Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe2
Kai-Qiang Lin,Chin Shen Ong,Sebastian Bange,Paulo E. Faria Junior,Bo Peng,Jonas D. Ziegler,Jonas Zipfel,Christian Bäuml,Nicola Paradiso,Kenji Watanabe,Takashi Taniguchi,Christoph Strunk,Bartomeu Monserrat,Jaroslav Fabian,Alexey Chernikov,Diana Y. Qiu,Steven G. Louie,John M. Lupton
DOI: https://doi.org/10.1038/s41467-021-25499-2
IF: 16.6
2021-09-17
Nature Communications
Abstract:Abstract Monolayer transition-metal dichalcogenides (TMDCs) show a wealth of exciton physics. Here, we report the existence of a new excitonic species, the high-lying exciton (HX), in single-layer WSe 2 with an energy of ~3.4 eV, almost twice the band-edge A-exciton energy, with a linewidth as narrow as 5.8 meV. The HX is populated through momentum-selective optical excitation in the K -valleys and is identified in upconverted photoluminescence (UPL) in the UV spectral region. Strong electron-phonon coupling results in a cascaded phonon progression with equidistant peaks in the luminescence spectrum, resolvable to ninth order. Ab initio GW -BSE calculations with full electron-hole correlations explain HX formation and unmask the admixture of upper conduction-band states to this complex many-body excitation. These calculations suggest that the HX is comprised of electrons of negative mass. The coincidence of such high-lying excitonic species at around twice the energy of band-edge excitons rationalizes the excitonic quantum-interference phenomenon recently discovered in optical second-harmonic generation (SHG) and explains the efficient Auger-like annihilation of band-edge excitons.
multidisciplinary sciences