Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on Β-Ga2o3 Single Crystals

Xuanhu Chen,Wenxiang Mu,Yang Xu,Bo Fu,Zhitai Jia,Fang-Fang Ren,Shulin Gu,Rong Zhang,Youdou Zheng,Xutang Tao,Jiandong Ye
DOI: https://doi.org/10.1021/acsami.8b19524
IF: 9.5
2019-01-01
ACS Applied Materials & Interfaces
Abstract:To suppress noise from full daylight background or environmental radiation, a spectrally selective solar-blind photodetector is widely required in many applications that need detection of light within a specific spectral range. Here, we present highly narrow-band solar-blind photodetectors by light polarization engineering of the anisotropic transitions in β-Ga2O3 single crystals. The polarized transmittance characteristics reveal that direct transitions from valance subbands to the conduction band minimum are tuned between 4.53 and 4.76 eV for the light polarized E// c and E// b. The polarization-dependent photoresponsivity verifies that the order of fundamental band-to-band transitions obeys well the selection rules in terms of the valence-band splitting in the β-Ga2O3 monoclinic crystal band structure. By combining an orthogonally aligned identical β-Ga2O3 (100) single crystal filter with a detector measured at a chopper frequency of 17 Hz, a highly narrow-band detection is produced with a peak responsivity of 0.23 A/W at 262 nm, an EQE of 110%, a bandwidth of 10 nm, a light rejection ratio over 800, and a response time of 0.86 ms. This provides a new paradigm for a narrow-band solar-blind photodetector with broad applications where background noise emission needs to be suppressed.
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