An Improved RRAM-Based Binarized Neural Network with High Variation-Tolerated Forward/Backward Propagation Module
Yizhou Zhang,Zheng Zhou,Peng Huang,Mengqi Fan,Runze Han,Wensheng Shen,Lifeng Liu,Xiaoyan Liu,Bin Gao,Huaqiang Wu,He Qian,Jinfeng Kang
DOI: https://doi.org/10.1109/ted.2019.2956967
IF: 3.1
2020-01-01
IEEE Transactions on Electron Devices
Abstract:Binarized neural network (BNN) enables resistive switching random access memory (RRAM) with high nonlinearity and nonsymmetry to realize online training, using an RRAM comparator structure. In this work, a new hardware implementation approach is proposed to improve the efficiency of BNN. In the approach, an 1T1R array-based propagation module is introduced and designed to realize the computing acceleration of fully parallel vector-matrix multiplication (VMM) in both forward and backward propagations. Using the 1T1R-based propagation module, high computing efficiency is achieved in both training and inference tasks, improving by $50\times $ and $177\times $ , respectively. To solve the computation error caused by device variation, a novel operation scheme with low gate voltage is proposed. With the operation scheme, the RRAM variation is dramatically suppressed by 74.8 for cycle-to-cycle and 59.9 for device-to-device. It enables high-accuracy VMM calculation and, therefore, achieves 94.7 accuracy with a typical BNN, showing only 0.7 degradation from the ideal variation-free case.