(Invited) Transistors, Memristors and Optoelectronics Based on Two-Dimensional Molybdenum Disulfide
Melkamu Belete,Daniel Schneider,Eros Reato,Olof Engström,Zhenxing Wang,Thorsten Wahlbrink,Satender Kataria,Max Christian Lemme
DOI: https://doi.org/10.1149/ma2020-01221297mtgabs
2020-01-01
ECS Meeting Abstracts
Abstract:Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide material. This two-dimensional (2D) layered material has a band gap ranging from 1.3 eV in bulk form (indirect) to 1.88 eV as a monolayer (direct). The material has been suggested as a potential candidate for applications in nanoelectronics, optoelectronics and neuromorphic computing [1]–[4]. In this talk, the principles of scalable growth through thermal conversion of metals and metal-organic vapor phase growth will be discussed [5], [6]. These materials are then integrated into the silicon technology platform to demonstrate device applications. Conventional field effect transistors with MoS2 channels show promising characteristics. In addition, ion-based plasticity promises to enable memristive functionality on MoS2 devices. In particular, vertically aligned MoS2 layers allow the tuning of energy barriers at MoS2/semiconductor Schottky junctions through mobile ions [7], [8]. These ions (OH-) likely originate from catalytic splitting of water molecules. Spectral response measurements of MoS2 based devices provide insight into the band structure and beyond, as photodetectors based on MoS2/silicon/graphene and MoS2/amorphous silicon heterostructures show peculiar responsivity in the infrared regime [9]–[11]. Acknowledgements The authors acknowledge funding through the European Union’s Horizon 2020 research and innovation programme under grant agreements 785219 (Graphene Flagship) and 829035 (QUEFORMAL), the German BMBF grant NEUROTEC (16ES1134) and the DFG projects MOSTFLEX (407080863) and ULTIMOS2 (412113712). References [1] K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett., vol. 105, no. 13, p. 136805, Sep. 2010. [2] B. Radisavljevic and A. Kis, “Mobility engineering and a metal–insulator transition in monolayer MoS2,” Nat. Mater., vol. 12, no. 9, pp. 815–820, Sep. 2013. [3] A. Bablich, S. Kataria, and M. C. Lemme, “Graphene and Two-Dimensional Materials for Optoelectronic Applications,” Electronics, vol. 5, no. 1, p. 13, Mar. 2016. [4] V. K. Sangwan et al., “Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide,” Nature, vol. 554, no. 7693, pp. 500–504, Feb. 2018. [5] S. Kataria et al., “Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation,” Adv. Mater. Interfaces, vol. 4, no. 17, p. 1700031, Sep. 2017. [6] M. Marx et al., “Large-area MoS2 deposition via MOVPE,” J. Cryst. Growth, vol. 464, pp. 100–104, Apr. 2017. [7] M. Belete et al., “Dielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics,” ACS Appl. Nano Mater., vol. 1, no. 11, pp. 6197–6204, Nov. 2018. [8] M. Belete et al., “Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity,” arXiv:1911.06032, 2019. [9] C. Yim et al., “Heterojunction Hybrid Devices from Vapor Phase Grown MoS2,” Sci. Rep., vol. 4, Jun. 2014. [10] M. Belete et al., “Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes,” presented at the European Solid-State Device Research Conference (ESSDERC), Krakow, Poland, 2019. [11] A. Bablich et al., “Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection,” ACS Photonics, vol. 6, no. 6, pp. 1372–1378, Jun. 2019.