Abstract:The sub-nanometer composition and interlayer thicknesses of the silicon-based Lu2O3/Al2O3 nanolaminates are regulated by atomic layer deposition, to fabricate polycrystalline Er-doped Lu3Al5O12 (LuAG:Er) nano-films and optimize their electroluminescence (EL) performance. The Lu:Al ratio in the nanolaminates strongly influences the crystallization temperature and the morphologies of garnet nanofilms, while the ratio sufficiently higher than stoichiometry promotes the crystallization into micrometer grains after annealing above 900 degrees C. EL devices based on these polycrystalline LuAG:Er nanofilms present the characteristic 1.53 mu m EL from Er3+ ions, exhibit the optimal external quantum efficiency of 10.0% and the power efficiency of 0.123%, with fluorescence lifetime measured as 1.2-1.8 ms. The EL efficiencies and lifetime are closely correlated to the Lu:Al ratio and doping concentrations. The electron injection within the LuAG:Er devices is dominated by the Fowler-Nordheim tunneling, resulting in the impact-excitation of doped Er3+ ions and the characteristic emissions. This work explores the deposition of complex oxide nanofilms with designed composition and crystallinity at low temperature, and the development of Si-based optoelectronic devices from garnet films. (C) 2021 Elsevier B.V. All rights reserved.

Intense Electroluminescence from Al2O3/Tb2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon.

Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Strong Electroluminescence From Sio2-Tb2o3-Al2o3 Mixed Layers Fabricated By Atomic Layer Deposition

Green Electroluminescence from Tb4O7 Films on Silicon: Impact Excitation of Tb3+ Ions by Hot Carriers

Near-infrared Electroluminescence from Atomic Layer Doped Al2O3:Yb Nanolaminate Films on Silicon

Control of Interaction Between Tm2O3 Layers in Electroluminescent Al2O3/ Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition

Electroluminescent Yb2O3:Er and Yb2Si2O7:Er Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates

Exploration of the Green Electroluminescence from Al2O3/Ho2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Electroluminescent Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> nanofilms fabricated by atomic layer deposition on silicon: using Yb as the luminescent dopant and crystallization impetus

Enhanced photoluminescence of Tb3+ in SnO2 film by phosphorus diffusion process

Preparation and luminescence properties of Tb3+ doped SiO 2 film on TiO2 nanotube arrays

Near-Infrared Luminescence of Tb3+-Yb3+ and Ce3+-Yb3+ Co-Doped Y3al5o12

Bright Green Electroluminescence from Tb3+ in Silicon Metal-Oxide-semiconductor Devices

Green electroluminescence generated from the thin film based on a soluble lanthanide complex

Electroluminescent Y3Al5O12 Nanofilms Fabricated by Atomic Layer Deposition on Silicon: Using Yb As the Luminescent Dopant and Crystallization Impetus

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Enhancement of the Electroluminescence from Amorphous Er-Doped Al<sub>2</sub>O<sub>3</sub> Nanolaminate Films by Y<sub>2</sub>O<sub>3</sub> Cladding Layers Using Atomic Layer Deposition

Photoluminescence of SiO2 Thin Films Doped by Tb3+

Energy Transfer under Electrical Excitation and Enhanced Electroluminescence in the Nanolaminate Yb,Er Co‐Doped Al2O3 Films

Electroluminescent Polycrystalline Er-doped Lu3Al5O12 Nanofilms Fabricated by Atomic Layer Deposition on Silicon