Abstract:As compared with polymer semiconductors, solution-processed small-molecule semiconductors usually have poorer film-formation properties, which induces wide variations in device performance in terms of mobility and threshold voltage, thus severely limiting their commercial applications. In this work, we propose an easily accessible method to improve the performance and reduce the variability of small-molecule organic field-effect transistors (OFETs) by blending organic semiconductors with an insulator polymer, which is subsequently post-treated by gate stress to generate an electret. By blending the organic semiconductor 2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) with the insulator polystyrene, uniform transport layers with vertically phase segregated morphology are obtained, from which the mobility and threshold voltage of OFETs are largely manipulated. The OFETs exhibit field-effect mobilities as high as 7.5 cm2·V−1·s−1 with an on/off ratio exceeding 106 in ambient conditions. This double-layer structure provides an appropriate architecture for applying gate-stress to inject charges into the insulating layer, forming an electret. The generation of the electret is thermally accelerated and thus can be easily realized under moderate gate-stress at elevated temperature (e.g., 60 °C). After cooling, the electret layer serves as a floating-gate, which not only continuously tunes the threshold voltage and field-effect mobility, but also helps minimize the contact resistances and optimize the subthreshold swing. As an application of this method, a digital inverter is built and its performance is optimized via in situ tuning of its individual transistors.

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Solution‐Processed Small Molecule‐Polymer Blend Organic Thin‐Film Transistors with Hole Mobility Greater Than 5 Cm2/vs

Remarkable Enhancement of the Hole Mobility in Several Organic Small‐Molecules, Polymers, and Small‐Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid P‐dopant B(C6F5)3

Understanding Charge Transport in High‐Mobility P‐doped Multicomponent Blend Organic Transistors

Facile Blending Strategy for Boosting the Conjugated Polymer Semiconductor Transistor's Mobility

Robust Unipolar Electron Conduction using an Ambipolar Polymer Semiconductor with Solution-Processable Blends

The Influence of Film Morphology in High‐Mobility Small‐Molecule:Polymer Blend Organic Transistors

Solution‐Processable Multifused Thiophene Small Molecules and Conjugated Polymer Semiconducting Blend for Organic Field Effect Transistor Application

Melt-Processing of Complementary Semiconducting Polymer Blends for High Performance Organic Transistors

High-Performance Organic Thin-Film Transistor Based on a Dipolar Organic Semiconductor

The Impact of Molecular P‐doping on Charge Transport in High‐Mobility Small‐Molecule/Polymer Blend Organic Transistors

Donor-Acceptor-Based Organic Polymer Semiconductor Materials to Achieve High Hole Mobility in Organic Field-Effect Transistors

Blending Crystalline/liquid Crystalline Small Molecule Semiconductors: A Strategy Towards High Performance Organic Thin Film Transistors

A Simple Structure Conjugated Polymer for High Mobility Organic Thin Film Transistors Processed from Nonchlorinated Solvent

Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 Cm2 V−1 S−1 in Air (adv. Mater. 48/2015)

Greater than 10 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>: A breakthrough of organic semiconductors for field-effect transistors

Conjugated Polymer-Mediated Polymorphism of A High Performance, Small-Molecule Organic Semiconductor with Tuned Intermolecular Interactions, Enhanced Long-Range Order, and Charge Transport

Organic-semiconductor: Polymer-electret Blends for High-Performance Transistors

Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors

Conjugated Polymer Controlled Morphology and Charge Transport of Small-Molecule Organic Semiconductors

Thiazolothiazole-Containing Ambipolar Organic Semiconductor with Balanced Hole and Electron Mobility