Promoting a Weak Coupling of Monolayer MoSe 2 Grown on (100)-Faceted Au Foil
Qilong Wu,Xiaoshuai Fu,Ke Yang,Hongyu Wu,Li Liu,Li Zhang,Yuan Tian,Long-Jing Yin,Wei-Qing Huang,Wen Zhang,Ping Kwan Johnny Wong,Lijie Zhang,Andrew T. S. Wee,Zhihui Qin
DOI: https://doi.org/10.1021/acsnano.0c08513
IF: 17.1
2021-03-03
ACS Nano
Abstract:As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe<sub>2</sub> is a strong candidate material for next-generation opto- and valley-electronic devices. However, due to substrate effects such as lattice mismatch and dielectric screening, preserving the monolayer's intrinsic properties remains challenging. This issue is generally significant for metallic substrates whose active surfaces are commonly utilized to achieve direct chemical or physical vapor growth of the monolayer films. Here, we demonstrate high-temperature-annealed Au foil with well-defined (100) facets as a weakly interacting substrate for atmospheric pressure chemical vapor deposition of highly crystalline monolayer MoSe<sub>2</sub>. Low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a honeycomb structure of MoSe<sub>2</sub> with a quasi-particle bandgap of 1.96 eV, a value comparable with other weakly interacting systems such as MoSe<sub>2</sub>/graphite. Density functional theory calculations indicate that the Au(100) surface exhibits the preferred energetics to electronically decouple from MoSe<sub>2</sub>, compared with the (110) and (111) crystal planes. This weak coupling is critical for the easy transfer of monolayers to another host substrate. Our study demonstrates a practical means to produce high-quality monolayers of transition-metal dichalcogenides, viable for both fundamental and application studies.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c08513?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c08513</a>.Additional figures regarding the growth process, the characteristics (Figures S1–S8), and the lattice parameters and interfacial distance of calculated models (Table S1) (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c08513/suppl_file/nn0c08513_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology