Abstract:We present a 24–30-GHz 256-element dual-polarization transceiver (TRX) phased array based on a 16-element beamformer integrated circuit (BF-IC), 2-element frequency conversion integrated circuit (FC-IC), liquid crystal polymer (LCP)-based combiners and filters, and a tileable package with 64 embedded dual-polarized (dual-pol) antennas. The phased array presented in this work overcomes three key challenges in current 5G millimeter-wave (mmWave) antenna arrays: 1) it supports a dramatic increase in the number of supported fast-access beams; 2) it offers improved power efficiency; and 3) it provides a path to lower solution cost. 1) We enable fast switching among 30 000 beams—orders of magnitude improvement over prior work—by employing an on-chip beam calculator in the BF-IC, achieving 200-ns beam setup and 8-ns over-the-air (OTA)-switching time. 2) We enable a module-level transmitter (TX) mode peak power added efficiency (PAE) of 20% using a modular architecture that preserves power amplifier (PA) linearity and efficiency as well as receiver (RX) mode low noise amplifier (LNA) noise figure (NF). The module achieves Psat effective isotropically radiated power (EIRP) of 68.5 dBm and BF-IC NF 3.9 dB. 3) We lower the solution cost by enabling a wider steering range to reduce the number of phased arrays required in a sectorized coverage scheme, by reducing the IC and package area, and by avoiding calibration. The wider steering range is enabled by using an in-package magnetoelectric dipole antenna (for the first time in silicon-based phased arrays), resulting in steering over 70 in H-and V-pol in both E-and H-planes without requiring any calibration. Moreover, the module achieves 20-dB cross-polarization isolation across the entire 70 beam steering range.

A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NFin 65-nm CMOS

A 24–29.5-GHz Highly Linear Phased-Array Transceiver Front-End in 65-nm CMOS Supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G New Radio

A 24 to 30-GHz Phased Array Transceiver Front End With 2.8 to 3.1-dB RX NF and 22 to 24% TX Peak Efficiency

A 24-28 GHz Power and Area Efficient 4-Element Phased-Array Transceiver Front-End with 21.1%/16.6%transmitter Peak/OP1dB PAE Supporting 2.4 Gb/s in 256-QAM for 5-G Communications

A 24–28-GHz Four-Element Phased-Array Transceiver Front End With 21.1%/16.6% Transmitter Peak/OP1dB PAE and Subdegree Phase Resolution Supporting 2.4 Gb/s in 256-QAM for 5-G Communications

A 24–30-GHz Four-Element Phased Array Transceiver With Low Insertion Loss Compact T/R Switch and Bidirectional Phase Shifter for 5G Communication

A 39-GHz 64-Element Phased-Array Transceiver With Built-In Phase and Amplitude Calibrations for Large-Array 5G NR in 65-nm CMOS

A Four-Element 7.5–9-Ghz Phased-Array Receiver with 1–8 Simultaneously Reconfigurable Beams in 65-Nm CMOS

A Ka-band 8-Element 4-Beam Transmitter Front End with Hybrid VGA and Symmetrical Transformer-based Doherty PA

A 24–30-GHz 256-Element Dual-Polarized 5G Phased Array Using Fast On-Chip Beam Calculators and Magnetoelectric Dipole Antennas

A 39 GHz Dual-Channel Transceiver Chipset with an Advanced LTCC Package for 5G Multi-Beam MIMO Systems

A 4-Element 7.5-9 GHz Phased Array Receiver with 8 Simultaneously Reconfigurable Beams in 65 Nm CMOS Technology

A 33.5-37.5 GHz 4-Element Phased-Array Transceiver Front-End with High-Accuracy Low-Variation 6-bit Resolution 360° Phase Shift and 0~31.5 dB Gain Control in 65 nm CMOS

A 0.7-8 GHz High IF Frequency-Extended Transmitter Front-End with −47.1-Db EVM at 16 QAM in 65-Nm CMOS

Area-Efficient 28-GHz Four-Element Phased-Array Transceiver Front-End Achieving 25.2% Tx Efficiency at 15.68-dBm Output Power

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

A 24–40-Ghz Broadband Beamforming TRX Front-End IC with Unified Phase and Gain Control for Multiband Phased Array Systems

A Bidirectional 56-72 GHz to 10.56 GHz Tranceiver Front-End with Integrated T/R Switches in 28-nm CMOS Technology