Abstract:Si CMOS scaling is reaching its physical limit at the 15 nm technology node and beyond. III-V compound semiconductor is one of the leading candidates to replace main-stream Si as n-channel material due its much higher electron mobility. Lacking a suitable gate insulator, practical III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) remain all but a dream for more than four decades. The physics and chemistry of III-V compound semiconductor surfaces or interfaces are problems so complex that even after enormous research efforts understanding is still limited. Most of the research is focused on surface pretreatments, oxide formation and dielectric materials. Less attention is given to the III-V substrate itself. In this chapter, the history and present status of III-V MOSFET research is briefly reviewed. An empirical model for high-kill I-V interfaces is proposed based on the experimental works we performed on III-V MOSFETs using ex-situ atomic-layer-deposited high-k dielectrics and also reported works in the literature using in-situ molecular beam expitaxy grown Ga2O3(Gd2O3) as gate dielectric. The results show that physics related to III-V substrates is as important as surface chemistry and gate oxide properties for realizing high-performance III-V MOSFETs. The central concept of this empirical model is that the band alignment between trap neutral level (E-0) and conduction band minimum (CBM) or valence band maximum (VBM) and the magnitude of interface trap density governs the device performance of inversion-mode III-V MOSFETs.

A Hybrid Model of Iii-V Fets with Accurate High-Order Derivatives

A Novel Model for Phemts with Accurate High-Order Derivatives

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Accurate Modeling Of Phemt Output Current Derivatives Over A Wide Temperature Range

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

A New Compact Z$^{\text{2}}$-FET Model Based on Artificial Neural Network and Its Applications

Electrothermal Large-Signal Model of III–V FETs Including Frequency Dispersion and Charge Conservation

Artificial Neural Network Models for Metal-Ferroelectric-insulator-semiconductor Ferroelectric Tunnel Junction Memristor

Analytical modeling of III-V heterojunction source-all-around vertical tunnel FET and its inverter circuit application

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

A New Compact MOSFET Model Based on Artificial Neural Network with Unique Data Preprocessing and Sampling Techniques.

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

Artificial Neural Network Based CNTFETs Modeling

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network

An Improved Nonlinear I‐V Model for GaN HEMTs

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Electrothermal large-signal model of III–V FETs accounting for frequency dispersion and charge conservation

Advanced MOSFET Model Based on Artificial Neural Network

Machine Learning-Based Device Modeling and Performance Optimization for FinFETs

A Neural Network Model for N-Type Metal-Ferroelectric-Insulator-Semiconductor Ferroelectric Tunnel Junction

Atomic-Layer Deposited High-K/Iii-V Metal-Oxide-Semiconductor Devices And Correlated Empirical Model