Abstract:Silicon-organic solar cells based on conjugated polymers such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on n type silicon (n-Si) attract wide interest because of their potential for cost-effectiveness and high-efficiency. However, a lower barrier height Phi(b) and a shallow built in potential (V-bi) of Schottky junction between n-Si and PEDOT:PSS hinders the power conversion efficiency (PCE) in comparison with those of traditional p-n junction. Here, a strong inversion layer was formed on n Si surface by inserting a layer of 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HAT-CN), resulting in a quasi p-n junction. External quantum efficiency spectra, capacitance-voltage, transient photovoltage decay and minority charge carriers life mapping measurements indicated that a quasi p-n junction was built due to the strong inversion effect, resulting in a high Phi(b) and V-bi. The quasi p-n junction located on the front surface region of silicon substrates improved the short wavelength light conversion into photocurrent. In addition, a derivative perylene diimide (PDIN) layer between rear side of silicon and aluminum cathodes was used to block the holes from flowing to cathodes. As a result, the device with PDIN layer also improved photoresponse at longer wavelength. A champion PCE of 14.14% was achieved for the nanostructured silicon-organic device by combining HAT-CN and PDIN layers. The low temperature and simple device structure with quasi p-n junction promises cost-effective high performance photovoltaic techniques.

Electrochemical Formation of a P-N Junction on Thin Film Silicon Deposited in Molten Salt

Production Of Low-Cost Silicon Films Via Molten Salt Electrodeposition

Toward Cost‐Effective Manufacturing of Silicon Solar Cells: Electrodeposition of High‐Quality Si Films in a CaCl2‐based Molten Salt

In Situ Atomic-Scale Imaging of Electrochemical Lithiation in Silicon.

Electrodeposition of Crystalline Silicon Films from Silicon Dioxide for Low-Cost Photovoltaic Applications

Electrochemical fabrication of a P-type silicon?polythiophene p?n junction diode

Low-Cost Fabrication of Silicon Nanowires by Molten Salt Electrolysis and Their Electrochemical Performances as Lithium-Ion Battery Anodes

Silicon Electrochemistry in Molten Salts.

Heterojunction Photovoltaic Devices Utilizing Single Wall Carbon Nanotube Thin Films and Silicon Substrates

On the Electrochemical Growth of a Crystalline p‐n Junction From Aqueous Solutions

Lateral Electronic Junction of a Single Ultrathin Silicon Induced by Interfacial Dipole of Self-Assembled Monolayer

Crystalline Silicon Heterojunction Solar Cell with 81.6% Fill Factor, Deposited by Physical Vapour Deposition Methods Only

Silicon prepared by electro-reduction in molten salts as new energy materials

Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission

Electrochemical fabrication of p-poly(3-methylthiophene)/n-silicon solar cells

Highly Efficient Synthesis of Silicon Nanowires from Molten Salt Electrolysis Cell with a Ceramic Diaphragm

High Performance Nanostructured Silicon-Organic Quasi P-N Junction Solar Cells Via Low-Temperature Deposited Hole and Electron Selective Layer.

Facile electrosynthesis of silicon carbide nanowires from silica/carbon precursors in molten salt

Photoelectrochemical Deposition of Silicon–Carbon Layer on P-Type Semiconductors and Aluminum–Copper Alloy in Ionic Liquid

Metal induced crystallization of silicon film via direct forming of discontinuous copper film

A molten-salt route for synthesis of Si and Ge nanoparticles: chemical reduction of oxides by electrons solvated in salt melt