Orientation Dependent Interlayer Stacking Structure in Bilayer Mos2 Domains

Shanshan Wang,Hidetaka Sawada,Christopher S. Allen,Angus I. Kirkland,Jamie H. Warner

DOI: https://doi.org/10.1039/c7nr03198j

IF: 6.7

2017-01-01

Nanoscale

Abstract:We have studied the atomic structure of small secondary domains that nucleate on monolayer MoS2grown by chemical vapour deposition (CVD), which form the basis of bilayer MoS2.

What problem does this paper attempt to address?

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Chendong Zhang,Chih-Piao Chuu,Xibiao Ren,Ming-Yang Li,Lain-Jong Li,Chuanhong Jin,Mei-Yin Chou,Chih-Kang Shih

DOI: https://doi.org/10.1126/sciadv.1601459

IF: 13.6

2017-01-01

Science Advances

Abstract:By using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry. We quantitatively determine the influence of interlayer coupling on the electronic structure of the hetero-bilayer at different critical points. We show that the direct gap semiconductor concept is retained in the bilayer although the valence and conduction band edges are located at different layers. We further show that the local bandgap is periodically modulated in the X-Y direction with an amplitude of ~0.15 eV, leading to the formation of a two-dimensional electronic superlattice.
Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

qi zhang,xu xiao,ruiqi zhao,danhui lv,guanchen xu,zhixing lu,lifei sun,shizhe lin,xiang gao,jun zhou,chuanhong jin,feng ding,l jiao

DOI: https://doi.org/10.1002/anie.201502461

2015-01-01

Angewandte Chemie

Abstract:Controlled stacking of different two-dimensional (2D) atomic layers will greatly expand the family of 2D materials and broaden their applications. A novel approach for synthesizing MoS2/WS2 heterostructures by chemical vapor deposition has been developed. The successful synthesis of pristine MoS2/WS2 heterostructures is attributed to using core-shell WO3-x/MoO3-x nanowires as a precursor, which naturally ensures the sequential growth of MoS2 and WS2. The obtained heterostructures exhibited high crystallinity, strong interlayer interaction, and high mobility, suggesting their promising applications in nanoelectronics. The stacking orientations of the two layers were also explored from both experimental and theoretical aspects. It is elucidated that the rational design of precursors can accurately control the growth of high-quality 2D heterostructures. Moreover, this simple approach opens up a new way for creating various novel 2D heterostructures by using a large variety of heteronanomaterials as precursors.
Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Chendong Zhang,Chih-Piao Chuu,Xibiao Ren,Ming-Yang Li,Lain-Jong Li,Chuanhong Jin,Mei-Yin Chou,Chih-Kang Shih

DOI: https://doi.org/10.1126/sciadv.1601459

IF: 13.6

2017-01-01

Science Advances

Abstract:A periodic modulation of the local bandgap in the rotationally aligned MoS 2 /WSe 2 bilayer creates a 2D electronic superlattice.
Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Ziheng Ji,Hao Hong,Jin Zhang,Qi Zhang,Wei Huang,Ting Cao,Ruixi Qiao,Can Liu,Jing Liang,Chuanhong Jin,Liying Jiao,Kebin Shi,Sheng Meng,Kaihui Liu

