Generally, lowering annealing temperatures, while increasing Zn and vacancies, will lead to larger band gaps.
Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory

Johan Pohl,Thomas Unold,Karsten Albe

DOI: https://doi.org/10.48550/arXiv.1205.2556

2012-05-11

Abstract:Electronic structure calculations within screened-exchange hybrid density functional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 are localized hole traps, which can be attributed to the experimentally observed N2 level. In contrast, GaCu antisites and their defect complexes with copper vacancies exhibit an electron trap level, which can limit the open-circuit voltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys. Low-temperature photoluminescence measurements in CuGaSe2 thin-film solar cells show a free-to-bound transition at an energy of 1.48 eV, in very good agreement with the calculated transition energy for the GaCu antisite. Since the intrinsic DX center does not exhibit a pinning level within the band gap of CuInSe2, metastable DX behaviour can only be expected for GaCu antisites.

Materials Science
First-principles insights into the electronic structure, optical and band alignment properties of earth-abundant Cu2SrSnS4 solar absorber

Nelson Y Dzade

DOI: https://doi.org/10.1038/s41598-021-84037-8

2021-02-26

Abstract:Cu2SrSnS4 (CSTS) is a promising alternative candidate to Cu2ZnSnS4 (CZTS) for single- or multi-junction photovoltaics (PVs) owing to its efficient light-absorbing capability, earth-abundant, nontoxic constituents, and suitable defect properties. However, as a novel absorber material, several fundamental properties need to be characterized before further progress can be made in CSTS photovoltaics. In this letter, hybrid density functional theory (DFT) calculations have been used to comprehensively characterize for the first time, the electronic structure, band alignment, and optical properties of CSTS. It is demonstrated that CSTS possesses the ideal electronic structure (direct band gap of 1.98 eV and small photocarrier effective masses) and optical properties (high extinction coefficient and wide absorption) suitable for photovoltaic applications. Simulated X-ray photoelectron spectroscopy (XPS) valence band spectra using variable excitation energies show that Cu-3d electronic state dominates the valence band maximum of CSTS. Furthermore, the vacuum-aligned band diagram between CSTS and other common absorbers (CZTS, CIGS, CdTe) and the common n-type partner materials (CdS, ZnO) was constructed, which indicate staggered type-II band alignment at the CSTS/CdS and CSTS/ZnO interfaces. Based on these results, interface band offset engineering and alternative device architectures are suggested to improve charge carrier separation and power conversion efficiencies of CSTS.
Defect Physics Of The Kesterite Thin-Film Solar Cell Absorber Cu2znsns4

Shiyou Chen,Xingao Gong,Aron M. Walsh,Suhuai Wei

DOI: https://doi.org/10.1063/1.3275796

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Cu2ZnSnS4 is one of the most promising quaternary absorber materials for thin-film solar cells. Examination of the thermodynamic stability of this quaternary compound reveals that the stable chemical potential region for the formation of stoichiometric compound is small. Under these conditions, the dominant defect will be p-type Cu-Zn antisite, which has an acceptor level deeper than the Cu vacancy. The dominant self-compensated defect pair in this quaternary compound is [Cu-Zn(-)+Zn-Cu(+)](0), which leads to the formation of various polytype structures of Cu2ZnSnS4. We propose that to maximize the solar cell performance, growth of Cu2ZnSnS4 under Cu-poor/Zn-rich conditions will be optimal, if the precipitation of ZnS can be avoided by kinetic barriers.
Vacancy enhanced cation ordering enables >15% efficiency in Kesterite solar cells

Jinlin Wang,Licheng Lou,Kang Yin,Fanqi Meng,Xiao Xu,Menghan Jiao,Bowen Zhang,Jiangjian Shi,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng

2024-04-09

Abstract:Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and severe charge loss, while its regulation remains challenging due to the contradiction between disorder-order phase transition thermodynamics and atom-interchange kinetics. Herein, through introducing more vacancies in the CZTSSe surface, we explored a vacancy-assisted strategy to reduce the atom-interchange barrier limit to facilitate the Cu-Zn ordering kinetic process. The improvement in the Cu-Zn order degree has significantly reduced the charge loss in the device and helped us realize 15.4% (certified at 14.9%) and 13.5% efficiency (certified at 13.3%) in 0.27 cm2 and 1.1 cm2-area CZTSSe solar cells, respectively, thus bringing substantial advancement for emerging inorganic thin-film photovoltaics.

Materials Science,Applied Physics
Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In Operando X-ray Nanoprobe Studies

Chih-Yang Huang,Shao-Chin Tseng,Wei-Chao Chen,Gung-Chian Yin,Bo-Yi Chen,Kuei-Hsien Chen,Li-Chyong Chen,Cheng-Ying Chen

DOI: https://doi.org/10.1021/acsami.4c11127

IF: 9.5

2024-11-22

ACS Applied Materials & Interfaces

Abstract:The traditional sulfur selenization process in Cu(2)ZnSn(S,Se)(4) (CZTSSe) solar cell fabrication often results in the creation of localized anion vacancies (V(S) and V(Se)). These vacancies are considered harmful defects as they can trap carriers generated by light, leading to reduced solar cell efficiency. Moreover, concrete evidence has been lacking on the extent of the impact caused by these anion vacancies. Our research introduces a novel approach: the hydrogen-assisted selenization (HAS)...

materials science, multidisciplinary,nanoscience & nanotechnology
First-principles investigation of the structural, dynamical and dielectric properties of kesterite, stannite and PMCA phases of Cu2ZnSnS4

S. Poyyapakkam Ramkumar,Y. Gillet,A. Miglio,M.J. van Setten,X. Gonze,G.-M. Rignanese

DOI: https://doi.org/10.1103/PhysRevB.94.224302

2016-10-18

Abstract:Cu2ZnSnS4 (CZTS) is a promising material as an absorber in photovoltaic applications. The measured efficiency, however, is far from the theoretically predicted value for the known CZTS phases. To improve the understanding of this discrepancy we investigate the structural, dynamical, and dielectric of the three main phases of CZTS (kesterite, stannite, and PMCA) using density functional perturbation theory (DFPT). The effect of the exchange-correlation functional on the computed properties is analyzed. A qualitative agreement of the theoretical Raman spectrum with measurements is observed. However, none of the phases correspond to the experimental spectrum within the error bar that is usually to be expected for DFPT. This corroborates the need to consider cation disorder and other lattice defects extensively in this material.

Materials Science
Crystal And Electronic Band Structure Of Cu2znsnx4 (X=S And Se) Photovoltaic Absorbers: First-Principles Insights

Shiyou Chen,Xingao Gong,Aron M. Walsh,Suhuai Wei

DOI: https://doi.org/10.1063/1.3074499

IF: 4

2009-01-01

Applied Physics Letters

Abstract:The structural and electronic properties of Cu2ZnSnS4 and Cu2ZnSnSe4 are studied using first-principles calculations. We find that the low energy crystal structure obeys the octet rule and is the kesterite (KS) structure. However, the stannite or partially disordered KS structures can also exist in synthesized samples due to the small energy cost. We find that the dependence of the band structure on the (Cu,Zn) cation ordering is weak and predict that the band gap of Cu2ZnSnSe4 should be on the order of 1.0 eV and not 1.5 eV as was reported in previous absorption measurements.

The Instability of S Vacancies in Cu2znsns4

Elucidating Structural Disorder and the Effects of Cu Vacancies on the Electronic Properties of Cu2ZnSnS4

Electronic structures and optical properties of CuSCN with Cu vacancies

Stability and Electronic Structure of Cu2znsns4 Surfaces: First-Principles Study

A Strategy to Stabilize Kesterite Czts for High-Performance Solar Cells

Crystal Structure and Defect Reactions in the Kesterite Solar Cell Absorber Cu[sub 2]znsns[sub 4] (CZTS): Theoretical Insights

Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductorcu2znsns4

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Deep Electron Traps and Origin of P-Type Conductivity in the Earth-Abundant Solar-Cell Material Cu2znsns4

Ab initio thermodynamic model of Cu$_2$ZnSnS$_4$

Electronic Instability of Kagome Metal CsV<sub>3</sub>Sb<sub>5</sub> in the 2 x 2 x 2 Charge Density Wave State

Electron Confinement in Hexagonal Vacancy Islands: Theory and Experiment

Mapping the Energetics of Defect States in Cu2ZnSnS4 films and the Impact of Sb Doping

Cu-Zn Disorder in Stoichiometric and Non-Stoichiometric Cu2ZnSnS4/Cu2ZnSnSe4

Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory

First-principles insights into the electronic structure, optical and band alignment properties of earth-abundant Cu2SrSnS4 solar absorber

Defect Physics Of The Kesterite Thin-Film Solar Cell Absorber Cu2znsns4

Vacancy enhanced cation ordering enables >15% efficiency in Kesterite solar cells

Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In Operando X-ray Nanoprobe Studies

First-principles investigation of the structural, dynamical and dielectric properties of kesterite, stannite and PMCA phases of Cu2ZnSnS4

Crystal And Electronic Band Structure Of Cu2znsnx4 (X=S And Se) Photovoltaic Absorbers: First-Principles Insights