Abstract:Two dimensional materials have been attracting intensive interest due to their unique physical and optoelectronic properties. As an emerging two dimensional materials, SnSe2 have shown a considerable potential for next-generation electronic and optoelectronic. Herein, SnSe2 bulk crystals have been prepared by a chemical vapour transport method with high purity tin and selenium powder as precursors. Then SnSe2 multilayers has been successfully prepared by a micromechanical exfoliation method from the SnSe2 bulk crystals. The phase structures and elemental composition of the bulk crystal are investigated using an X-Ray diffractometer, an X-ray photoelectrons spectrometer and a Raman spectrometer. And the morphologies are observed using an optical microscope, an atomic force microscope and a transmission electron microscope. The measurement results show that the SnSe2 bulks are single crystals with a high crystallization and purity. The SnSe2 multilayers have a size of 25–35 μm and a thickness of 1.4 nm. To detect the electronic and photoresponse characteristics of the SnSe2 multilayers, a field effect transistor based on such SnSe2 are fabricated via a photolithographic-pattern-transfer method. The transistor has a smooth surface without wrinkles and bubbles, and also has a good contact with Au electrodes. The transistor shows a linear output characteristic and an obvious rectification. The on/off ratio of the device is 47.9 and the electron mobility is 0.25 cm2·V–1·s–1. As a photodetector, the field effect transistor exhibits obvious photoresponse to three visible lights with the wavelengths of 405, 532, and 650 nm. As the lasers are turned on and the device is under illuminations of three visible lights, the current increase rapidly to a saturation state. Then as the lasers are switched off, the current decrease and recover to the original state. The drain-source current can alternate between high and low states rapidly and reversibly, which demonstrates photoresponse characteristics of the devices are stable and sensible. Notably, it shows a strongest response to the 405 nm light at an intensity of 5.4 mW/cm2 with a high responsivity of 19.83 A/W, a good external quantum efficiency of 6.07 × 103%, a normalized detectivity of 4.23 × 1010 Jones, and a fast response time of 23.8 ms. The results of this work demonstrate that layered SnSe2 can be a suitable and excellent candidate for visible light photodetector and has a huge potential for high-performance optoelectronic devices.

High On/Off Ratio Photosensitive Field Effect Transistors Based on Few Layer Sns2

Visible Phototransistors Based on Vertical Nanolayered Heterostructures of SnS/SnS2 P-N and SnSe2/SnS2 N-N Nanoflakes

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

High-performance photodetectors based on two-dimensional tin(II) sulfide (SnS) nanoflakes

Out‐of‐Plane Homojunction Enabled High Performance SnS2 Lateral Phototransistor

ReS2 Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

Facile Synthesis of Tin Monosulfide Nanosheets Via Physical Vapour Deposition and Their Near-Infrared Photoresponse

Enhanced Photodetection Performance Of Schottky Pt/Sns2/Al And Au/Sns2/Al Photodetectors

Single- and few-layer 2H-SnS2 and 4H-SnS2 nanosheets for high-performance photodetection

Highly Sensitive and Fast Phototransistor Based on Large Size CVD-grown SnS2nanosheets

Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

Remarkable Improved Photoelectric Performance of SnS2 Field-Effect Transistor with Au Plasmonic Nanostructures

High-performance Hierarchical O-SnS/I-ZnIn2S4 Photodetectors by Leveraging the Synergy of Optical Regulation and Band Tailoring.

Multilayer SnS2/few-layer MoS2 Heterojunctions with In-Situ Floating Photogate Toward High-Performance Photodetectors and Optical Imaging Application

Highly Sensitive Phototransistors Based on Partially Suspended Monolayer WS2

High-performance Photodetectors Based on CVD-grown High-Quality SnS 2 Nanosheets

Layer‐Dependent Optical Modulation and Field‐Effect‐Transistor in Two‐Dimensional 4H‐SnS2 Layers

One-Step Cvd Fabrication And Optoelectronic Properties Of Sns2/Sns Vertical Heterostructures

Field Effect Transistor Photodetector Based on Two Dimensional SnSe2

Two-dimensional Heterojunction SnS2/SnO2 Photoanode with Excellent Photoresponse Up to Near Infrared Region