DOI: https://doi.org/10.1021/acsnano.7b04541

IF: 17.1

2017-01-01

ACS Nano

Abstract:Van der Waals-coupled two-dimensional (2D) heterostructures have attracted great attention recently due to their high potential in the next-generation photodetectors and solar cells. The understanding of charge-transfer process between adjacent atomic layers is the key to design optimal devices as it directly determines the fundamental response speed and photon-electron conversion efficiency. However, general belief and theoretical studies have shown that the charge transfer behavior depends sensitively on interlayer configurations, which is difficult to control accurately, bringing great uncertainties in device designing. Here we investigate the ultrafast dynamics of interlayer charge transfer in a prototype heterostructure, the MoS2/WS2 bilayer with various stacking configurations, by optical two-color ultrafast pump-probe spectroscopy. Surprisingly, we found that the charge transfer is robust against varying interlayer twist angles and interlayer coupling strength, in time scale of ∼90 fs. Our observation, together with atomic-resolved transmission electron characterization and time-dependent density functional theory simulations, reveals that the robust ultrafast charge transfer is attributed to the heterogeneous interlayer stretching/sliding, which provides additional channels for efficient charge transfer previously unknown. Our results elucidate the origin of transfer rate robustness against interlayer stacking configurations in optical devices based on 2D heterostructures, facilitating their applications in ultrafast and high-efficient optoelectronic and photovoltaic devices in the near future.
Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Jiadong Zhou,Bijun Tang,Junhao Lin,Danhui Lv,Jia Shi,Linfeng Sun,Qingsheng Zeng,Lin Niu,Fucai Liu,Xiaowei Wang,Xinfeng Liu,Kazu Suenaga,Chuanhong Jin,Zheng Liu

DOI: https://doi.org/10.1002/adfm.201801568

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS2‐WS2, MoS2‐MoSe2, MoS2‐WSe2, and WSe2‐WS2, are synthesized so far via chemical vapor deposition (CVD) method. Engineering the morphology of domains including size and shape, however, still remains challenging. Here, a one‐step CVD strategy on the morphology engineering of MoS2 and WS2 domains within the monolayer MoS2‐WS2 lateral heterostructures through controlling the weight ratio of precursors, MoO3 and WO3, as well as tuning the reaction temperature is reported. Not only can the size ratio in terms of area between WS2 and MoS2 domains be easily controlled from less than 1 to more than 20, but also the overall heterostructure size can be tuned from several to hundreds of micrometers. Intriguingly, the quantum well structure, a WS2 stripe embedded in the MoS2 matrix, is also observed in the as‐synthesized heterostructures, offering opportunities to study quantum confinement effects and quantum well applications. This approach paves the way for the large‐scale fabrication of MoS2‐WS2 lateral heterostructures with controllable domain morphology, and shall be readily extended to morphology engineering of other TMD heterostructures.
Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Zhepeng Zhang,Xujing Ji,Jianping Shi,Xiebo Zhou,Shuai Zhang,Yue Hou,Yue Qi,Qiyi Fang,Qingqing Ji,Yu Zhang,Min Hong,Pengfei Yang,Xinfeng Liu,Qing Zhang,Lei Liao,Chuanhong Jin,Zhongfan Liu,Yanfeng Zhang

DOI: https://doi.org/10.1021/acsnano.7b01537

IF: 17.1

2017-01-01

ACS Nano

Abstract:Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks are usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating the direct growth of monolayer h-BN on Au foil with the subsequent growth of MoS2. In such vertical stacks, the interactions between MoS2 and Au are diminished by the intervening h-BN layer, as evidenced by the appearance of photoluminescence in MoS2. The weakened interfacial interactions facilitate the transfer of the MoS2/h-BN stacks from Au to arbitrary substrates by an electrochemical bubbling method. Scanning tunneling microscope/spectroscopy characterization shows that the central h-BN layer partially blocks the metal-induced gap states in MoS2/h-BN/Au ...
Stacking Stability of MoS 2 Bilayer: an Ab Initio Study

