Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

Universal p-Type Doping via Lewis Acid for 2D Transition-Metal Dichalcogenides

A Shallow Acceptor of Phosphorous Doped in MoSe<sub>2</sub> Monolayer

Modulating p-type doping of two dimensional material palladium diselenide

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application

Versatile Post-Doping toward Two-Dimensional Semiconductors

Tunable n-type and p-type doping of two-dimensional layered PdSe<sub>2</sub><i>via</i>organic molecular adsorption

Tunable n-type and p-type doping of two-dimensional layered PdSe 2 via organic molecular adsorption.

Chemical Trend of Transition-Metal Doping in WSe2

Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Controllable P-type doping and improved conductance of few-layer WSe2 via Lewis acid

Novel doping alternatives for single-layer transition metal dichalcogenides

Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping

Controllable Doping in 2D Layered Materials

Robust n-type doping of WSe2 enabled by controllable proton irradiation

Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

Doping transition metal in PdSeO3 atomic layers by aqueous cation exchange: A new doping protocol for a new 2D photocatalyst

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Controllable p-type Doping of 2D WSe2 via Vanadium Substitution

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant