Abstract:We present the characterization of a readout Application-Specific Integrated Circuit (ASIC) for the CMS Endcap Timing Layer (ETL) of the High-Luminosity LHC upgrade with charge injection. The ASIC, named ETROC and developed in a 65 nm CMOS technology, reads out a 16× 16 pixel matrix of the Low-Gain Avalanche Detector (LGAD). The jitter contribution from ETROC is required to be below 40 ps to achieve the 50 ps overall time resolution per hit. The analog readout circuits in ETROC consist of the preamplifier and the discriminator. The preamplifier handles the LGAD charge signal with the most probable value of around 15 fC. The discriminator generates the digital pulse, which provides the Time-Of-Arrival (TOA, leading edge) and Time-Over-Threshold (TOT, pulse width) information. The prototype of ETROC (ETROC0) that implements a single channel of analog readout circuits has been evaluated with charge injection. The jitter of the analog readout circuits, measured from the discriminator's leading edge, is better than 16 ps for a charge larger than 15 fC with the sensor capacitance. The time walk resulting from different pulse heights can be corrected using the TOT measurement. The time resolution distribution has a standard deviation of 29 ps after the time-walk correction from the charge injection. At room temperature, the preamplifier's power consumption is measured to be 0.74 mW and 1.53 mW per pixel in the low- and high-power mode, respectively. The measured power consumption of the discriminator is 0.84 mW per pixel. With the ASIC alone or the LGAD sensor, The characterization performances fulfill the ETL's challenging requirements.

Characterization of the Column-Based Priority Logic Readout of Topmetal-II−CMOS Pixel Direct Charge Sensor

A Low-Noise CMOS Pixel Direct Charge Sensor, Topmetal-II-

A Low-Noise CMOS Pixel Direct Charge Sensor Topmetal-IIa for Low Background and Low Rate- Density Experiments

Development of a highly pixelated direct charge sensor, Topmetal-I, for ionizing radiation imaging

Topmetal-M: a Novel Pixel Sensor for Compact Tracking Applications

Design and Preliminary Characterization of a Novel Silicon Charge Sensor for the Gaseous Beam Monitor at the CSR External-Target Experiment

Pixelated CdZnTe detector based on Topmetal-IIa readout chip

A Highly Pixelated Cdznte Detector Based on Topmetal-Ii- Sensor

Performance of a novel charge sensor on the ion detection for the development of a high-pressure avalancheless ion TPC

Design and preliminary test results of the charge sensitive amplifier for gain-less charge readout in high-pressure TPC

50.3 ps time resolution and an 11-channel time measuring chip for Topmetal detectors

The Topmetal-CEE Prototype, a Direct Charge Sensor for the Beam Monitor of the CSR External-Target Experiment

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

CMOS MAPS with a Novel Readout Scheme for High Luminosity Particle Colliders

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

A highly pixelated CdZnTe detector based on \textit{Topmetal-${II}^-$} sensor

The Pixel Charging-up effect in Gas Micro-Pixel Detectors

Characterization of the CMS Endcap Timing Layer Readout Chip Prototype with Charge Injection

Characterization of the first prototype CMOS pixel sensor developed for the CEPC vertex detector

Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science

Test of Topmetal-II− in Liquid Nitrogen for Cryogenic Temperature TPCs