Tao Peng,Guo Huai-Hong,Yang Teng,Zhang Zhi-Dong

DOI: https://doi.org/10.1088/1674-1056/23/10/106801

2014-01-01

Chinese Physics B

Abstract:The study of the stacking stability of bilayer MoS2 is essential since a bilayer has exhibited advantages over single layer MoS2 in many aspects for nanoelectronic applications. We explored the relative stability, optimal sliding path between different stacking orders of bilayer MoS2, and (especially) the effect of inter-layer stress, by combining first-principles density functional total energy calculations and the climbing-image nudge-elastic-band (CI-NEB) method. Among five typical stacking orders, which can be categorized into two kinds (I: AA, AB and II: AA', AB', A'B), we found that stacking orders with Mo and S superposing from both layers, such as AA' and AB, is more stable than the others. With smaller computational efforts than potential energy profile searching, we can study the effect of inter-layer stress on the stacking stability. Under isobaric condition, the sliding barrier increases by a few eV/(uc.GPa) from AA' to AB', compared to 0.1 eV/(uc.GPa) from AB to [AB]. Moreover, we found that interlayer compressive stress can help enhance the transport properties of AA'. This study can help understand why inter-layer stress by dielectric gating materials can be an effective means to improving MoS2 on nanoelectronic applications.
Interlayer Coupling Dependent Discrete H → T′ Phase Transition in Lithium Intercalated Bilayer Molybdenum Disulfide

Xujing Ji,Degong Ding,Xiaoxiao Guan,Chunyang Wu,Haofu Qian,Juexian Cao,Jixue Li,Chuanhong Jin

DOI: https://doi.org/10.1021/acsnano.1c05332

IF: 17.1

2021-01-01

ACS Nano

Abstract:In this work, the interlayer coupling dependent lithium intercalation induced phase transition in bilayer MoS2 (BL-MoS2) was investigated using an atomic-resolution annual dark-field scanning transmission electron microscope (ADF-STEM). It was revealed that the lithiation induced H -> T' phase transition in BL-MoS2 strongly depended on the interlayer twist angle; i.e., the H -> T' phase transition occurred in well-stacked H phase BL-MoS2 (with a twist angle of theta(t) = 0 degrees) but not for theta(t) not equal 0 degrees BL-MoS2. The lithiated BL-MoS2 appeared in homophase stacking, either T'/T' or H/H (locally, no phase transformation) stacking, without any heterophase stacking such as H/T' or T'/H observed. This finding indicated the H -> T' phase transition occurred via a domain-by-domain mode rather than layer-by-layer. Up to 15 types of stacking orders were experimentally identified locally in lithiated bilayer T'-MoS2, and the formation mechanism was attributed to the discrete interlayer translation with a unit step of (m/6a, n/6b) (m, n = 0, 1, 2, 3), where a and b were the primitive lattice vectors of T'-MoS2. Our experimental results were further corroborated by ab initio density functional theory (DFT) calculations, where the occurrence of different stacking orders can be quantitatively correlated with the variation of intercalated lithium contents into the BL-MoS2. The present study aids in the understanding of the phase transition mechanisms in atomically thin 2D transition metal dichalcogenides (TMDCs) and will also shed light on the precisely controlled phase engineering of 2D materials for memory applications.
Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides

V.V. Enaldiev,V. Zólyomi,C. Yelgel,S.J. Magorrian,V.I. Fal'ko

DOI: https://doi.org/10.1103/PhysRevLett.124.206101

2020-04-05

Abstract:We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $\theta^{\circ}<\theta^{\circ}_P\sim 2.5^{\circ}$ and $\theta^{\circ}<\theta^{\circ}_{AP}\sim 1^{\circ}$ for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P- and AP-bilayers.

Mesoscale and Nanoscale Physics
Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2.

Jinhua Hong,Cong Wang,Hongjun Liu,Xibiao Ren,Jinglei Chen,Guanyong Wang,Jinfeng Jia,Maohai Xie,Chuanhong Jin,Wei Ji,Jun Yuan,Ze Zhang

DOI: https://doi.org/10.1021/acs.nanolett.7b02600

IF: 10.8

2017-01-01

Nano Letters

Abstract:Interlayer rotation and stacking were recently demonstrated as effective strategies for tuning physical properties of various two-dimensional materials. The latter strategy was mostly realized in heterostructures with continuously varied stacking orders, which obscure the revelation of the intrinsic role of a certain stacking order in its physical properties. Here, we introduce inversion-domain-boundaries into molecular-beam-epitaxy grown MoSe2 homobilayers, which induce uncommon fractional lattice translations to their surrounding domains, accounting for the observed diversity of large-area and uniform stacking sequences. Low-symmetry stacking orders were observed using scanning transmission electron microscopy and detailed geometries were identified by density functional theory. A linear relation was also revealed between interlayer distance and stacking energy. These stacking sequences yield various energy alignments between the valence states at the Γ and K points of the Brillouin zone, showing stacking-dependent bandgaps and valence band tail states in the measured scanning tunneling spectroscopy. These results may benefit the design of two-dimensional multilayers with manipulable stacking orders.
Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures

