Abstract:We analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average crystallite size increased from15.30 ± 0.73 nm to 16.71 ± 012 nm, when Co content is increased from 1 to 4%. Enhancement of dopants (Mn, Co) introduced more and more oxygen vacancies to ZnO lattice confirmed from EDX and XPS. The high-temperature annealing leads to reduction of the dielectric properties due to enhancement in grain growth (large grain volume and lesser number of grain boundaries) with the incorporation of Co and Mn ions into the ZnO lattice. The electrical conductivity of the Mn doped and (Mn, Co) co-doped ZnO samples were enhanced due to increase in the volume of conducting grains and charge density (liberation of trapped charge carriers in oxygen vacancies and free charge carriers at higher frequencies). The Mn-doped and (Mn, Co) co-doped ZnO NPs show ferromagnetic (FM) behaviour. The saturation and remnant magnetizations (Ms and Mr) elevates from (0.235 to 1.489) × 10−2 and (0.12 to 0.27) × 10−2 emu/g while Coercivity (Hc) reduced from 97 to 36 Oe with enhancement in the concentration of dopants in ZnO matrix. Oxygen vacancies were found to be the main reason for room-temperature ferromagnetism (RTFM) in the doped and co-doped ZnO NPs. The results show that the enhanced dielectric and magnetic properties of Mn doped and (Mn, Co) co-doped ZnO is strongly correlated with the concentration of oxygen vacancies. The observed enhanced RTFM, dielectric properties and electrical conductivity makes TM doped ZnO nanoparticles suitable for spintronics, microelectronics and optoelectronics based applications.

Intrinsic defects and grain boundaries formulated magnetism and dielectric response in ZnO:(Mn+Tb) nanocrystals

Effect of Defects on Room-Temperature Ferromagnetism in Co and Na Co-Doped ZnO

Ferromagnetism and dielectric properties in Zn0.95−xNdxTM0.05O (TM=Co, Fe) nanocrystals: Collective role of grain boundaries and oxygen vacancies

Role of Divalent Co2+ and Trivalent Tb3+ Incorporation in ZnO Nanocrystals: Structural, Optical, Photoluminescence Properties and Enhanced Ferromagnetism

Ferromagnetism in Tb Doped ZnO Nanocrystalline Films

Zn Vacancy Induced Room-Temperature Ferromagnetism in Mn-Doped Zno

Defects induced ferromagnetism in Mn doped ZnO

Room Temperature Ferromagnetism in Tb Doped ZnO Nanocrystalline Films

Structural and Magnetic Properties of Zn1−xMnxO (0≤x≤0.40) Nanoparticles

Oxygen vacancies induced room temperature ferromagnetism and enhanced dielectric properties in Co and Mn co-doped ZnO nanoparticles

Structure, optical, and room-temperature ferromagnetic properties of pure and transition-metal-(Cr, Mn, and Ni)-doped ZnO nanocrystalline films grown by the sol-gel method

Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film

Ferromagnetism Induced by Oxygen-Vacancy Complex in (mn, In) Codoped ZnO

Magnetic Properties of Transition-Metal-dopedzn1−xtxo(t=

Element-Specific Electronic Structure of Mn Dopants and Ferromagnetism of (zn,mn)o Thin Films

Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires

Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures

Magnetic and Transport Property Studies of Nanocrystalline ZnxFe3−xO4

Electronic structure and magnetism of transition metal doped Zn12O12 clusters: Role of defects

Room Temperature Ferromagnetism in Dilute Magnetic Semiconducting ZnO Nanoparticles Co-Doped with Tb and Fe

Energy Gap and Defects Engineered Optical, and Magnetic Properties of ZnO-based Diluted Magnetic Semiconducting Nanoparticles