Abstract:This study presents a Verilog‐A‐based ANN modeling procedure applied to GaN HEMT. The proposed approach provides an efficient solution for implementing ANN models in CAD software, especially for complex model topologies. Using S‐parameters and pulsed IV measurements, it accurately models nonlinear behaviors. Validation shows precise fitting and a fivefold simulation speed improvement compared to traditional methods, demonstrating the significant effectiveness of the Verilog‐A model for GaN HEMT modeling. This study presents a novel approach to implementing an artificial neural network (ANN) model for simulating high electron mobility transistors (HEMTs) in Keysight ADS through integrating Verilog‐A coding. It streamlines the realization of ANN models characterized by diverse complexities and layer structures. The proposed method is demonstrated by developing nonlinear models for GaN HEMT on two distinct substrates. GaN‐on‐Si and GaN‐on‐SiC with respective 10×200μm and 8×125μm gate widths are characterized by S‐parameters at a grid of gate and drain bias conditions. The intrinsic gate capacitance and conductances are extracted from the de‐embedded S‐parameters, which are then integrated to find the gate charges and currents. The drain current with the inherent self‐heating and trapping effects is modeled based on the pulsed IV measurement at well‐defined quiescent voltages. Subsequently, the related ANN models of these nonlinear elements are interconnected to form the intrinsic part of the large‐signal model. This intrinsic part with all ANN sub‐models is then completely implemented using a Verilog‐A‐based code. The whole ANN large‐signal model is then validated by single‐ and two‐tone radio frequency large‐signal measurements, which shows a perfect fitting with a high convergence rate. The overall simulation time is five times reduced when the developed Verilog‐A‐based ANN is used instead of the table‐based model. Overall, the large‐signal Verilog‐A‐based ANN model exhibits an improved performance enhancement compared to the conventional table‐based models. This indicates the practical viability of the Verilog‐A integration technique in modeling the nonlinear GaN HEMTs.

A Novel Model for Phemts with Accurate High-Order Derivatives

Accurate Modeling Of Phemt Output Current Derivatives Over A Wide Temperature Range

A Hybrid Model of Iii-V Fets with Accurate High-Order Derivatives

A Computationally-Efficient Analytical Model for SPM Machines Considering PM Shaping and Property Distribution

Subdomain Model for Predicting Armature Reaction Field of Surface-Mounted Permanent-Magnet Machines Accounting for Tooth-Tips

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Artificial Neural Network Models for Metal-Ferroelectric-insulator-semiconductor Ferroelectric Tunnel Junction Memristor

A Novel Analytical Model for Current Harmonics Prediction of Interior PM Machines Based on Differential Evolution Algorithm

A Novel Estimation Model for Hysteresis Loss Based on Semi-Minor Loops

Analytical Model of Electromagnetic Performance for Permanent-Magnet Vernier Machines Using Nonlinear Exact Conformal Model

Simulation of Three-Dimensional Dendritic Growth Using H-adaptive Finite Element Method

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A distributed small signal equivalent circuit modeling method for InP HEMT

An 1-4;nhanced AlGaN/GaN HEMTs Large-Signal Model with Parameter Fxtraction Methodology

A New Empirical I-V Model for AlGaN/GaN HEMT Devices

A Novel Physics-Based Approach to Analyze and Model E -Mode p-GaN Power HEMTs

Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach

A New Analytic Approximation to General Diode Equation

An Improved Nonlinear I‐V Model for GaN HEMTs

Improved Verilog‐A Based Artificial Neural Network Modeling Applied to GaN HEMTs

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model