Interlayer electrical resistivity of rotated graphene layers studied by in-situ scanning electron microscopy.

He Li,Xianlong Wei,Gongtao Wu,Song Gao,Qing Chen,Lian-Mao Peng
DOI: https://doi.org/10.1016/j.ultramic.2018.06.015
IF: 2.994
2018-01-01
Ultramicroscopy
Abstract:•An in-situ SEM method is developed for studying interlayer electrical transport between rotated 2D materials.•Interlayer electrical transport between rotated graphene is studied.•Interlayer resistivity of rotated graphene increases by 3 orders of magnitude with rotation angle increase.
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