Jing Zhang,Jinhuan Wang,Peng Chen,Yue Sun,Shuang Wu,Zhiyan Jia,Xiaobo Lu,Hua Yu,Wei Chen,Jianqi Zhu,Guibai Xie,Rong Yang,Dongxia Shi,Xiulai Xu,Jianyong Xiang,Kaihui Liu,Guangyu Zhang

DOI: https://doi.org/10.1002/adma.201504631

IF: 29.4

2015-01-01

Advanced Materials

Abstract:Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive fingerprints for interfacial quality and stacking configurations.
Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Jing Liang,Dongyang Yang,Jingda Wu,Jerry I. Dadap,Kenji Watanabe,Takashi Taniguchi,Ziliang Ye

DOI: https://doi.org/10.1103/physrevx.12.041005

2022-01-01

Physical Review X

Abstract:The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer coupling modulation due to the moire ' superlattice may endow exotic physical phenomena, such as moire ' excitons and correlated electronic phases. To gain insight into these new phenomena, it is crucial to unveil the underlying coupling between atomic layers. Recently, the rhombohedral-stacked transition metal dichalcogenide (TMD) bilayer has attracted significant interest because of the emergence of an out-of-plane polarization from nonferroelectric monolayer constituents. However, as a key parameter responsible for the physical properties, the interlayer coupling and its relationship with ferroelectricity remain elusive. Here, we probe the asymmetric interlayer coupling between the conduction band of one layer and the valence band from the other layer in a 3R-MoS2 bilayer, which can be understood as a result of a layer-dependent Berry phase winding. By performing optical spectroscopy in a dual-gated device, we show an effective type-II band alignment exists at K points in the 3R-MoS2 bilayer. Furthermore, by unraveling various contributions to the band offset, we quantitatively determine the asymmetric interlayer coupling and spontaneous polarization in 3R-MoS2. Our results unveil the physical nature of stacking-induced ferroelectricity in TMD homostructures and have important implications for moire ' physics in 2D semiconductors.
Evolution of interlayer coupling in twisted molybdenum disulfide bilayers

Kaihui Liu,Liming Zhang,Ting Cao,Chenhao Jin,Diana Qiu,Qin Zhou,Alex Zettl,Peidong Yang,Steve G. Louie,Feng Wang

DOI: https://doi.org/10.1038/ncomms5966

IF: 16.6

2014-01-01

Nature Communications

Abstract:Van der Waals coupling is emerging as a powerful method to engineer physical properties of atomically thin two-dimensional materials. In coupled graphene–graphene and graphene–boron nitride layers, interesting physical phenomena ranging from Fermi velocity renormalization to Hofstadter’s butterfly pattern have been demonstrated. Atomically thin transition metal dichalcogenides, another family of two-dimensional-layered semiconductors, can show distinct coupling phenomena. Here we demonstrate the evolution of interlayer coupling with twist angles in as-grown molybdenum disulfide bilayers. We find that the indirect bandgap size varies appreciably with the stacking configuration: it shows the largest redshift for AA- and AB-stacked bilayers, and a significantly smaller but constant redshift for all other twist angles. Our observations, together with ab initio calculations, reveal that this evolution of interlayer coupling originates from the repulsive steric effects that leads to different interlayer separations between the two molybdenum disulfide layers in different stacking configurations.
Valley and band structure engineering of folded MoS 2 bilayers

Tao Jiang,Hengrui Liu,Di Huang,Shuai Zhang,Yingguo Li,Xingao Gong,Yuen-Ron Shen,Wei-Tao Liu,Shiwei Wu

DOI: https://doi.org/10.1038/nnano.2014.176

IF: 38.3

2014-01-01

Nature Nanotechnology

Abstract:Folding MoS 2 monolayers to obtain bilayers with different stacking orders results in enhanced valley- and spin-polarizations compared with natural Bernal-stacked bilayers.
Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist.

