Abstract:Although the emerging 3D DRAM products can significantly improve the computing system performance, the relatively high cost is one of the most critical issues that prevent their wide real-life adoption. Intuitively, a strong memory fault tolerance can be leveraged to reduce the fabrication cost of DRAM dies, and the total cost will reduce if the fabrication cost saving can off-set the cost overhead of memory fault tolerance. Nevertheless, such a simple concept can be a practically viable option only for 3D DRAM because: (1) The stacked logic die can solely implement memory fault tolerance inside 3D DRAM chips, obviating any changes on the host CPUs and CPU-DRAM interfaces. (2) With the total ownership of both the logic die and DRAM dies inside 3D DRAM chips, DRAM manufacturers can fully exploit the potential to truly minimize the 3D DRAM bit cost. Following this intuition, we developed a 3D DRAM fault tolerance design strategy. It can achieve a very strong tolerance to weak DRAM cells at very small redundancy and latency overhead. The key is to cohesively leverage the detectability of weak cells and runtime configurability of error correction code (ECC) decoding. In addition, this design strategy can gracefully embrace the inaccuracy of weak cell detection (e. g., weak cell miss-detection and false-detection). We carried out thorough mathematical analysis, and the results show that, under the redundancy overhead of 1: 8 (same as today's ECC DIMM), this design strategy can tolerate the weak cell rate of as high as 10(-4) and 6 x 10(-5) if 100 and 90 percent of all the weak cells are known in prior. Using Micron's hybrid memory cube (HMC) 3D DRAM chips as the test vehicle, we evaluated the implementation cost and the results show that it only consumes less than 0.4 mm(2) (45 nm node) on the logic die. Using CPU and DRAM simulators, we further carried out simulations over a variety of computing benchmarks and the results show that this design solution only incurs less than 2 percent performance degradation on average.

In-Growth Test For Monolithic 3d Integrated Sram

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

Test Architecture Design and Optimization for Three-Dimensional SoCs

Design and fabrication of a TSV interposer for SRAM integration

Memory Grouping for the Built-In Self-Test of Three-Dimensional Integrated Circuits

System-Technology Co-Optimization for 3D Monolithic Memory-Centric Computing

Mono 3 D to Develop Large-Scale Monolithic 3 D Integrated Circuits

Simulation and Optimization of 3D Heterogeneous Integration of Inertial Micro-System

Impact of Electrostatic Coupling and Wafer-Bonding Defects on Delay Testing of Monolithic 3D Integrated Circuits

Architecture design exploration of three-dimensional (3D) integrated DRAM

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Improving 3D DRAM Fault Tolerance Through Weak Cell Aware Error Correction.

Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process Imperfections

Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM Accelerating RRAM-based Computing-In-Memory Via Monolithic 3D Integration for Edge AI

Cost-Aware Lifetime Yield Analysis of Heterogeneous 3D On-chip Cache

A Timing-driven Analytical Placer for Gate-Level Partitioned Monolithic 3D ICs

Mono3D: Open Source Cell Library for Monolithic 3-D Integrated Circuits.

Design and Fabrication of a Test Chip for 3D Integration Process Evaluation

3D Finite Element Simulation Study of Chip Stacking Structure Considering Different Numbers of Stacked Dies and the Effects of Underfill and Intermetallic Compound Layer of Micro joints

Robust Monolithic 3D Carbon-Based Computing-in-SRAM with Variation-Aware Bit-Wise Data-Mapping for High-Performance and Integration Density