Atomic/molecular layer deposition mechanism of alucone organic–inorganic hybrid materials
Zhongchao Zhou,Xu Zhang,Rui Xu,Lina Xu,Yihong Ding,Hongping Xiao,Xinhua Li,Aidong Li,Guoyong Fang
DOI: https://doi.org/10.1016/j.mtcomm.2022.105061
IF: 3.8
2022-12-07
Materials Today Communications
Abstract:The atomic/molecular layer deposition (ALD/MLD) technique has been used to prepare various organic–inorganic hybrid materials, namely metalcones , such as lithicone, alucone, titanicone, hafnicone and vanadicone. These metalcones have been applied in the fields of microelectronics, energy and catalysis. In this work, the ALD/MLD mechanism of alucone was explored using density functional theory calculations. The results show that trimethylaluminum (TMA) can be easily adsorbed and dissociated on the hydroxylated SiO 2 surface. Three organic precursors, ethylene glycol (EG), ethylenediamine (EDA) and oxalic acid (OX) can react with the methylated surface through four-membered ring (4MR) and six-membered ring (6MR) pathways. The 6MR mode is favorable and can reduce the reaction barriers. The reactivity order is EG > OX > EDA. In the complementary reaction of alucone ALD/MLD, the reactivity order of TMA on EG-hydroxylated, EDA-aminated and OX-carboxylated surfaces is also in accordance with that of EG, EDA and OX on the methylated surfaces. These insights into the ALD/MLD mechanism of alucone can provide theoretical guidance for ALD/MLD design and growth of metalcone organic–inorganic hybrid materials.
materials science, multidisciplinary