Arend M van der Zande,arend m van der zande,Alexey Chernikov,Daniel A Chenet,YuMeng You,XiaoXiao Zhang,Pinshane Y Huang,Timothy C Berkelbach,Lei Wang,Fan Zhang,Mark S Hybertsen,David A Muller,David R Reichman,Tony F Heinz,James C Hone

DOI: https://doi.org/10.1021/nl501077m

IF: 10.8

2014-01-01

Nano Letters

Abstract:Molybdenum disulfide bilayers with well-defined interlayer twist angle were constructed by stacking single-crystal monolayers. Varying interlayer twist angle results in strong tuning of the indirect optical transition energy and second-harmonic generation and weak tuning of direct optical transition energies and Raman mode frequencies. Electronic structure calculations show the interlayer separation changes with twist due to repulsion between sulfur atoms, resulting in shifts of the indirect optical transition energies. These results show that interlayer alignment is a crucial variable in tailoring the properties of two-dimensional heterostructures.
Stacking change in MoS$_{2}$ bilayers induced by interstitial Mo impurities

Natalia Cortés,L. Rosales,P.A. Orellana,A. Ayuela,J. W. González

DOI: https://doi.org/10.48550/arXiv.1710.00049

2017-09-23

Abstract:We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS$_{2}$ bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB (doped). The occurrence of Mo impurities in different positions shows their split electronic levels in the energy gap, following octahedral and tetrahedral crystal fields. The energy stability is related to the accommodation of Mo impurities compacted in hollow sites between layers. Other less stable configurations for Mo dopants have larger interlayer distances and band gaps than those for the most stable stacking. Our findings suggest possible applications such as exciton trapping in layers around impurities, and the control of bilayer stacking by Mo impurities in the growth process.

Materials Science,Mesoscale and Nanoscale Physics
Effect of Substrate Symmetry on the Orientations of MoS2 Monolayers.

Shuangyuan Pan,Pengfei Yang,Lijie Zhu,Min Hong,Chunyu Xie,Fan Zhou,Yuping Shi,Yahuan Huan,Fangfang Cui,Yanfeng Zhang

DOI: https://doi.org/10.1088/1361-6528/abc566

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are promising platforms for developing next-generation electronic and optoelectronic devices due to their unique properties. To achieve this, the growth of large single-crystal TMDs is a critical issue. Unraveling the factors affecting the nucleation and domain orientation should hold fundamental significance. Herein, we design the chemical vapor deposition growth of monolayer MoS2 triangles on Au(111) and Au(100) facets, for exploring the substrate facet effects on the domain orientations. According to multi-scale characterizations, we find that, the obtained triangular MoS2 domains present two preferential orientations on the six-fold symmetric Au(111) facet, whereas four predominant orientations on the four-fold symmetric Au(100) facet. Using on-site scanning tunneling microscopy, we further reveal the preferred alignments of monolayer MoS2 triangles along the close-packed directions of both Au(111) and Au(100) facets. Moreover, bunched substrate steps are also found to form along the close-packed directions of the crystal facets, which guides the preferential nucleation of monolayer MoS2 along the step edges. This work should hereby deepen the understanding of the substrate facet/step effect on the nucleation and orientation of monolayer MoS2 domains, thus providing fundamental insights into the controllable syntheses of large single-crystal TMD monolayers.
Moire Potential, Lattice Relaxation and Layer Polarization in Marginally Twisted MoS2 Bilayers

