Sb 2 Se 3 Solar Cells Prepared with Selenized Dc-Sputtered Metallic Precursors

Chenchen Yuan,Xin Jin,Guoshun Jiang,Weifeng Liu,Changfei Zhu
DOI: https://doi.org/10.1007/s10854-016-4917-3
2016-01-01
Journal of Materials Science Materials in Electronics
Abstract:Sb2Se3 with suitable bandgap and non-toxic, abundant composition represents a promising absorber material as a replacement for Cu2ZnSnS4 and Cu(In,Ga)Se-2 for thin film solar cells. In this paper, we investigated the effect of annealing temperature on selenizing metal precursor deposited by sputtering. With optimized temperature, the best performance of the devices achieved the efficiency of 0.72 % with an open circuit voltage of 368 mV. This study provide the guideline to fabricate Sb2Se3 thin film solar cell as the same structure as CIGS.
What problem does this paper attempt to address?