Abstract:Two-dimensional intrinsic ferromagnets with high Curie temperature and large perpendicular magnetic anisotropy (PMA) are promising candidates for data storage and spintronics applications. In this work, first-principle calculations and Monte Carlo simulation are used to investigate the stability, electronic structure, and magnetic anisotropy of monolayers of CrSeX (X = Cl, Br, I). It is found that monolayer CrSeX (X = Cl, Br, I) species are two-dimensional intrinsic ferromagnets and are thermally stable at room temperature. It is worth noting that the Curie temperatures of monolayer CrSeX (X = Cl, Br, I) can reach or even exceed room temperature, and a strong PMA can be obtained in monolayer CrSeI. Interestingly, the PMA of monolayer CrSeI is mainly provided by the nonmetallic I atom with large spin–orbit coupling and magnetic anisotropy of the nonmetallic I atom reaching up to 0.572 meV/I atom, which is comparable to that of metallic Fe atoms at Fe/MgO interfaces. In contrast to monolayer CrSeI, monolayer CrSeCl and CrSeBr possess weak in-plane magnetic anisotropy, and their easily magnetized direction is the [100] axis. By analyzing the projected density of states and the p-orbital-resolved magnetic anisotropy energy of the nonmetallic I atom based on second-order perturbation theory, we find that the large PMA of monolayer CrSeI is mainly provided by the matrix element difference between the spin-up px and py states of the nonmetallic I atoms, and the difference between it and the matrix element difference between the spin-up py and pz states of the nonmetallic I atoms in the case of the magnetic moment aligning [100] and [010] axes is the reason why the energy of monolayer CrSeI for the magnetic moment aligning [100] axis is smaller than the energy for the magnetic moment aligning [010] axis. This study suggests that monolayer CrSeI is a promising candidate for future applications in spintronic devices.

Chromium Sulfide Halide Monolayers: Intrinsic Ferromagnetic Semiconductors with Large Spin Polarization and High Carrier Mobility.

Intrinsic Ferromagnetic Semiconductors in Two-Dimensional Alkali-Based Chromium Chalcogenides

A family of high-temperature ferromagnetic semiconducting monolayers: spin-dependent carrier mobility anisotropy and elliptic dichroism.

A Family of High-Temperature Ferromagnetic Semiconducting Monolayers: Spin-Dependent Carrier Mobility Anisotropy and Elliptic Dichroism

Magnetic Nanodevices and Spin-Transport Properties of a Two-Dimensional CrSCl Monolayer

Cr2XTe4 (X = Si, Ge) Monolayers: a New Type of Two-Dimensional High-T C Ising Ferromagnetic Semiconductors with a Large Magnetic Anisotropy

Hole-Doping-Induced Perpendicular Magnetic Anisotropy and High Curie Temperature in a CrSX (X = Cl, Br, I) Semiconductor Monolayer

Multiferroicity Driven by Single-Atom Adsorption on the Two-Dimensional Semiconductor ScCl3

First-principles Study the Single-Layer Transition Metal Trihalide CrXSe3 (X = Sn, Ge, Si) As Monolayer Ferromagnetic Semiconductor.

A Family of High-Temperature Ferromagnetic Monolayers with Locked Spin-Dichroism-mobility Anisotropy: MnNX and CrCX(X=Cl,Br,I;C=S,Se,Te)

Tunable Electrical Properties and Multiple-phases of Ferromagnetic GdS2, GdSe2 and Janus GdSSe Monolayers

Electronic properties of polymorphic two-dimensional layered chromium disulphide

Two-dimensional Cr 2 Cl 3 S 3 Janus Magnetic Semiconductor with large magnetic exchange interaction and high- T C

Prediction of Novel 2D Intrinsic Ferromagnetic Materials with High Curie Temperature and Large Perpendicular Magnetic Anisotropy

Large‐Spin‐Gap Nodal‐Line Half‐Metal and High‐Temperature Ferromagnetic Semiconductor in Cr2X3 (x=o,s,se) Monolayers

High Curie temperature and intrinsic ferromagnetic half-metallicity in two-dimensional Cr3X4 (X = S, Se, Te) nanosheets

High Curie-temperature Intrinsic Ferromagnetism and Hole Doping-Induced Half-Metallicity in Two-Dimensional Scandium Chlorine Monolayers

Spintronics: Large‐Spin‐Gap Nodal‐Line Half‐Metal and High‐Temperature Ferromagnetic Semiconductor in Cr2X3 (x=o,s,se) Monolayers (adv. Electron. Mater. 1/2020)

Bipolar Ferromagnetic Semiconductors and Doping-Tuned Room-Temperature Half-Metallicity in Monolayer MoX3 (X =cl, Br, I): an HSE06 Study

Two-dimensional Stable Fe-based Ferromagnetic Semiconductors: FeI3 and FeI1.5Cl1.5 Monolayers

Magnetic field modulated photoelectric devices in ferromagnetic semiconductor CrXh (X = S/Se, h = Cl/Br/I) van der Waals heterojunctions