Abstract:We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on density functional theory. Depending on the concentration, the presence of these defects in LaAlO3 slab can suppress the surface conductivity. In contrast, in insulating SrTiO3 slabs already very small concentrations of oxygen vacancies or hydrogen dopant atoms induce a finite occupation of the conduction band. Surface defects in insulating LaAlO3/SrTiO3 heterostructure slabs with three LaAlO3 overlayers lead to the emergence of interface conductivity. Calculated defect formation energies reveal strong preference of hydrogen dopant atoms for surface sites for all structures and concentrations considered. Strong decrease of the defect formation energy of hydrogen adatoms with increasing thickness of the LaAlO3 overlayer and crossover from positive to negative values, taken together with the metallic conductivity induced by hydrogen adatoms, seamlessly explains the semiconductor-metal transition observed for these heterostructures as a function of the overlayer thickness. Moreover, we show that the potential drop and concomitant shift of (layer resolved) band edges is suppressed for the metallic configuration. Finally, magnetism with stable local moments, which form atomically thin magnetic layers at the interface, is generated by oxygen vacancies either at the surface or the interface, or by hydrogen atoms buried at the interface. In particular, oxygen vacancies in the TiO2 interface layer cause drastic downshift of the 3d e_g states of the Ti atoms neighboring the vacancies, giving rise to strongly localized magnetic moments, which add to the two-dimensional background magnetization.

Highly conductive two-dimensional electron gas at the interface of Al 2 O 3 /SrTiO 3

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Photoelectric properties of two-dimensional electron gas at the (Ga0.5Al0.5)2O3/SrTiO3 heterointerfaces

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

A Termination-Insensitive and Robust Electron Gas at the Heterointerface of Two Complex Oxides

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures

Chemistry and structure of homoepitaxial SrTiO$_3$ films and their influence on oxide-heterostructure interfaces

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Titanium D Xy Ferromagnetism at the LaAlO 3 / SrTiO 3 Interface

Hidden lattice instabilities as origin of the conductive interface between insulating LaAlO 3 and SrTiO 3

Oxygen vacancies and hydrogen doping in LaAlO3/SrTiO3 heterostructures: electronic properties and impact on surface and interface reconstruction

Hidden lattice instabilities as origin of the conductive interface between insulating LaAlO3 and SrTiO3

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.