Two-Dimensional Hydroxyl-Functionalized and Carbon-Deficient Scandium Carbide, ScC x OH, a Direct Band Gap Semiconductor.

Jie Zhou,Xian-Hu Zha,Melike Yildizhan,Per Eklund,Jianming Xue,Meiyong Liao,Per O Å Persson,Shiyu Du,Qing Huang
DOI: https://doi.org/10.1021/acsnano.8b06279
IF: 17.1
2019-01-01
ACS Nano
Abstract:Two-dimensional (2D) materials have attracted intensive attention in nanoscience and nanotechnology due to their outstanding properties. Among these materials, the emerging family of 2D transition metal carbides, carbonitrides, and nitrides (referred to as MXenes) stands out because of the vast available chemical space for tuning materials chemistry and surface termination, offering opportunities for property tailoring. Specifically, semiconducting properties are needed to enable utilization in optoelectronics, but direct bandgaps are experimentally challenging to achieve in these 2D carbides. Here, we demonstrate the fabrication of 2D hydroxyl-functionalized and carbon-deficient scandium carbide, namely ScCOH, by selective etching of a layered parent ScAlC compound. The 2D configuration is determined as a direct bandgap semiconductor, with an experimentally measured bandgap approximated to 2.5 eV. Furthermore, this ScCOH based device exhibits excellent photoresponse in the ultraviolet-visible light region (responsivity of 0.125 A/W @360 nm/10 V, and quantum efficiency of 43%). Thus, this 2D ScCOH direct-bandgap semiconductor may find applications in visible-light detectors, photocatalytic chemistry, and optoelectronic devices.
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