Valley and band structure engineering of folded MoS 2 bilayers

Tao Jiang,Hengrui Liu,Di Huang,Shuai Zhang,Yingguo Li,Xingao Gong,Yuen-Ron Shen,Wei-Tao Liu,Shiwei Wu

DOI: https://doi.org/10.1038/nnano.2014.176

IF: 38.3

2014-01-01

Nature Nanotechnology

Abstract:Folding MoS 2 monolayers to obtain bilayers with different stacking orders results in enhanced valley- and spin-polarizations compared with natural Bernal-stacked bilayers.

What problem does this paper attempt to address?

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Xingli Zhang,Jun Zhou,Shi-Qi Li,Yuanye Wang,Shiping Zhang,Yalin Liu,Junfeng Gao,Jijun Zhao,Weipeng Wang,Richeng Yu,Weifeng Zhang,Nan Liu,Jiacai Nie,Lin He,Ruifen Dou

DOI: https://doi.org/10.1021/acs.jpclett.1c01578

2021-07-01

Abstract:In two-dimensional transitional metal dichalcogenides, tuning the spin-valley-layer coupling via changing layer numbers and stacking orders remains desirable for their application in valleytronics. Herein, six-point star-like MoSe2 nanoflakes simultaneously containing different atom registration regions from monolayer to bilayer with 2H and 3R stacking order were fabricated, and the valley polarizations were comparably investigated by circular polarized photoluminescent spectroscopy. The degree of valley polarization was detected to be about 12.5% in the monolayer and 10% in the 2H bilayer, but greatly upgraded to about 40% in the 3R bilayer MoSe2. This enhancement was attributed to the multiband spin splitting and generation of spin-dependent layer polarization for the 3R MoSe2 bilayer, which is well evidenced by our ab initio calculations of the energy band structures. Our results demonstrate that preparing TMD crystals with controllable stacking orders and interlayer coupling is a promising route to tune the valley index in TMDs for developing valleytronics technology.
Valley polarization in stacked MoS2 induced by circularly polarized light

Juan Xia,Xingli Wang,Beng Kang Tay,Shoushun Chen,Zheng Liu,Jiaxu Yan,Zexiang Shen

DOI: https://doi.org/10.1007/s12274-016-1329-x

IF: 9.9

2016-11-12

Nano Research

Abstract:Manipulation of valley pseudospins is crucial for future valleytronics. The emerging transition metal dichalcogenides (TMDs) provide new possibilities for exploring the interplay among the quantum degrees of freedom, including real spin, valley pseudospin, and layer pseudospin. For example, spin–valley coupling results in valley-dependent circular dichroism in which electrons with particular spin (up or down) can be selectively excited by chiral optical pumping in monolayer TMDs, whereas in few-layer TMDs, the interlayer hopping further affects the spin–valley coupling. In addition to valley and layer pseudospins, here we propose a new degree of freedom—stacking pseudospin—and demonstrate new phenomena correlated to this new stacking freedom that otherwise require the application of external electrical or magnetic field. We investigated all possible stacking configurations of chemical-vapor-deposition-grown trilayer MoS2 (AAA, ABB, AAB, ABA, and 3R). Although the AAA, ABA, 3R stackings possess a sole peak with lower degree of valley polarization than that in monolayer samples, the AAB (ABB) stackings exhibit two distinct peaks, one similar to that observed in monolayer MoS2 and an additional unpolarized peak at lower energy. Our findings provide a more complete understanding of valley quantum control for future valleytronics.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Fang Li,Hui Zhang,You Li,Yibin Zhao,Mingyan Liu,Yunwei Yang,Jiamin Yao,Shaolong Min,Erjun Kan,Yi Wan

