Abstract:We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective mass theory, the probability distributions of the band states in the [001]-oriented nanowires with a square cross section and the [111]-oriented nanowires with a hexagonal cross section show characteristic patterns with symmetries closely related to the irreducible representations of the relevant double point groups and, in general, go beyond the prediction of a simple one-band effective mass theory. We also investigate the effects of quantum confinement on the band structures of the [001]- and [111]-oriented InSb and GaSb nanowires and present an empirical formula for the description of quantization energies of the band edge states in the nanowires, which could be used to estimate the enhancement of the band gaps of the nanowires as a result of quantum confinement. The size dependencies of the electron and hole effective masses in these nanowires are also investigated and discussed.

Topological energy gaps in the [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

Extracting Band Structure Characteristics of GaSb/InAs Core-Shell Nanowires from Thermoelectric Properties

Manipulation of Band Structures in Wurtzite and Zinc-Blende GaAs/InAs-core-shell Nanowires

Electronic Structures of [001]- and [111]-Oriented Insb and Gasb Free-Standing Nanowires

Mapping of Electronic Band Gap along the Axis of Single InAs/InSbxAs1-x Heterostructured Nanowire

Tunable Transport Properties of Dual-Gated InAs/GaSb Core/shell Nanowires

Electronic Structures of [1 1 1]-Oriented Free-Standing InAs and InP Nanowires

The electronic structure and effective excitonic g factors of GaAs/GaMnAs core-shell nanowires

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

k.p theory of freestanding narrow band gap semiconductor nanowires

Gate Tunable Energy Gap and Negative Magnetoresistance of InAs/GaSb Core/shell Nanowires

Spin-orbit control of Dirac points and end states in inverted gap nanowires

Band Gap Modulation and Indirect to Direct Band Gap Transition in Zns/Si and Si/Zns Core/Shell Nanowires

Effects of surface modifications on band gaps and electronic states of GaN/InN core/shell nanowires

Spin-Resolved Magneto-Tunneling and Giant Anisotropic g -Factor in Broken Gap InAs-GaSb Core-Shell Nanowires

Electronic Structure of [100]-Oriented Free-Standing Inas and Inp Nanowires with Square and Rectangular Cross Sections

First-principles Study of InAs, InxGa1−xSb Nanotubes and InAs/InxGa1−xSb Nanotube Superlattices

Enhanced Efficiency of P-Type Doping by Band-Offset Effect in Wurtzite and Zinc-Blende GaAs/InAs-core-shell Nanowires

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Engineering the Effective P-Type Dopant in GaAs/InAs Core–Shell Nanowires with Surface Dangling Bonds