Two-dimensional aluminum phosphide semiconductor with tunable direct band gap for nanoelectric applications

Xuxin Yang,Caixia Mao,Yonghong Hu,Hui Cao,Yuping Zhang,Dong Zhao,Zhiyuan Chen,Meiqiu Xie
DOI: https://doi.org/10.1039/d0ra04424e
IF: 4.036
2020-01-01
RSC Advances
Abstract:More and more attractive applications of two-dimensional (2D) materials in nanoelectronic devices are being achieved successfully, which promotes the rapid and extensive development of new 2D materials.
chemistry, multidisciplinary
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