DOI: https://doi.org/10.3390/nano13050861

IF: 5.3

2023-02-25

Nanomaterials

Abstract:Layered transition metal dichalcogenides (TMDs) provide a favorable research platform for the advancement of spintronics and valleytronics because of their unique spin-valley coupling effect, which is attributed to the absence of inversion symmetry coupled with the presence of time-reversal symmetry. To maneuver the valley pseudospin efficiently is of great importance for the fabrication of conceptual devices in microelectronics. Here, we propose a straightforward way to modulate valley pseudospin with interface engineering. An underlying negative correlation between the quantum yield of photoluminescence and the degree of valley polarization was discovered. Enhanced luminous intensities were observed in the MoS2/hBN heterostructure but with a low value of valley polarization, which was in stark contrast to those observed in the MoS2/SiO2 heterostructure. Based on the steady-state and time-resolved optical measurements, we reveal the correlation between exciton lifetime, luminous efficiency, and valley polarization. Our results emphasize the significance of interface engineering for tailoring valley pseudospin in two-dimensional systems and probably advance the progression of the conceptual devices based on TMDs in spintronics and valleytronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

LeYi Zhao,Hai Wang,TianYu Liu,FangFei Li,Qiang Zhou,HaiYu Wang

DOI: https://doi.org/10.1007/s11431-022-2414-5

2024-01-01

Abstract:Monolayer transition metal dichalcogenides (TMDCs) have become a promising platform in valleytronics due to possessing the regulatable valley degrees of freedom. While, as a result of the rapid intervalley scattering, it is difficult to measure the PL valley polarization of monolayer TMDCs at room temperature, which limits their application in valleytronics devices. Here, we report a room temperature photoluminescence (PL) valley polarization up to 3.73% in an “optical bilayer” WS 2 formed by transferring monolayer WS 2 onto flat Ag film. Furthermore, in the transient absorption (TA) measurements, a remarkably long valley depolarization lifetime is found. Thus, we demonstrate the valley properties of such “optical bilayer” WS 2 resemble actual bilayer WS 2 , in which the robust valley polarization can be attributed to the phonons depletion effect and the blocked interlayer hopping processes. These peculiar valley features in “optical bilayer” WS 2 provide a particularly simple method to enhance valley control at room temperature.
Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Yonggang Li,Zhen Zhan,Shengjun Yuan

DOI: https://doi.org/10.1103/physrevb.109.085118

2024-01-01

Abstract:Ultraflat bands have already been detected in twisted bilayer graphene and twisted bilayer transition-metal dichalcogenides, which provide a platform to investigate strong correlations. In this paper, the electronic properties of twisted trilayer molybdenum disulfide (TTM) are investigated via an accurate tight-binding Hamiltonian. We find that the highest valence bands are derived from the F-point of the constituent monolayer, and they exhibit a graphenelike dispersion or become isolated flat bands that are dependent on the starting stacking arrangements. The lattice relaxation, local deformation, and external fields can significantly tune the electronic structures of TTM. After introducing the spin-orbital coupling effect, we find a spin-valley-layer locking effect at the minimum of the conduction band at the K- and K'-point of the Brillouin zone, which may provide a platform to study optical properties and magnetoelectric effects.
Effect of Stacking Type and Magnetic Moment in Spin-Valley Polarized MoS2–MoSe2 Heterobilayers

Yanwei Wu,Tao Liu,Ning Hao,Mingsheng Long,Min Zhang,Qingqing Sun,Lei Shan

DOI: https://doi.org/10.1063/5.0105206

IF: 1.697

2022-01-01

AIP Advances

Abstract:In this work, we focused on engineering the bandgap of the MoS2–MoSe2 heterobilayer via either stacking type or induced magnetic moment with the aid of density functional theory. We have computed the electronic properties of different stacking MoS2–MoSe2 heterobilayers and their magnetization components, in which all situations retain spin-valley locking. Calculations show that different stacking types can cause a bandgap change of a maximum of 0.1 eV. On the other hand, a micro-enhanced magnetic moment in the heterobilayer increases the bandgap (in some cases, there are changes close to 0.3 eV) significantly. Results suggest that the stacking type and induced magnetic moment make MoS2–MoSe2 heterobilayers potential candidates for valleytronics applications. This study provides a new pathway in tuning spin-valley polarization of valleytronics devices.
Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Chun-Wen Chan,Chia-Yun Hsieh,Fang-Mei Chan,Pin-Jia Huang,Chao-Yao Yang

