Switchable diode effect in oxygen vacancy-modulated SrTiO 3 single crystal

Xinqiang Pan,Yao Shuai,Chuangui Wu,Wenbo Luo,Xiangyu Sun,Huizhong Zeng,Xiaoyuan Bai,Chaoguan Gong,Ke Jian,Lu Zhang,Hongliang Guo,Benlang Tian,Wanli Zhang
DOI: https://doi.org/10.1007/s00339-017-1179-8
2017-01-01
Applied Physics A
Abstract:SrTiO 3 (STO) single crystal wafer was annealed in vacuum, and co-planar metal–insulator–metal structure of Pt/Ti/STO/Ti/Pt were formed by sputtering Pt/Ti electrodes onto the surface of STO after annealing. The forming-free resistive switching behavior with self-compliance property was observed in the sample. The sample showed switchable diode effect, which is explained by a simple model that redistribution of oxygen vacancies (OVs) under the external electric field results in the formation of n–n + junction or n + –n junction (n donated n-type semiconductor; n + donated heavily doped n-type semiconductor). The self-compliance property is also interpreted by the formation of n–n + /n + –n junction caused by the migration of the OVs under the electric field.
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