Photo‐Assisted Ferroelectric Domain Control for α‐In2Se3 Artificial Synapses Inspired by Spontaneous Internal Electric Fields (Small 22/2024)

Seok‐Ju Kang,Wonzee Jung,Oh Hun Gwon,Han Seul Kim,Hye Ryung Byun,Jong Yun Kim,Seo Gyun Jang,BeomKyu Shin,Ojun Kwon,Byungjin Cho,Kanghoon Yim,Young‐Jun Yu
DOI: https://doi.org/10.1002/smll.202470174
IF: 13.3
2024-05-31
Small
Abstract:Photo‐Stimulated Ferroelectric Memories In article number 2307346, Kanghoon Yim, Young‐Jun Yu, and co‐workers demonstrate white‐light illuminated α‐In2Se3 ferroelectric field effect transistors for efficient synaptic memory operation. By spontaneous Fermi level regulation of α‐In2Se3 with photogenerated electron‐hole pairs, the strengthened built‐in electric field within an α‐In2Se3 channel allows the superior recognition accuracy of artificial neural networks. This advancement could be invaluable in the forthcoming era of artificial neuromorphic computing.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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