DOI: https://doi.org/10.3390/ma17163933

2024-08-08

Abstract:Transition metal dichalcogenide (TMD) monolayers exhibit unique valleytronics properties due to the dependency of the coupled valley and spin state at the hexagonal corner of the first Brillouin zone. Precisely controlling valley spin-polarization via manipulating the electron population enables its application in valley-based memory or quantum technologies. This study uncovered the uncompensated spins of the antiferromagnetic nickel oxide (NiO) serving as the ferromagnetic (FM) order to induce valley spin-polarization in molybdenum disulfide (MoS2) monolayers via the magnetic proximity effect (MPE). Spin-resolved photoluminescence spectroscopy (SR-PL) was employed to observe MoS2, where the spin-polarized trions appear to be responsible for the MPE, leading to a valley magnetism. Results indicate that local FM order from the uncompensated surface of NiO could successfully induce significant valley spin-polarization in MoS2 with the depolarization temperature approximately at 100 K, which is relatively high compared to the related literature. This study reveals new perspectives in that the precise control over the surface orientation of AFMs serves as a crystallographic switch to activate the MPE and the magnetic sustainability of the trion state is responsible for the observed valley spin-polarization with the increasing temperature, which promotes the potential of AFM materials in the field of exchange-coupled Van der Waals heterostructures.
Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems

Yun-Qin Li,Yu-Ke Zhang,Xin-Le Lu,Ya-Ping Shao,Zhi-qiang Bao,Jun-Ding Zheng,Wen-Yi Tong,Chun-Gang Duan

2024-10-04

Abstract:As an emerging magnetic phase, altermagnets with compensated magnetic order and non-relativistic spin-splitting have attracted widespread attention. Currently, strain engineering is considered to be an effective method for inducing valley polarization in altermagnets, however, achieving controllable switching of valley polarization is extremely challenging. Herein, combined with tight-binding model and first-principles calculations, we propose that interlayer sliding can be used to successfully induce and effectively manipulate the large valley polarization in altermagnets. Using Fe2MX4 (M = Mo, W; X = S, Se or Te) family as examples, we predict that sliding induced ferrovalley states in such systems can exhibit many unique properties, including the linearly optical dichroism that is independent of spin-orbit coupling, and the anomalous valley Hall effect. These findings imply the correlation among spin, valley, layer and optical degrees of freedom that makes altermagnets attractive in spintronics, valleytronics and even their crossing areas.

Materials Science
Unveiling exceptionally robust valley contrast in AA- and AB-stacked bilayer WS 2 .

Yanlong Wang,Chunxiao Cong,Jingzhi Shang,Mustafa Eginligil,Yuqi Jin,Gang Li,Yu Chen,Namphung Peimyoo,Ting Yu

DOI: https://doi.org/10.1039/c8nh00306h

2019-01-01

Nanoscale Horizons

Abstract:Valleytronics is a particularly interesting field that employs the valley degree of freedom for information manipulation. The fascinating prospects for realizing valleytronic devices have inspired persistent efforts towards exploring material systems with robust valley polarization. Monolayer transition metal dichalcogenides (TMDs) obey the well-known valley-dependent selection rule as a result of their inversion asymmetry. However, for inversionsymmetric bilayer tungsten-based TMDs, highly selective valley polarization has been surprisingly observed and is not yet fully understood. Here we systematically study the origin of the anomalously high valley polarization in bilayer WS2 by temperature-dependent polarization-resolved photoluminescence measurements. It is found that acoustic phonons play a critical role in the valley polarization of bilayer WS2. For some WS2 bilayers with relatively small intensity ratios of indirect to direct bandgap emission, acoustic phonons could remarkably assist the intervalley scattering process and smear the valley contrast. On the other hand, in other bilayers, which show obvious indirect band gap emission, the indirect optical transition process depletes the phonon mode at the K point dramatically and results in anomalously robust valley polarization in bilayer WS2. These results help recognize the crucial role of electron-phonon coupling in intervalley relaxation in bilayer WS2 and provide new insights into the future design of valleytronic devices based on two-dimensional TMDs.
Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Ting Cao,Gang Wang,Wenpeng Han,Huiqi Ye,Chuanrui Zhu,Junren Shi,Qian Niu,Pingheng Tan,Enge Wang,Baoli Liu,Ji Feng

