Metal induced crystallization of silicon film via direct forming of discontinuous copper film

WANG Jian,LI De-jie,WAN Yuan,LUO Yi,ZHA Liang-zhen

DOI: https://doi.org/10.13385/j.cnki.vacuum.2010.04.032

IF: 4

2010-01-01

Vacuum

Abstract:To develop the polysilicon thin-film PV cells at low cost,the discontinuous Cu film was formed directly on the common soda-lime glass as substrate by the magnetron sputtering process in which the film surfaces with different polarities were selected with substrate temperature changed.The Cu film thus obtained was taken as the metal to implement the solid metal induced crystallization of amorphous silicon thin films prepared by magnetron sputtering in vacuum at high temperature.As the test results from XRD and Raman displacement spectroscopy,the grain size of the silicon thin films formed due to metal induced crystallization is 56nm with a crystallization rate 84%.