Abstract:Triangular-current-mode (TCM) modulation guarantees zero-voltage-switching across the mains cycle in AC-DC power converters, eliminating hard-switching with a minor ${\approx} {30}{\%}$ penalty in conduction losses over the conventional continuous current mode (CCM) modulation scheme. TCM-operated converters, however, include a wide variation in both switching frequency and switched current across the mains cycle, complicating an analytical description of the key operating parameters to date. In this work, we derive an analytical description for the semiconductor bridge-leg losses in a TCM AC-DC converter, including the rms current and/or conduction losses, switching frequency, and switching losses. For SiC mosfets, we introduce a new loss model for switching losses under zero-voltage-switching, which we call “residual ZVS losses”. These losses include the constant $C_\text{oss}$ losses found in previous literature but must also add, we find, turn-off losses that occur at high switched currents. The existence and modeling of these turn-off losses, which are due to currents flowing through the Miller capacitance and raise the inner gate source voltage to the threshold level and accordingly limit the voltage slew rate, are validated on the IMZA65R027M1H 650V SiC mosfet. The complete loss model – and the promise of TCM for high power density and high efficiency – is validated on a 2.2 kW hardware bridge-leg demonstrator, which achieves a peak 99.6$\%$ semiconductor efficiency at full load. The proposed, fully-analytical model predicts bridge-leg losses with only 12$\%$ deviation at the nominal load, accurately including residual ZVS losses across load, modulation index, and external gate resistance.

Improved Methodology for Estimating Switching Losses of Wide Band-Gap Semiconductors Using Gaussian Curve Fitting

Analytical Calculation of the Residual ZVS Losses of TCM-Operated Single-Phase PFC Rectifiers

Evaluation of Power Losses in Different CCM Mode Single-Phase Boost PFC Converters Via a Simulation Tool

A Simplification Method for Power Device Thermal Modeling with Quantitative Error Analysis

Statistics-based Switching Loss Characterization of Power Semiconductor Device

Improved Switching Loss Calculation in Neutral Point Clamped Inverter Via Waveforms Linearization

Switching loss analysis and modeling of power semiconductor devices base on an automatic measurement system

A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices

A Phased Calculation Method of Switching Loss of SiC MOSFET Based on High Power Conditions

Accurate conduction and switching loss models of IGBTs for resonant converter design

A Generic Power Loss Calculation Method for Fast Converter Performance Scanning

An Analytical Switching Process Model of Low-Voltage Egan HEMTs for Loss Calculation

Analytical Methodology for Loss Calculation of SiC MOSFETs

Application of Artificial Neural Network for Switching Loss Modeling in Power Igbts

Modeling of Conduction and Switching Losses for IGBT and FWD Based on SVPWM in Automobile Electric Drives

Switching losses analysis in MHz integrated synchronous Buck converter to support optimal power stage width segmentation in CMOS technology

Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit

A Unified Switch Loss Model and Design Consideration for Multilevel Boost PFC with GaN Devices

A Method Proposed for Calculating the Switching Loss of SiC MOSFET in Half Bridge Circuit

Current Collapse Conduction Losses Minimization in GaN Based PMSM Drive

Resolving Loss Discrepancy Between Calculation and Measurement in a 4.5 Kw GaN-based Inverter