Coupling Strength, Coupling-Induced Asymmetry and Shifts in the Absorption Spectrum in Semiconductor Quantum Dots

Qin Wang,Zhiguo Lü,Hang Zheng
DOI: https://doi.org/10.1140/epjb/e2016-60795-1
2016-01-01
The European Physical Journal B
Abstract:The coupling effects on the optical absorption spectrum of semiconductor quantum dots arestudied by using the standard model with valence and conduction band levels coupled todispersive quantum phonons of infinite modes. By deducing the analytical expression of theoptical absorption coefficient, the relationship between the measurable quantities and theintrinsic properties of the semiconductor quantum dot is established. By this expression,the peak position, the line shape, the linewidth, and the energy shift of the absorptionspectrum of semiconductor quantum dot can be calculated precisely for a wide range ofparameters. The role of coupling strength as a mechanism of absorption line asymmetry isinvestigated, and the calculation results clearly show the coupling-induced asymmetry inthe absorption line. This analytical approach is applied to GaAs quantum dot, and theresults are consistent with those of experiment observations.
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