Abstract:A Ka-band 4TX/4RX dual-stream joint radar-communication phased-array transceiver is presented for the emerging radar-communication integrated wireless system. Different from the existing joint radar-communication transceiver with separated downconversion path and analog baseband, the proposed joint radar-communication transceiver features completely reused hardware components. In addition, various circuit design challenges in the joint radar-communication transceiver are addressed. In order to enhance the signal-to-noise and distortion ratio (SNDR) in low input power region for the communication mode and effectively reduce the chip area, a current-flopping bidirectional active mixer is proposed. A variable-transmission-line-based phase shifter (TL-PS) with tiling structure is introduced to achieve wideband phase shifting with flat group delay and in-band loss fluctuation. A pseudo-stacked power amplifier (PA) is introduced to provide both high linearity and high saturated output power for the joint radar-communication transceiver. A 4TX/4RX dual-stream joint transceiver is designed and fabricated in a standard 65-nm complementary metal–oxide–semiconductor (CMOS) process with the chip area of 16.2 mm $^{2}$ . The measured results show that the TRX covers 28.7–36.2 GHz with the peak gain of 22.2/34.7 dB for TX/RX. The measured TX peak saturated output power is 19.9 dBm and the OP $_{\mathrm{1~dB}}$ is 17.4 dBm. The measured RX minimum noise figure (NF) is 4.8 dB and the IP $_{\mathrm{1~dB}}$ is $>-$ 31.5 dBm. In addition, the analog baseband offers a 3.5-GHz bandwidth for the wideband radar signal. System measurement indicates that the proposed transceiver supports real-time centimeter-level 2-D imaging and 400-Msym/s 64-quadrature amplitude modulation (QAM) over-the-air (OTA) wireless link.

400-Mhz/2.4-ghz Combo WPAN Transceiver IC for Simultaneous Dual-Band Communication with One Single Antenna.

A 11 Mw 2.4 GHz 0.18 Μm CMOS Transceivers for Wireless Sensor Networks

A compact dual-band direct-conversion CMOS transceiver for 802.11a/b/g WLAN

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 Nm CMOS.

Integrated D-Band Transmitter and Receiver for Wireless Data Communication in 65 Nm Cmos

A fully-integrated reconfigurable dual-band transceiver for short range wireless communication in 180nm CMOS

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

Two 180nm CMOS Wireless Transceivers for IoT Applications

A 180nm CMOS wireless transceiver by utilizing guard band for narrowband IoT applications

A Fully Integrated QPSK/16-QAM D-Band CMOS Transceiver With Mixed-Signal Baseband Circuitry Realizing Digital Interfaces

A Bidirectional 56-72 GHz to 10.56 GHz Tranceiver Front-End with Integrated T/R Switches in 28-nm CMOS Technology

A Ka-Band 4TX/4RX Dual-Stream Joint Radar-Communication Phased-Array CMOS Transceiver

A Fully Integrated Bit-to-Bit 24/48Gb/s QPSK/16-QAM D-Band Transceiver with Mixed-Signal Baseband in 28nm CMOS Technology.

A Fully Integrated Bit-to-Bit 24/48gb/s QPSK/16-QAM D-Band Transceiver with Mixed-Signal Baseband in 28nm CMOS Technology

A 24-28 GHz Power and Area Efficient 4-Element Phased-Array Transceiver Front-End with 21.1%/16.6%transmitter Peak/OP1dB PAE Supporting 2.4 Gb/s in 256-QAM for 5-G Communications

A Fully Integrated 60 Ghz 10 Gb/S Qpsk Transceiver With Digital Transmitter And T/R Switch In 65nm Cmos

A 24 to 30-GHz Phased Array Transceiver Front End With 2.8 to 3.1-dB RX NF and 22 to 24% TX Peak Efficiency

A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NFin 65-nm CMOS

A Monolithic Dual-Band 77/94 GHz Transceiver Front-End with Shared Frequency Multiplier

A Baseband Transceiver for Multi-Mode and Multi-Band SoC.

A Highly Reconfigurable 65nm Cmos Rf-To-Bits Transceiver For Full-Band Multicarrier Tdd/Fdd 2g/3g/4g/5g Macro Basestations