DOI: https://doi.org/10.1038/ncomms1882

IF: 16.6

2012-01-01

Nature Communications

Abstract:A two-dimensional honeycomb lattice harbours a pair of inequivalent valleys in the k -space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K ± . It is particularly appealing to exploit this emergent degree of freedom of charge carriers, in what is termed 'valleytronics'. The physics of valleys mimics that of spin, and will make possible devices, analogous to spintronics, such as valley filter and valve, and optoelectronic Hall devices, all very promising for next-generation electronics. The key challenge lies with achieving valley polarization, of which a convincing demonstration in a two-dimensional honeycomb structure remains evasive. Here we show, using first principles calculations, that monolayer molybdenum disulphide is an ideal material for valleytronics, for which valley polarization is achievable via valley-selective circular dichroism arising from its unique symmetry. We also provide experimental evidence by measuring the circularly polarized photoluminescence on monolayer molybdenum disulphide, which shows up to 50% polarization.
Magnetically and electrically controllable valley splittings in MXene monolayers

Huiqian Wang,Li Liang,Xiaohui Wang,Xiaoyu Wang,Xiao Li

2023-07-07

Abstract:The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means. Based on the first-principle calculations, we study the valley properties and associated manipulations of multiferroic Co$_2$CF$_2$ monolayers with different stacking patterns. Our calculations show that the Co$_2$CF$_2$ monolayer in the H$^{\prime}$ phase is a ferrovalley material, with sizable valley splittings. By rotating the magnetization direction, the valley splittings can be tuned for both the magnitude and sign. The electric field, driving the reversal of the electric polarization, can also change the magnitude of the valley splittings. Besides, a metastable T$^{\prime}$ phase exhibits valley splittings as well, of which the magnitude and sign can be simultaneously controlled by applied magnetic and electric fields. These findings offer a practical way for realizing highly tunable valleys by multiferroic couplings.

Materials Science,Mesoscale and Nanoscale Physics
Magnetically and electrically controllable valley splittings in MXene Co2CF2 monolayers

Huiqian Wang,Li Liang,Xiaohui Wang,Xiaoyu Wang,Xiao Li

DOI: https://doi.org/10.1063/5.0191368

IF: 4

2024-02-26

Applied Physics Letters

Abstract:The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means. Based on the first-principle calculations, we study the valley properties and associated manipulations of multiferroic Co2CF2 monolayers with different stacking patterns. Our calculations show that the Co2CF2 monolayer in the H′ phase is a ferrovalley material, with sizable valley splittings. By rotating the magnetization direction, the valley splittings can be tuned for both the magnitude and sign. The process of the ferroelectric switching can also change the magnitude of the valley splittings. In addition, a metastable T′ phase exhibits valley splittings as well, of which the magnitude and sign can be simultaneously controlled by applied magnetic field and ferroelectric switching. These findings offer a practical way for realizing highly tunable valleys by multiferroic couplings.

physics, applied
Inter-Valley Spiral Order In The Mott Insulating State Of A Heterostructure Of Trilayer Graphene-Boron Nitride

Guo-Yi Zhu,Tao Xiang,Guang-Ming Zhang

DOI: https://doi.org/10.1016/j.scib.2018.06.022

IF: 18.9

2018-01-01

Science Bulletin

Abstract:Recent experiment has shown that the ABC-stacked trilayer graphene-boron nitride Moire super-lattice at half-filling is a Mott insulator. Based on symmetry analysis and effective band structure calculation, we propose a valley-contrasting chiral tight-binding model with local Coulomb interaction to describe this Moire super-lattice system. By matching the positions of van Hove points in the low-energy effective bands, the valley-contrasting staggered flux per triangle is determined around pi/2. When the valence band is half-filled, the Fermi surfaces are found to be perfectly nested between the two valleys. Such an effect can induce an inter-valley spiral order with a gap in the charge excitations, indicating that the Mott insulating behavior observed in the trilayer graphene-boron nitride Moire super-lattice results predominantly from the inter-valley scattering. (C) 2018 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Ningbo Li,Jiayong Zhang,Yang Xue,Tong Zhou,Zhongqin Yang