Nikhil Tilak,Guohong Li,Takashi Taniguchi,Kenji Watanabe,Eva Y. Andrei

DOI: https://doi.org/10.1021/acs.nanolett.2c03676

2022-10-16

Abstract:Artificially twisted heterostructures of semiconducting transition metal dichalcogenides (TMDs) offer unprecedented control over their electronic and optical properties via the spatial modulation of interlayer interactions and structural reconstruction. Here we study twisted MoS2 bilayers in a wide range of twist angles near 0° using Scanning Tunneling Microscopy/Spectroscopy. We investigate the twist angle-dependence of the moiré pattern which is dominated by lattice reconstruction for small angles (<2°) leading to large triangular domains with rhombohedral stacking. Local spectroscopy measurements reveal a large moiré-potential strength of 100-200 meV for angles <3°. In reconstructed regions we see a bias-dependent asymmetry between neighboring triangular domains which we relate to the vertical polarization which is intrinsic to rhombohedral stacked TMDs. This viewpoint is urther supported by spectroscopy maps and ambient Piezoresponse measurements. Our results provide a microscopic perspective on this new class of interfacial ferroelectrics and can offer clues for designing novel heterostructures which harness this effect.

Materials Science,Mesoscale and Nanoscale Physics
Three-dimensional assembly of single-layered Mos2

Pengpeng Wang,Hongyu Sun,Yongjun Ji,Wenhai Li,Xun Wang

DOI: https://doi.org/10.1002/adma.201304120

IF: 29.4

2014-01-01

Advanced Materials

Abstract:Assembly of single layers: Three-dimensional assembly of single-layered MoS2 is achieved on a large scale via a solution method. The as-prepared tubular architectures have tunable size and mesopores in the shell, which are desirable for applications. As a example, they exhibit excellent lithium storage properties and are highly active for hydrodesulfurization of thiophene resulting from their structural advantages. ? 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2

Fan Zhang,Zhixing Lu,Yichul Choi,Haining Liu,Husong Zheng,Liming Xie,Kyungwha Park,Liying Jiao,Chenggang Tao

DOI: https://doi.org/10.1021/acsanm.8b00385

IF: 6.14

2018-01-01

ACS Applied Nano Materials

Abstract:van der Waals (vdW) heterostructures synthesized through the chemical vapor deposition (CVD) method allow the creation and tuning of intriguing electronic and optical properties of two-dimensional (2D) materials. Especially, local structures in the heterostructures, such as interfaces, edges, and point defects, are critical for their wide range of potential applications. However, up to now atomic-scale measurements of local structures in as-grown 2D heterostructures on insulating substrates are still rare. Here we report our scanning tunneling microscopy and spectroscopy (STM/STS) study of as-grown MoS2 monolayer and WS2/MoS2 heterobilayer on SiO2. The heterobilayer appears smoother than the MoS2 monolayer, with a root-mean-square roughness of 0.230 nm in the former and 0.329 nm in the latter. For the first time, to our knowledge, we directly observed a novel type of continuous interface between the MoS2 monolayer and the top layer of the heterobilayer with atomic resolution. Our STS results and density functional theory calculations revealed the band gaps of the heterobilayer and the MoS2 monolayer. The finding of the continuous interfaces and the systematic characterizations could have significant impacts on the optimization and design of new 2D heterostructures.

Orientation Dependent Interlayer Stacking Structure in Bilayer Mos2 Domains

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Stacking Stability of MoS 2 Bilayer: an Ab Initio Study

Interlayer Coupling Dependent Discrete H → T′ Phase Transition in Lithium Intercalated Bilayer Molybdenum Disulfide

Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides

Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2.

Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers

Valley and band structure engineering of folded MoS 2 bilayers

Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist.

Stacking change in MoS$_{2}$ bilayers induced by interstitial Mo impurities

Effect of Substrate Symmetry on the Orientations of MoS2 Monolayers.

Moire Potential, Lattice Relaxation and Layer Polarization in Marginally Twisted MoS2 Bilayers

Three-dimensional assembly of single-layered Mos2

Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2