High Brightness Fluorescent White Polymer Light-Emitting Diodes by Promoted Hole Injection via Reduced Barrier by Interfacial Dipole Imparted from Chlorinated Indium Tin Oxide to the Hole Injection Layer PEDOT:PSS.

Hong-Ren Syue,Miao-Ken Hung,Yao-Tang Chang,Ge-Wei Lin,Yu-Hsuan Lee,Show-An Chen
DOI: https://doi.org/10.1021/acsami.6b09515
IF: 9.5
2017-01-01
ACS Applied Materials & Interfaces
Abstract:We demonstrated that introducing poly(3,4-ethylenedioxythiophene) polystyrene sulfonate as a hole transport layer (HTL) on top of chlorinated indium tin oxide (Cl-ITO) anode can lead to a deeper highest occupied molecular orbital level of the HTL (promoting from 5.22 to 5.42 eV) due to the interfacial dipole imparted by the Cl-ITO, which allows barrier-free hole injection to the emitting layer with polyspirobifluorene doped with the yellow emitter rubrene and significantly prevents excitons quenching by residual chlorine radicals on the surface of Cl-ITO. By use of poly[9,9-bis(6'-(18-crown-6)methoxy)hexyl)fluorene] chelating to potassium ion (PFCn6:K) as electron injection layer and air-stable high work function (E) metal aluminum as the cathode, the performance of fluorescent white polymer light-emitting diode (WPLED) achieves the high maximum brightness (B) of 61 523 cd/m and maximum luminance efficiency (η, ) of 10.3 cd/A. Replacing PFCn6:K/Al cathode by CsF/Al, the B and η, are promoted to 87 615 cd/m (the record value in WPLED) and 11.1 cd/A, respectively.
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