DOI: https://doi.org/10.1039/c7cp07610j

IF: 3.3

2018-01-01

Physical Chemistry Chemical Physics

Abstract:On the basis of valley degree of freedom, there would be immense potential application in valleytronics. Introducing magnetism into triangular or hexagonal lattices is a promising route to realize valley polarization, which is indispensable for applying the valley degree of freedom. In this study, we explored valley polarization by depositing a heterostructure of a MoTe2 monolayer on the (0 0 1) surface of an antiferromagnetic RbMnCl3 substrate. First principles-calculations showed that due to proximity-induced Zeeman effects, the MoTe2 monolayer was drastically magnetized by the topmost Mn layer in the substrate and a very large valley splitting (about 109 meV) was achieved. Using an effective Hamiltonian model, the effect of the competition of the spin-orbit coupling (SOC) and exchange field in the system on the valley polarization was also investigated. The magnitude of the valley splitting was found to be limited by the smaller SOC value and the induced exchange field, providing information on the enhancement of the valley polarization. A device rudiment with an anomalous valley Hall effect is proposed.
Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

Wei Wu,Mengyu Liu,Jiangpeng Zhou,Jin'an Li,Yuxiang Zhang,Feiya Xu,Xu Li,Yaping Wu,Zhiming Wu,Junyong Kang

DOI: https://doi.org/10.1021/acs.nanolett.4c00503

IF: 10.8

2024-05-17

Nano Letters

Abstract:Magnetic proximity interaction provides a promising route to manipulate the spin and valley degrees of freedom in van der Waals heterostructures. Here, we report a control of valley pseudospin in the WS(2)/MoSe(2) heterostructure by utilizing the magnetic proximity effect of few-layered CrBr(3) and, for the first time, observe a substantial difference in valley polarization of intra/interlayer excitons under different circularly polarized laser excitations, referred to as chirality-dependent...

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Ting Cao,Ji Feng,Junren Shi,Qian Niu,Enge Wang

DOI: https://doi.org/10.48550/arXiv.1112.4013

2011-12-17

Materials Science

Abstract:A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this emergent degree of freedom of charge carriers, in what is termed "valleytronics", if charge carrier imbalance between the valleys can be achieved. The physics of valley polarization will make possible electronic devices such as valley filter and valley valve, and optoelectronic Hall devices, all very promising for next-generation electronic and optoelectronic applications. The key challenge lies with achieving valley imbalance, of which a convincing demonstration in a two-dimensional honeycomb structure remains evasive, while there are only a handful of examples for other materials. We show here, using first principles calculations, that monolayer MoS_2, a novel two-dimensional semiconductor with a 1.8 eV direct band gap, is an ideal material for valleytronics by valley- selective circular dichroism, with ensuing valley polarization and valley Hall effect.
Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Min‐kyung Jo,Eunji Lee,Eoram Moon,Bo Gyu Jang,Jeongtae Kim,Krishna Prasad Dhakal,Saeyoung Oh,Seong Rae Cho,Nurul Hasanah,Seungmo Yang,Hu Young Jeong,Jeongyong Kim,Kibum Kang,Seungwoo Song

DOI: https://doi.org/10.1002/adma.202407997

IF: 29.4

2024-10-08

Advanced Materials

Abstract:The study demonstrates highly electron‐doped multi‐monolayer 2H‐MoS2 through planar organic ion intercalation (1‐ethyl‐3‐methylimidazolium, EMIM+), maintaining a direct bandgap with high photoluminescence intensity, and stable valley polarization up to room temperature for future applications of valleytronics and spintronics. Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin‐orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin‐valley locking in K or K' valleys, the ultra‐short valley lifetime limits their room‐temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin‐orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1‐ethyl‐3‐methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate‐free method, opens up potential applications in valley‐selective optoelectronics and valley transistors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Bilayer Stacking Ferrovalley without Breaking Time-Reversal Symmetry

Guoliang Yu,Junyi Ji,Changsong Xu,H. J. Xiang

2023-04-24

Abstract:Non-volatile manipulation of valley polarization in solids has long been desired for valleytronics applications but remains challenging. Here, we propose a novel strategy for non-volatile manipulating valleys through bilayer stacking, which enables spontaneous valley polarization without breaking time-reversal symmetry. We call this noval physics as bilayer stacking ferrovalley (BSFV). The group theory analysis reveals that the two-dimensional (2D) valley materials with hexagonal and square lattices can host BSFV. By searching the 2D material database, we discovered 14 monolayer 2D materials with direct gaps that are candidates for realizing BSFV. Further first-principles calculations demonstrate that BSFV exists in RhCl3 and InI bilayers. The bilayer stacking breaks their three- and four-fold rotation symmetry, resulting in 39 and 326 meV valley polarization, respectively. More interestingly, the valley polarization in our systems can be switched by interlayer sliding. Our study opens up a new direction for designing ferrovalley materials and thus greatly enriches the platform for the research of valleytronics.

