Abstract:Molybdenum disulfide (MoS2) got tremendous attention due to its atomically thin body, rich physics, and high carrier mobility. The controlled synthesis of large area and high crystalline monolayer MoS2 nanosheets on diverse substrates remains a challenge for potential practical applications. Synthesizing different structured MoS2 nanosheets with horizontal and vertical orientations with respect to the substrate surface would bring a configurational versatility with benefit for numerous applications, including nanoelectronics, optoelectronics, and energy technologies. Among the proposed methods, ambient pressure chemical vapor deposition (AP-CVD) is a promising way for developing large-scale MoS2 nanosheets because of its high flexibility and facile approach. Here, we show an effective way for synthesizing large-scale horizontally and vertically aligned MoS2 on different substrates such as flat SiO2/Si, pre-patterned SiO2 and conductive substrates (TaN) benefit various direct TMDs production. In particular, we show precise control of CVD optimization for yielding high-quality MoS2 layers by changing growth zone configuration and the process steps. We demonstrated that the influence of configuration variability by local changes of the S to MoO3 precursor positions in the growth zones inside the CVD reactor is a key factor that results in differently oriented MoS2 formation. Finally, we show the layer quality and physical properties of as-grown MoS2 by means of different characterizations: Raman spectroscopy, scanning electron microscopy (SEM), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These experimental findings provide a strong pathway for conformally recasting AP-CVD grown MoS2 in many different configurations (i.e., substrate variability) or motifs (i.e., vertical or planar alignment) with potential for flexible electronics, optoelectronics, memories to energy storage devices.

Vertically Conductive MoS 2 Spiral Pyramid

Three-dimensional Spirals of Atomic Layered MoS2.

Vertically Conductive MoS2 Pyramids with a High Density of Active Edge Sites for Efficient Hydrogen Evolution

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Deriving MoS2 Nanoribbons from Their Flakes by Chemical Vapor Deposition.

Superior Dielectric Screening in Two-Dimensional MoS2 Spirals

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Synthesis and characterization of vertically standing MoS 2 nanosheets

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Probing the Growth Mechanisms of Vertical-Stacked and Lateral-Grown MoS2 Few Layers

Dynamically Induced Large‐Scale, Selective, and Vertical Structure Growth of MoS 2 Nanosheets

Vertical Heterostructure of Two-Dimensional Mos2 and Wse2 with Vertically Aligned Layers

Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide

Vapor-Liquid-Solid Growth of Monolayer MoS2 Nanoribbons

Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles

Mesoscale Imperfections in MoS2 Atomic Layers Grown by Vapor Transport Technique

Mesoscale Imperfections in MoS2 Atomic Layers Grown by a Vapor Transport Technique.

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS2 Nanosheets