Abstract:Silicon photonic devices are key components in optical imaging and sensing for communication, and the development of silicon-based photodetectors with ideal performance in the visible and infrared spectral ranges can promote the application of silicon photonics in various photoelectronic systems. Here, a Au-doped black silicon photodetector was prepared by a femtosecond laser direct writing technique. The conical micro-/nanostructures with different sizes were produced by different laser fluence irradiation. Ultrafast pump-probe technology revealed that the strong spallation process and phase explosion between Au and silicon facilitate the interfusion of Au atoms into the silicon lattice. EDS analyses, Raman spectra, and XPS spectra show the uniform distribution of Au elements, multiconfiguration amorphous phase transition, and stable chemical valence states of Au elements in Au-doped black silicon layers, respectively. The excellent geometric light trapping performance of the surface conic structure-assisted photodetector achieved a high absorptance of 95% in the 200-1100 nm band. Simultaneously, the introduction of the intermediate band by Au hyperdoping also leads to a strong absorptance of 75% in the 1100-2500 nm band. The photoelectrical response rate of the Au-doped black silicon photodetectors increased by 10 times in the infrared wavelength band by means of the introduced intermediate energy levels through Au element doping. The switching photocurrent ratio is also found to be boosted 10 times, which comes from the reduction of the photon injection barrier. The excellent photoelectronic properties lead to the increased potential of femtosecond laser processing for integration with photonics and electronics, which shows great possibilities in the further progress of energy devices, information technology, and artificial intelligence.

Comparison of Near-Infrared Absorption and Photoresponse of Silicon Doped with Se and Te Via Fs-Laser Irradiation

Comparison of Dopant Incorporation and Near-Infrared Photoresponse for Se-Doped Silicon Fabricated by fs Laser and ps Laser Irradiation

Photosensitivity of Te-doped Silicon Photodiodes Fabricated Using Femtosecond Laser Irradiation.

Research on photoelectric characteristics of (S, Se) co-doped silicon fabricated by femtosecond-laser irradiation

Dependence of the Optoelectronic Properties of Se-doped Silicon on the Thickness of Dopant Film

Fabrication and Infrared Absorption of Tellurium Doped Silicon Via Femtosecond Laser Irradiation

Effect of the Thickness of Si Film on Si/Se Film Doped Silicon Prepared by Femtosecond Laser

Near-Infrared Photoresponse of Femtosecond-Laser Processed Se-Doped Silicon N(+) - N Photodiodes

Absorption Enhancement of Near Infrared in Te Doped Nanoporous Silicon

Se Doping of Silicon with Si/Se Bilayer Films Prepared by Femtosecond-Laser Irradiation

Synergic effect of N and Se facilitates photoelectric performance of co-hyperdoped silicon

Synergic Effect of N and Se Facilitates Photoelectric Performance in Co-Hyperdoped Silicon

Au-Doped Black Silicon Photodetector Fabricated by a Femtosecond Laser with Excellent Near-Infrared Response

Infrared Photodiode of Textured Silicon Irradiated under Mixed Gas by Femtosecond Laser

Physical Mechanisms for the Unique Optical Properties of Chalcogen-Hyperdoped Silicon

Sub-bandgap Absorption and Photo-Response of Molybdenum Heavily Doped Black Silicon Fabricated by a Femtosecond Laser

Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Fabrication of Micro-Nano Structure Se-doped Silicon Via Picosecond Laser Irradiation Assisted by Dopant Film

Sub-bandgap Photo-Response of Non-Doped Black-Silicon Fabricated by Nanosecond Laser Irradiation.

Nanosecond laser annealing processed surface-structured hyperdoped silicon for efficient near-infrared detection

1064 Nm Photoresponse Enhancement of Femtosecond-Laser-irradiated Si Photodiodes by Etching Treatment