Materials Science
Topological superconductivity, ferromagnetism, and valley-polarized phases in moire systems: Renormalization group analysis for twisted double bilayer graphene

Yi-Ting Hsu,Fengcheng Wu,S. Das Sarma

DOI: https://doi.org/10.1103/PhysRevB.102.085103

2020-08-11

Abstract:Recent experiments have observed possible spin- and valley-polarized insulators and spin-triplet superconductivity in twisted double bilayer graphene, a moire structure consisting of a pair of Bernal-stacked bilayer graphene. Besides the continuously tunable band widths controlled by an applied displacement field and twist angle, these moire bands also possess van Hove singularities near the Fermi surface and a field-dependent nesting which is far from perfect. Here we carry out a perturbative renormalization group analysis to unbiasedly study the competition among all possible instabilities in twisted double bilayer graphene and related systems with a similar van Hove fermiology in the presence of weak but finite repulsive interactions. Our key finding is that there are several competing magnetic, valley, charge, and superconducting instabilities arising from interactions in twisted double bilayer graphene, which can be tuned by controlling the displacement field and the twist angle. In particular, we show that spin- or valley-polarized uniform instabilities generically dominate under moderate interactions smaller than the band width, whereas $p$-wave spin-triplet topological superconductivity and exotic spin-singlet modulated paired state become important as the interactions decrease. Realization of our findings in general moire systems with a similar van Hove fermiology should open up new opportunities for manipulating topological superconductivity and spin- or valley-polarized states in highly tunable platforms.

Strongly Correlated Electrons,Mesoscale and Nanoscale Physics,Superconductivity
Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS_2-WSe_2 Heterobilayers

Dacen Waters,Yifan Nie,Felix Lupke,Yi Pan,Stefan Foelsch,Yu-Chuan Lin,Bhakti Jariwala,Kehao Zhang,Chong Wang,Hongyan Lv,Kyeongjae Cho,Di Xiao,Joshua A. Robinson,Randall M. Feenstra

DOI: https://doi.org/10.1021/acsnano.0c03414

IF: 17.1

2020-01-01

ACS Nano

Abstract:It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment (θ=0°), associated with flat bands in the Brillouin zone of the moiré pattern formed due to the lattice mismatch of the two layers. Peaks in the local density of states and confinement in a MoS2/WSe2 system was qualitatively described only considering local stacking arrangements, which cause band edge energies to vary spatially. In this work, we report the presence of large in-plane strain variation across the moiré unit cell of a θ=0° MoS2/WSe2 heterobilayer, and show that inclusion of strain variation and out-of-plane displacement in density functional theory calculations greatly improves their agreement with the experimental data. We further explore the role of twist-angle by showing experimental data for a twisted MoS2/WSe2 heterobilayer structure with twist angle of θ=15°, that exhibits a moiré pattern but no confinement.

Valley and band structure engineering of folded MoS 2 bilayers

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Valley polarization in stacked MoS2 induced by circularly polarized light

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Effect of Stacking Type and Magnetic Moment in Spin-Valley Polarized MoS2–MoSe2 Heterobilayers

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems

Unveiling exceptionally robust valley contrast in AA- and AB-stacked bilayer WS 2 .

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Magnetically and electrically controllable valley splittings in MXene monolayers

Magnetically and electrically controllable valley splittings in MXene Co2CF2 monolayers

Inter-Valley Spiral Order In The Mott Insulating State Of A Heterostructure Of Trilayer Graphene-Boron Nitride

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Bilayer Stacking Ferrovalley without Breaking Time-Reversal Symmetry

Topological superconductivity, ferromagnetism, and valley-polarized phases in moire systems: Renormalization group analysis for twisted double bilayer graphene

Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS_2-WSe_2 Heterobilayers